My Inquiry
My Account
Infineon Technologies CY62167GE30-45BV1XIT
- Part No.:
- CY62167GE30-45BV1XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167GE30-45BV1XIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,687
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62167GE30-45BV1XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time across 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication. It targets high-reliability industrial memory subsystems requiring data integrity in power-constrained environments.
For engineers reviewing the CY62167GE30-45BV1XIT datasheet, CY62167GE30-45BV1XIT pinout, CY62167GE30-45BV1XIT application, or CY62167GE30-45BV1XIT equivalent, this page delivers verified package mapping (48-pin TSOP I), ECC behavior, byte-enable control logic, standby current (≤16 µA), and dual-voltage operation - all critical for deterministic memory integration in safety-aware embedded systems.
Technical Context
This SRAM implements a synchronous, CMOS-based architecture with dedicated ECC encode/decode circuitry integrated into the memory array path. It supports both single and dual chip enable configurations and uses BHE/ BLE to gate upper/lower byte writes and reads independently.
The ERR pin asserts high only during read cycles when a correctable single-bit error is detected and corrected in the accessed word; no automatic write-back occurs. The Byte Power-down feature enables automatic transition to ultra-low-power standby when both BHE and BLE are deasserted - independent of CE state - enabling dynamic power gating at the byte level.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (configurable as 1M × 16 or 2M × 8) |
| Access Time | 45 ns at 4.5–5.5 V - defines maximum clock frequency (≈22.2 MHz) for synchronous interface timing |
| ECC Function | Embedded single-bit error detection and correction per 16-bit word - no external logic required |
| Standby Current | Max 16 µA at 4.5–5.5 V - enables battery-backed or energy-harvested system retention |
| Supply Voltage Range | 4.5 V to 5.5 V (industrial grade) - compatible with legacy 5 V logic domains and noise margins |
| Data Retention | 1.0 V minimum VCC - allows memory state hold during brown-out or controlled low-power suspend |
| Package | 48-pin TSOP I (Type I) - surface-mount, JEDEC-standard footprint for automated assembly |
Pinout & Package
Package: 48-pin TSOP I (Type I), 12.0 mm × 20.0 mm body, 0.5 mm pitch, lead-free (Pb-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting 1M-word addressing (1M × 16 mode); A20 appears on I/O15 pin in 2M × 8 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 controlled by BHE |
| CE1 / CE2 | Dual Chip Enable Inputs | Active-low CE1 and active-high CE2 required simultaneously for device selection in dual-CE mode |
| WE | Write Enable | Active-low signal initiating write cycle; latches data on rising edge of WE when OE is inactive |
| OE | Output Enable | Active-low control for data bus drivers; places I/O pins in high-Z when deasserted |
| BHE / BLE | Byte High/Low Enable | Independent gating of upper/lower byte writes and reads; enables true 8-bit sub-word access |
| ERR | Error Indication Output | Open-drain, active-high output asserted only during read cycles upon single-bit ECC correction |
| VCC / VSS | Power / Ground | Separate VCC (pins 24, 37) and VSS (pins 23, 36) pairs minimize switching noise and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-accelerated single-bit error correction per 16-bit word - eliminates need for external ECC logic or software overhead |
| Byte Power-down | Automatic entry to ≤16 µA standby when both BHE and BLE are inactive - enables fine-grained power control without CE manipulation |
| Dual-Voltage Operation | Supports both 4.5–5.5 V and 1.65–2.2 V rails - allows reuse across legacy 5 V and modern low-voltage designs |
| ERR Pin Signaling | Dedicated open-drain output indicating real-time ECC correction events - enables system-level error logging and diagnostics |
| TTL-Compatible I/O | Input thresholds and drive strength compliant with standard TTL logic - ensures interoperability with 5 V microcontrollers and FPGAs |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor acquisition buffers and configuration registers in programmable logic controllers operating in electrically noisy factory environments. IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC-protected word-wide access and 45 ns deterministic latency for cyclic I/O scanning. Use Value: Prevents silent data corruption in mission-critical control loops; ERR pin enables early fault reporting before cascading logic errors occur. |
Use Scenario: Caching image frame metadata and calibration coefficients in portable ultrasound devices where battery life and data fidelity are jointly constrained. IC Role / Device Role / Timing Role: Low-power, ECC-secured SRAM interfacing directly to ARM Cortex-M7 DMA engine via 16-bit bus. Use Value: 5.5 µA typical standby current extends battery runtime; 1.0 V data retention allows graceful suspend/resume during probe repositioning. |
| Avionics Display Frame Buffer | Railway Signaling Event Log |
|
