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Infineon Technologies CY62167G30-55BVXET
- Part No.:
- CY62167G30-55BVXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167G30-55BVXET.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,020
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Product details
Overview
CY62167G30-55BVXET from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 55 ns access time over –40 °C to +125 °C, with 2.2–3.6 V supply and ultra-low 5.5 µA typical standby current. It supports dual chip-enable (CE1/CE2) and byte-level control via BHE/BLE for selective upper/lower byte writes and reads in safety-critical ADAS and powertrain control units.
For engineers reviewing the CY62167G30-55BVXET datasheet, CY62167G30-55BVXET pinout, CY62167G30-55BVXET application, or CY62167G30-55BVXET equivalent, key selection criteria include ECC-enabled data integrity, automotive temperature grade (E), VFBGA-48 package compatibility, and Byte Power Down functionality enabling dynamic power gating independent of chip-enable state.
Technical Context
The CY62167G30-55BVXET implements a dedicated on-die ECC encoder/decoder block that detects and corrects single-bit errors in real time during read operations without external logic or software intervention. Its dual chip-enable architecture requires CE1 = LOW and CE2 = HIGH for device selection, decoupling address decoding from enable timing.
It features TTL-compatible I/Os, 1.0-V data retention capability, and a unique Byte Power Down mode triggered when both BHE and BLE are deasserted-automatically transitioning to standby regardless of CE1/CE2 state, reducing leakage to ≤75 µA max at +125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1M words × 16 bits); supports 2M × 8 configuration in TSOP I package via BYTE pin tie. |
| Access Time | 55 ns (Automotive-E grade); guarantees timing margin for real-time control loops at +125 °C. |
| ECC Function | Embedded single-bit error correction per 16-bit word; no external syndrome calculation required. |
| Supply Voltage | 2.2 V to 3.6 V; compatible with modern automotive 3.3-V and 2.5-V domains without level-shifting. |
| Standby Current | 5.5 µA typical / 75 µA max at +125 °C; enables low-power sleep modes in always-on ECUs. |
| Operating Temp | –40 °C to +125 °C (Automotive-E grade); qualified per AEC-Q100 Rev G stress test requirements. |
| Data Retention | 1.0 V minimum VCC; retains valid data during brown-out conditions down to 1 V supply. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 used only in 1M×16 mode. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select access. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted simultaneously for device selection. |
| WE | Write Enable | Active-Low signal initiating write cycle; write completes on WE deassertion or CE/BHE/BLE transition. |
| OE | Output Enable | Active-Low control for read data output; disables outputs to high-impedance when deasserted. |
| BHE, BLE | Byte High/Low Enable | Enable upper (BHE) or lower (BLE) byte during read/write; both disabled triggers Byte Power Down. |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; separate VSS pins provide noise isolation for I/O and core logic domains. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-accelerated single-bit error correction per 16-bit word eliminates need for external error-handling firmware. |
| Byte Power Down | Automatic entry into ultra-low-power standby when BHE and BLE are both inactive-enabling fine-grained power gating. |
| Dual Chip-Enable Logic | CE1 (active-Low) and CE2 (active-High) reduce address decode complexity and improve timing predictability in multi-SRAM systems. |
| 1.0-V Data Retention | Maintains stored data integrity during deep-sleep or battery brown-out events without refresh or backup power. |
| AEC-Q100 Qualified | Validated for Automotive-E temperature range (–40 °C to +125 °C) with full reliability stress testing per Rev G. |
Applications
| Advanced Driver Assistance Systems (ADAS) | Engine Control Units (ECU) |
|---|---|
|
Use Scenario: Real-time image buffering and feature extraction in surround-view camera processing modules. IC Role / Device Role / Timing Role: High-speed, ECC-protected frame buffer storing raw sensor data prior to CNN inference. Use Value: Prevents single-event upsets from corrupting critical vision data during radiation-prone vehicle operation. |
Use Scenario: Storing calibrated lookup tables (LUTs) and runtime variables in gasoline direct injection controllers. IC Role / Device Role / Timing Role: Non-refreshing SRAM holding safety-critical fuel mapping parameters accessed at 55 ns latency. Use Value: Ensures deterministic timing and data integrity under thermal cycling and EMI exposure in engine bays. |
| Electric Vehicle Battery Management | Automotive Infotainment Head Units |
|
Use Scenario: Logging cell voltage/temperature history and fault event timestamps in ISO 26262 ASIL-B BMS nodes. IC Role / Device Role / Timing Role: ECC-secured scratchpad memory for transient telemetry with 1.0-V retention during power loss. Use Value: Guarantees forensic data persistence through 12-V rail collapse without capacitor hold-up circuitry. |
