Infineon Technologies CY62167GE18-55BVXIT

Overview

CY62167GE18-55BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 55 ns access time over 1.65–2.2 V or 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication - used in industrial control modules requiring data integrity under voltage fluctuation or radiation-prone environments.

For engineers reviewing the CY62167GE18-55BVXIT datasheet, CY62167GE18-55BVXIT pinout, CY62167GE18-55BVXIT application, or CY62167GE18-55BVXIT equivalent, key selection criteria include dual-voltage support, byte-selectable power-down, TTL-compatible I/Os, and deterministic ERR signaling for fault-aware memory subsystems in safety-critical embedded systems.

Technical Context

This SRAM implements a synchronous, CMOS-based memory array with dedicated ECC encode/decode logic integrated into the read/write path. It supports both single and dual chip enable configurations, and uses BHE/ BLE to gate upper/lower byte writes and reads independently - enabling efficient 8-bit or 16-bit bus interfacing without external glue logic.

The ERR pin asserts high only during a read cycle when a correctable single-bit error is detected and corrected in the accessed word; no automatic write-back occurs. Standby current drops to ≤16 µA via Byte Power-down mode when both BHE and BLE are deasserted, independent of CE state - critical for low-duty-cycle sensor logging applications.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Compared with IS61WV102416BLL-10MLI and MT45W8MW16BGX-55 IT:B, CY62167GE18-55BVXIT delivers deterministic, zero-overhead ECC correction and direct ERR feedback - essential for deterministic real-time systems where latency predictability and fault visibility are non-negotiable.

Availability

CY62167GE18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data loggers, avionics sensor interface modules, and railway signaling controllers requiring stable component supply across extended product lifecycles.

Supply support for CY62167GE18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including MoBL® SRAMs engineered for industrial, automotive, and aerospace applications.

CY62167GE18-55BVXIT belongs to the MoBL® (Mobile Bitline) SRAM family, designed specifically for ultra-low-power, ECC-protected data storage in space-constrained, mission-critical embedded systems operating across wide temperature and voltage ranges.

FAQ

Does CY62167GE18-55BVXIT support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Write-back must be implemented externally if persistent correction is required - a design choice that reduces complexity and avoids unintended write cycles during transient errors.

Can CY62167GE18-55BVXIT operate in 2M × 8 configuration in the VFBGA package?

No. The 48-ball VFBGA variant (denoted by 'B' in BVXIT) supports only the 1M × 16 configuration. The 2M × 8 mode requires A20 addressing via pin 45 (I/O15/A20), which is specific to the 48-pin TSOP I package and not implemented in the VFBGA pinout per Figures 3 and 4 of the datasheet.

What is the function of the BYTE pin, and is it present on this part?

The BYTE pin is used in the TSOP I package to configure 1M × 16 (BYTE = VCC) or 2M × 8 (BYTE = VSS) modes. It is not present on the 48-ball VFBGA package - the CY62167GE18-55BVXIT is fixed to 1M × 16 operation and has no BYTE pin; configuration is handled entirely by address decoding and BHE/ BLE control.

How does the Byte Power-down mode interact with chip enable signals?

Byte Power-down activates independently of CE state: when both BHE and BLE are deasserted (high), the device enters ≤16 µA standby regardless of whether CE is asserted or not. This allows power savings during idle periods even when the chip remains selected - a key advantage over conventional CE-only standby schemes.