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Infineon Technologies CY62167G30-55ZXET
- Part No.:
- CY62167G30-55ZXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62167G30-55ZXET.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,409
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Product details
Overview
CY62167G30-55ZXET from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 55 ns access time over –40 °C to +125 °C, with 2.2–3.6 V supply and ultra-low 5.5 µA typical standby current. It supports dual chip-enable (CE1/CE2) and byte-level control via BHE/BLE for use in safety-critical ADAS domain controllers.
For engineers reviewing the CY62167G30-55ZXET datasheet, CY62167G30-55ZXET pinout, CY62167G30-55ZXET application, or CY62167G30-55ZXET equivalent, key selection factors include ECC-enabled data integrity, Automotive-E temperature grade, VFBGA48 package compatibility, and byte-selectable 16-bit interface timing compliance.
Technical Context
The CY62167G30-55ZXET implements a dual CE architecture requiring CE1 = LOW and CE2 = HIGH for device activation, with independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) for byte write/read control. Its ECC logic performs real-time single-bit correction without automatic write-back, preserving deterministic latency.
It features Byte Power Down: when both BHE and BLE are deasserted, the device enters standby mode regardless of CE state-enabling dynamic power gating in partial-access memory subsystems. Data retention operates down to 1.0 V at full temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1M words × 16 bits); supports 2M × 8 configuration in TSOP I package with BYTE pin tied to VSS. |
| Access Time | 55 ns (Automotive-E grade); defines maximum clock-to-data delay in read cycles at full temperature range. |
| Supply Voltage | 2.2 V to 3.6 V; enables direct interfacing with 2.5 V and 3.3 V microcontroller buses without level-shifting. |
| Standby Current | 5.5 µA typical / 75 µA max; enables >10-year battery-backed operation in always-on vehicle modules. |
| ECC Function | Embedded single-bit error correction per 16-bit word; detects and corrects bit flips without software intervention or latency penalty. |
| Operating Temp | –40 °C to +125 °C (Automotive-E); qualified per AEC-Q100 Grade 0 for engine bay and powertrain ECUs. |
| Data Retention | 1.0 V minimum VCC; maintains stored data during deep sleep or brown-out conditions without refresh. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 used only in 1M × 16 mode. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte granularity. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted simultaneously for access; enables hierarchical memory decoding. |
| WE | Write Enable | Active-Low signal initiating write cycle; timing referenced to last active control edge (CE/BHE/BLE). |
| OE | Output Enable | Active-Low signal enabling output drivers; outputs enter HI-Z when OE is HIGH or device deselected. |
| BHE, BLE | Byte High/Low Enable | Independent enables for upper/lower byte writes and reads; assertion required to drive corresponding I/O lines. |
| VCC, VSS | Power Supply | VCC (2.2–3.6 V) and two VSS pins provide low-noise decoupling paths for high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-based single-bit error correction per 16-bit word with no CPU overhead or latency penalty. |
| Byte Power Down | Automatic transition to standby when both BHE and BLE are deasserted-enabling fine-grained power gating per memory access pattern. |
| Dual Chip-Enable Logic | CE1 (active-Low) and CE2 (active-High) require simultaneous assertion, preventing spurious access during bus contention or reset sequences. |
| TTL-Compatible I/O | Input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and output drive (2.4 V VOH @ –1 mA) ensure robust interfacing with legacy 3.3 V MCUs. |
| 1.0-V Data Retention | Maintains valid data at VCC as low as 1.0 V across full temperature range-critical for fail-safe shutdown and wake-up recovery. |
Applications
| ADAS Sensor Fusion Unit | Electric Powertrain Inverter Controller |
|---|---|
|
Use Scenario: Real-time buffering of fused camera, radar, and LiDAR data streams before ECC-protected transfer to SoC. IC Role / Device Role / Timing Role: High-reliability scratchpad SRAM with deterministic 55 ns read/write timing and single-bit error correction for sensor preprocessing buffers. Use Value: Prevents silent data corruption in multi-sensor fusion pipelines where uncorrected bit errors could cause false object detection or missed obstacles. |
Use Scenario: Storing calibrated PWM lookup tables and fault-history logs in traction inverter gate driver modules. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM holding critical calibration data during 12 V rail brown-outs and thermal shutdown events. Use Value: Enables immediate resumption of motor control after power recovery without reinitialization or recalibration delays. |
| Automotive Infotainment Head Unit | Vehicle Telematics Control Unit |
|