Use Scenario: Caching navigation map tiles and voice recognition grammar models in head unit SoC co-processors. IC Role / Device Role / Timing Role: Low-latency, low-power SRAM interfacing directly to ARM Cortex-A application processors. Use Value: Reduces DDR bandwidth pressure and extends system sleep duration via Byte Power Down during UI idle periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; 10 ns faster (10 ns access), but higher 25 mA ICC and no AEC-Q100 qualification. | Suitable for non-safety-critical infotainment subsystems where speed outweighs fault tolerance. | Select only if ECC is not required and ambient temperature stays ≤+85 °C. |
| AS6C1008-55TIN | 1M × 8 organization; no BHE/BLE byte control; 55 ns access, but only rated to +85 °C (Industrial grade). | Limited to legacy 8-bit bus architectures; lacks automotive temperature and ECC support. | Use only for cost-sensitive industrial upgrades where AEC-Q100 and ECC are not mandated. |
Compared with IS61WV102416BLL-10MLI and AS6C1008-55TIN, the CY62167G30-55BVXET uniquely delivers AEC-Q100 Automotive-E qualification, hardware ECC, and Byte Power Down-all in a VFBGA-48 package-making it the sole choice for ASIL-B/C memory subsystems requiring zero-error data integrity at +125 °C.
Availability
CY62167G30-55BVXET is available at Aetrix Electronics and suitable for advanced driver assistance systems (ADAS), electric vehicle battery management systems (BMS), and engine control units (ECU) requiring stable component supply across extended automotive temperature ranges and long production lifecycles.
Supply support for CY62167G30-55BVXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications, with global manufacturing and quality certification aligned to IATF 16949.
The CY62167G series targets functional-safety-critical automotive electronics, delivering ECC-enhanced SRAMs optimized for ASIL-B compliance, thermal robustness, and seamless integration into safety-aware memory subsystems.
FAQ
Does CY62167G30-55BVXET support automatic error correction during read operations?
Yes. The device performs real-time single-bit error correction on every read access using its integrated ECC encoder/decoder. Corrected data appears on I/O lines without CPU intervention or additional latency beyond the specified 55 ns access time. No external syndrome generation or software correction is required.
Can CY62167G30-55BVXET operate in 2M × 8 mode, and what pin changes are needed?
Yes, but only in the 48-pin TSOP I package-not the VFBGA variant. In TSOP I, the BYTE pin must be tied to VSS to enable 2M × 8 mode, repurposing pin 45 as A20. BHE, BLE, and I/O8–I/O14 become unused. The VFBGA-48 package (CY62167G30-55BVXET) is fixed to 1M × 16 operation only.
What is the significance of the "Byte Power Down" feature?
When both BHE and BLE are deasserted, the device enters ultra-low-power standby (≤75 µA max) regardless of CE1/CE2 state-enabling power gating at the byte granularity level. This allows partial memory shutdown during idle cycles in multi-threaded automotive MCUs without requiring full chip deselection.
Is CY62167G30-55BVXET pin-compatible with earlier CY62167G variants in VFBGA-48?
Yes. All CY62167G devices in the 48-ball VFBGA package share identical pinout, footprint, and signal assignments-including CE1/CE2 dual-enable logic, BHE/BLE byte controls, and ECC status handling. Speed grade (45 ns vs. 55 ns) and temperature grade (A vs. E) do not affect mechanical or electrical pin compatibility.
CY62167G30-55BVXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167G30-55BVXET FAQ
1.How can I place an order for CY62167G30-55BVXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167G30-55BVXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167G30-55BVXET reliable?
The price and inventory of CY62167G30-55BVXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167G30-55BVXET is usually 5 days.
3.What payment methods are accepted for CY62167G30-55BVXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167G30-55BVXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167G30-55BVXET?
CY62167G30-55BVXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167G30-55BVXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167G30-55BVXET?
For technical support, including CY62167G30-55BVXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167G30-55BVXET requirements.
6.How does Aetrix verify that CY62167G30-55BVXET is sourced from the original manufacturer or authorized distributors?
All CY62167G30-55BVXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167G30-55BVXET meets industry standards.
7.What is the process for return or replacement of CY62167G30-55BVXET?
All CY62167G30-55BVXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62167G30-55BVXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167G30-55BVXET part is unused and in its original packaging.
Return procedure for CY62167G30-55BVXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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