Infineon Technologies CY62167G30-55ZXE

Overview

CY62167G30-55ZXE from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16-bit) static RAM with embedded single-bit error-correcting code (ECC), operating at 55 ns access time, 2.2–3.6 V supply, and -40 °C to +125 °C temperature range. It delivers ultra-low standby current (5.5 µA typ), supports dual chip-enable architecture, and features byte power-down for dynamic power management in engine control units and ADAS modules.

For engineers reviewing the CY62167G30-55ZXE datasheet, CY62167G30-55ZXE pinout, CY62167G30-55ZXE application, or CY62167G30-55ZXE equivalent, key selection criteria include ECC-enabled data integrity, automotive temperature compliance, TSOP I / VFBGA package compatibility, and dual CE timing behavior under low-voltage retention (1.0 V).

Technical Context

The CY62167G30-55ZXE implements a CMOS MoBL SRAM core with dedicated ECC encode/decode logic that detects and corrects single-bit errors in real time without automatic write-back. Its dual chip-enable interface (CE1 LOW + CE2 HIGH) enables selective bank activation in multi-SRAM systems.

It supports two memory configurations: native 1M × 16-bit mode (BYTE tied to VCC) and reconfigurable 2M × 8-bit mode (BYTE tied to VSS) in the 48-pin TSOP I package. The Byte Power Down feature triggers standby when both BHE and BLE are deasserted - independent of CE state - enabling fine-grained power gating.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS61WV102416BLL-10MLI and MT28EW128ABA1HPC-0SIT, the CY62167G30-55ZXE uniquely combines automotive-grade ECC, ultra-low standby power, and true SRAM timing - making it the sole choice for safety-critical volatile memory where bit-flip resilience and deterministic latency are mandatory.

Availability

CY62167G30-55ZXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric vehicle battery management systems requiring stable component supply across extended automotive temperature ranges and long production lifecycles.

Supply support for CY62167G30-55ZXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with expertise in memory, microcontrollers, and connectivity.

The CY62167G product line targets functional-safety-critical automotive electronics, delivering radiation-tolerant SRAMs with integrated ECC to meet ISO 26262 ASIL-B requirements without external circuitry.

FAQ

Does CY62167G30-55ZXE support automatic error correction during read operations?

Yes - the device performs real-time single-bit error correction on every read access using on-die ECC logic. Detected errors are corrected before data reaches the I/O pins, and no external intervention or software handling is required. However, it does not perform automatic write-back of corrected data to memory cells, as noted in the datasheet footnote.

Can CY62167G30-55ZXE operate in 2M × 8-bit configuration?

Yes - in the 48-pin TSOP I package only, tying the BYTE pin to VSS configures the device as a 2M × 8-bit SRAM. In this mode, A20 appears on pin 45, and BHE, BLE, and I/O8–I/O14 are unused. The 48-ball VFBGA package supports 1M × 16-bit mode only.

What is the significance of the "dual chip-enable" interface?

The dual CE interface (CE1 active-low + CE2 active-high) provides stricter decode control than single CE, reducing risk of partial activation during address bus glitches. It enables hierarchical memory mapping in multi-SRAM systems and supports synchronous deselection with precise timing margins defined in tHZCE and tLZCE parameters.

How does the Byte Power Down feature reduce system power consumption?

When both BHE and BLE are deasserted, the device enters standby mode regardless of CE1/CE2 state - allowing power gating even while other memory chips remain selected. This enables per-byte subsystem power control in multi-processor architectures, cutting leakage current to 5.5 µA typical without requiring CPU coordination.