Use Scenario: Holding intermediate rendering buffers for cockpit multifunction displays subject to temperature cycling and EMI exposure per DO-160. IC Role / Device Role / Timing Role: Dual-ported SRAM configured as 2M × 8 for pixel line buffering, with ERR monitoring enabled per read burst. Use Value: 45 ns access meets display controller timing budgets; ECC coverage satisfies DO-254 Class C data integrity requirements. |
Use Scenario: Recording timestamped safety-critical event sequences (e.g., door closure, signal aspect change) in wayside signaling controllers. IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM used with external backup capacitor; ERR pin triggers redundant log duplication on error detection. Use Value: Eliminates need for external checksum validation; 16 µA max ISB2 ensures >72-hour log retention during AC power loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No embedded ECC; requires external syndrome generation and correction logic | Suitable only where host processor handles ECC or where error rates are statistically negligible | Select when cost sensitivity outweighs reliability requirements and system has spare MCU cycles for software ECC |
| AS6C1008-55PCN | 55 ns access time; no ERR pin; no Byte Power-down; 100 µA typical ISB | Lacks real-time error indication and ultra-low-power standby - unsuitable for battery-backed or safety-monitored use | Choose only for non-critical, fixed-voltage 5 V systems where timing margin permits 10 ns slower access |
Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, CY62167GE30-45BV1XIT uniquely integrates hardware ECC with diagnostic signaling (ERR) and sub-20 µA standby - delivering verified data integrity and power efficiency in a single monolithic package without firmware or external logic dependencies.
Availability
CY62167GE30-45BV1XIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics display frame buffers requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.
Supply support for CY62167GE30-45BV1XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and reliable memory solutions for industrial and safety-critical applications.
CY62167GE belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered specifically for low-power, high-reliability embedded systems where data integrity, fast access, and extended voltage tolerance are mandatory design constraints.
FAQ
Does CY62167GE30-45BV1XIT support automatic error correction write-back?
No. The device performs single-bit error correction during read operations but does not automatically write the corrected data back to the memory array. Correction is transparent to the read data bus, and the ERR pin signals the event, but the original corrupted bit remains unmodified in the array unless explicitly rewritten by the host system.
Can CY62167GE30-45BV1XIT operate in 2M × 8 mode using the 48-pin TSOP I package?
Yes. When the BYTE pin (pin 45) is tied to VSS, the device configures as 2M × 8. In this mode, A20 is routed to I/O15, while BHE, BLE, and I/O8–I/O14 become unused and must be left floating. Address lines A0–A19 remain functional, and I/O0–I/O7 serve as the 8-bit data bus.
What is the function of the ERR pin, and how should it be interfaced?
The ERR pin is an open-drain, active-high output that asserts only during read cycles when a correctable single-bit error is detected and corrected. It should be pulled up externally (e.g., 4.7 kΩ to VCC) and monitored asynchronously by the host controller. If unused, it must be left floating per datasheet guidance.
Is CY62167GE30-45BV1XIT pin-compatible with earlier CY62167G variants?
No. CY62167GE includes the ERR pin, which replaces NC or other functions in CY62167G pinouts. For example, in the 48-pin TSOP I package, CY62167GE places ERR on pin 43, whereas CY62167G uses that pin as NC. Direct substitution requires PCB layout revision and firmware adaptation for ERR handling.
CY62167GE30-45BV1XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167GE30-45BV1XIT FAQ
1.How can I place an order for CY62167GE30-45BV1XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167GE30-45BV1XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167GE30-45BV1XIT reliable?
The price and inventory of CY62167GE30-45BV1XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GE30-45BV1XIT is usually 5 days.
3.What payment methods are accepted for CY62167GE30-45BV1XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GE30-45BV1XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167GE30-45BV1XIT?
CY62167GE30-45BV1XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167GE30-45BV1XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167GE30-45BV1XIT?
For technical support, including CY62167GE30-45BV1XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GE30-45BV1XIT requirements.
6.How does Aetrix verify that CY62167GE30-45BV1XIT is sourced from the original manufacturer or authorized distributors?
All CY62167GE30-45BV1XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GE30-45BV1XIT meets industry standards.
7.What is the process for return or replacement of CY62167GE30-45BV1XIT?
All CY62167GE30-45BV1XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GE30-45BV1XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167GE30-45BV1XIT part is unused and in its original packaging.
Return procedure for CY62167GE30-45BV1XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62167GE30-45BV1XIT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
