Infineon Technologies CY62167GE30-45BVXI

Overview

CY62167GE30-45BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time across 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication. It targets high-reliability embedded memory applications in industrial control and data acquisition systems where data integrity and low-power standby are critical.

For engineers reviewing the CY62167GE30-45BVXI datasheet, CY62167GE30-45BVXI pinout, CY62167GE30-45BVXI application, or CY62167GE30-45BVXI equivalent, this device requires attention to its dual-voltage support (4.5–5.5 V), ERR pin behavior during read cycles, byte-enable-controlled 8-bit/16-bit access mode, and TSOP I package pin configuration including BYTE pin logic for memory width selection.

Technical Context

This SRAM integrates dedicated ECC encode/decode circuitry that detects and corrects single-bit errors on every read access, with correction performed transparently and signaled via the open-drain ERR output (active-high). The device supports both single and dual chip enable configurations, and includes Byte Power-down functionality-asserting both BHE and BLE low forces automatic entry into ultra-low-power standby regardless of CE state.

It operates across two distinct V_CC ranges: 4.5–5.5 V (45 ns speed grade) and 1.65–2.2 V (55 ns), with TTL-compatible I/Os, 1.0-V data retention, and configurable memory organization via the BYTE pin in TSOP I packages. Address range spans A0–A19 (1M × 16) or A0–A20 (2M × 8), with NC pins reserved for future density expansion.

Key Specifications

Pinout & Package

48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, 12 × 20 mm body, 0.5 mm pitch. Pin configuration supports dual chip enable (CE1/CE2) and includes dedicated ERR output. BYTE pin determines memory width: tied to V_CC for 1M × 16 mode; tied to V_SS for 2M × 8 mode (A20 appears on pin 45).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, CY62167GE30-45BVXI uniquely delivers hardware ECC + ERR signaling + dual-voltage support + Byte Power-down in a single TSOP I package - reducing BOM count, firmware burden, and power management complexity for safety-aware embedded systems.

Availability

CY62167GE30-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data loggers, and avionics health monitor caches requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.

Supply support for CY62167GE30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and reliable memory solutions for mission-critical applications.

CY62167GE belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, designed specifically for industrial and medical systems demanding ultra-low standby current, hardware-based data integrity, and flexible voltage operation without performance compromise.

FAQ

What is the function of the BYTE pin on CY62167GE30-45BVXI?

The BYTE pin configures memory organization: tied to V_CC, it enables 1M × 16 mode (A0–A19 active); tied to V_SS, it enables 2M × 8 mode (A0–A20 active, with A20 on pin 45). In 2M × 8 mode, BHE, BLE, and I/O8–I/O14 are unused and may float. This pin is static - set once at power-on and not dynamically controllable.

How does the ERR pin behave during normal and error-correction operation?

ERR is an open-drain output asserted HIGH only during a read cycle where a single-bit error is detected and corrected. It remains LOW otherwise, including during writes or error-free reads. If unused, ERR must be left floating - no external pull-up is required. Pulse width matches read access time (45 ns), synchronized to OE timing.

Can CY62167GE30-45BVXI operate in 1.8 V systems?

No - this specific variant (45BVXI) is rated for 4.5–5.5 V operation only. While the CY62167GE family includes 1.65–2.2 V versions (e.g., CY62167GE30-55ZSXI), the "45" speed grade and "BVXI" suffix denote the 4.5–5.5 V, 45 ns, TSOP I package variant. Using it below 4.5 V violates absolute maximum ratings and causes functional failure.

Is the CY62167GE30-45BVXI pin-compatible with CY62167G30-45BVXI?

No - CY62167G lacks the ERR pin. In the 48-pin TSOP I package, CY62167G uses pin 42 for NC, whereas CY62167GE assigns pin 42 to ERR. Board designs must route ERR separately; direct replacement requires PCB revision. Both share identical address/data/control pinouts and timing, but ERR functionality is exclusive to the 'E' suffix variant.