Use Scenario: Caching navigation map tiles and voice recognition grammar models in head units with extended ambient temperature exposure. IC Role / Device Role / Timing Role: Low-power, high-temperature SRAM providing burst-access storage for UI rendering engines under sustained 85–125 °C cabin conditions. Use Value: Eliminates thermal throttling-induced UI stutter by maintaining 55 ns access performance without derating at +125 °C. |
Use Scenario: Storing encrypted OTA firmware fragments and secure boot log entries in cellular-connected telematics gateways. IC Role / Device Role / Timing Role: ECC-protected SRAM acting as secure staging buffer for signed firmware updates prior to flash programming. Use Value: Ensures cryptographic integrity of update payloads against radiation-induced bit flips during long-haul vehicle transit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; 10 ns faster (10 ns access), but requires external error handling logic and lacks AEC-Q100 qualification. | Suitable for non-safety-critical infotainment caches where speed outweighs reliability requirements. | Select only if ECC is implemented externally and AEC-Q100 is not mandated for the subsystem. |
| MT28EW128ABA1HPC-0SIT | Quad SPI NOR Flash with internal ECC; 128 Mbit density, but sequential read-only access vs. true random-access SRAM behavior. | Used for firmware storage-not for runtime data buffering-due to erase/write latency and page constraints. | Choose only for code storage; not a functional substitute for SRAM-based data buffers or scratchpad memory. |
Compared with IS61WV102416BLL-10MLI and MT28EW128ABA1HPC-0SIT, CY62167G30-55ZXET uniquely delivers AEC-Q100-certified, ECC-hardened, random-access SRAM performance at automotive temperature extremes-making it irreplaceable for safety-critical runtime memory in ADAS and powertrain systems.
Availability
CY62167G30-55ZXET is available at Aetrix Electronics and suitable for automotive ADAS sensor fusion units, electric powertrain inverter controllers, and telematics control units requiring stable component supply across extended product lifecycles.
Supply support for CY62167G30-55ZXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications, with emphasis on functional safety and long-term supply stability.
CY62167G belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for low-power, high-temperature automotive memory subsystems requiring ECC protection and AEC-Q100 compliance.
FAQ
Does CY62167G30-55ZXET support automatic error correction write-back?
No. The device performs real-time single-bit error correction on read operations but does not automatically rewrite corrected data back to the memory array. Correction occurs transparently in the data path, and the original corrupted bit remains unmodified in the cell unless explicitly rewritten by the host system.
Can CY62167G30-55ZXET operate in 2M × 8 mode in the VFBGA48 package?
No. The 2M × 8 configuration is only supported in the 48-pin TSOP I package, where pin 45 functions as A20 and BYTE is tied to VSS. The VFBGA48 package lacks the BYTE pin and fixed pinout required for this mode; it operates exclusively as 1M × 16.
What is the role of the BYTE pin in CY62167G30-55ZXET?
The CY62167G30-55ZXET in VFBGA48 has no BYTE pin. That signal exists only in the TSOP I variant, where it selects between 1M × 16 (BYTE = VCC) and 2M × 8 (BYTE = VSS) configurations. VFBGA48 devices are fixed 1M × 16 and omit this pin entirely.
How does Byte Power Down interact with chip enable signals?
When both BHE and BLE are deasserted, the device enters standby mode regardless of CE1/CE2 states-overriding normal chip select behavior. This allows power savings during partial-byte accesses without requiring precise coordination of CE timing, simplifying low-power firmware design.
CY62167G30-55ZXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62167G30-55ZXET FAQ
1.How can I place an order for CY62167G30-55ZXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167G30-55ZXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167G30-55ZXET reliable?
The price and inventory of CY62167G30-55ZXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167G30-55ZXET is usually 5 days.
3.What payment methods are accepted for CY62167G30-55ZXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167G30-55ZXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167G30-55ZXET?
CY62167G30-55ZXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167G30-55ZXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167G30-55ZXET?
For technical support, including CY62167G30-55ZXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167G30-55ZXET requirements.
6.How does Aetrix verify that CY62167G30-55ZXET is sourced from the original manufacturer or authorized distributors?
All CY62167G30-55ZXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167G30-55ZXET meets industry standards.
7.What is the process for return or replacement of CY62167G30-55ZXET?
All CY62167G30-55ZXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62167G30-55ZXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167G30-55ZXET part is unused and in its original packaging.
Return procedure for CY62167G30-55ZXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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