Infineon Technologies CY62167G-45BVXIT

Overview

CY62167G-45BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® Static RAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time over 4.5–5.5 V supply, featuring TTL-compatible I/Os, ERR pin for error indication, and ultra-low 5.5 µA typical standby current. It targets high-reliability industrial memory subsystems requiring data integrity in power-constrained environments.

For engineers reviewing the CY62167G-45BVXIT datasheet, CY62167G-45BVXIT pinout, CY62167G-45BVXIT application, or CY62167G-45BVXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC functional behavior, byte-enable-controlled memory access modes, voltage-range-specific timing, and real-world design implications of the ERR signal and Byte Power-down feature.

Technical Context

This SRAM integrates dedicated ECC encode/decode logic directly into the memory array path, enabling real-time single-bit error detection and correction during read cycles without external logic. The ERR output asserts high only when a correctable error is found and corrected - no automatic write-back occurs, preserving deterministic latency.

It supports dual chip enable (CE1/CE2) and byte enable (BHE/BLE) control for flexible 8-bit or 16-bit data bus interfacing, with seamless transition to standby mode when both BHE and BLE are deasserted - independent of CE state - delivering guaranteed 16 µA max ISB2 across industrial temperature range.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.5 mm ball pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, CY62167G-45BVXIT uniquely delivers hardware ECC + Byte Power-down in a compact VFBGA, making it the sole option for new industrial designs requiring simultaneous low power, small size, and guaranteed single-bit error resilience.

Availability

CY62167G-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, avionics data loggers, and ruggedized test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY62167G-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.

CY62167G-45BVXIT belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for industrial and medical systems demanding low power, ECC protection, and robust operation across wide temperature and voltage ranges.

FAQ

Does CY62167G-45BVXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory cell. System firmware must handle any required write-back if persistent correction is needed - this avoids unintended latency spikes and maintains deterministic timing.

Can CY62167G-45BVXIT operate in 2M × 8 mode using the 48-ball VFBGA package?

Yes. In the VFBGA package, CY62167G-45BVXIT supports 2M × 8 configuration by asserting BYTE = VSS. Address line A20 is mapped to I/O15, while BHE, BLE, and I/O8–I/O14 become no-connect and must be left floating - confirmed in Cypress Document 001-81537 Rev. *R, Page 5.

What is the function of the ERR pin during normal (error-free) operation?

The ERR pin remains in high-impedance state during all error-free read cycles. It only drives high for the duration of the read access when a correctable single-bit error is detected and corrected - no pull-up or pull-down is required, and unused ERR may be left floating per datasheet Note 6.

Is the 45 ns access time guaranteed across the full industrial temperature range?

Yes. The 45 ns access time is specified and tested over –40°C to +85°C at VCC = 4.5–5.5 V. This value appears in the "Speed (ns)" column of the Product Portfolio table (Page 2) and is validated under AC operating conditions defined in Table 9 (Switching Characteristics) of the datasheet.