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Infineon Technologies CY62167GE30-45BVXIT

Part No.:
CY62167GE30-45BVXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62167GE30-45BVXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,248

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Product details

Overview

CY62167GE30-45BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time with 1.65–2.2 V or 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication - used in industrial control modules requiring data integrity under voltage fluctuation or radiation-prone environments.

For engineers reviewing the CY62167GE30-45BVXIT datasheet, CY62167GE30-45BVXIT pinout, CY62167GE30-45BVXIT application, or CY62167GE30-45BVXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), byte-enable-controlled dual-width memory access, ultra-low 5.5 µA typical standby current, TTL-compatible I/Os, and ERR-driven fault visibility - critical for safety-aware embedded memory selection.

Technical Context

This SRAM integrates dedicated ECC encode/decode logic within the memory array, correcting single-bit errors on read without external logic or software intervention. It supports both single CE (with ERR) and dual CE (CE1/CE2) configurations, enabling flexible chip-select architecture in multi-memory systems.

The Byte Power-down feature activates automatically when both BHE and BLE are deasserted, forcing immediate transition to standby mode regardless of CE state - delivering deterministic low-power behavior during partial-byte idle cycles. The ERR pin asserts high only during successful single-bit correction events, not detection-only cases.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (configurable as 1M × 16 or 2M × 8)
Access Time 45 ns at 4.5–5.5 V - enables direct interface with 22.22 MHz bus clocks without wait states
Standby Current 5.5 µA typical / 16 µA max - supports battery-backed operation for >1 year in low-duty-cycle systems
Voltage Range 1.65–2.2 V and 4.5–5.5 V - dual-range compatibility with modern low-voltage SoCs and legacy 5 V controllers
ECC Function On-die single-bit error correction with ERR output assertion - eliminates need for external ECC controller or firmware overhead
Data Retention 1.0 V minimum retention voltage - allows graceful power-fail holdover with capacitor-based backup
Package 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - compact footprint for space-constrained industrial PCBs

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 6 mm × 8 mm body, 0.8 mm ball pitch, bottom-side thermal pad optional.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word (16-bit) or 2M-word (8-bit) addressing; A20 available via I/O15 in 2M×8 mode
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel I/O; split into upper/lower bytes via BHE/BLE for selective write masking and reduced EMI
CE, CE1, CE2 Chip Enable Inputs Dual CE option (CE1/CE2) enables hierarchical memory decoding; single CE variant includes ERR pin
WE, OE, BHE, BLE Control Inputs Standard SRAM timing controls; BHE/BLE enable byte-granular writes and trigger automatic Byte Power-down
ERR Open-drain Error Output Asserts high only upon successful single-bit correction during read - provides hardware-observable fault signal for logging or recovery
VCC, VSS Power Supply Pins Dual VCC domains supported (1.8 V or 5 V); separate VSS pins reduce ground bounce in high-speed switching

Key Features

Feature Design Value
Embedded ECC with ERR output Hardware-accelerated single-bit error correction with dedicated status pin - removes software ECC latency and CPU load
Byte Power-down mode Automatic entry into ultra-low-power standby when both BHE and BLE are inactive - no software or external logic required
Dual voltage range support Single device operates across 1.65–2.2 V and 4.5–5.5 V rails - simplifies BOM consolidation for mixed-voltage designs
Configurable memory width Pin-strappable 1M×16 or 2M×8 organization - adapts to host bus width without redesigning PCB layout
TTL-compatible I/Os Direct interface with legacy microcontrollers and FPGAs without level-shifting - reduces component count and signal integrity risk

Applications

Industrial PLC Memory Buffer Medical Diagnostic Data Cache

Use Scenario: Storing real-time sensor fusion outputs and control command histories in programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: Primary volatile memory buffer with ECC-protected storage for mission-critical operational logs and configuration snapshots.

Use Value: Prevents silent data corruption in long-running control loops; ERR pin triggers diagnostic flag before corrupted data propagates to actuator outputs.

Use Scenario: Caching image frame metadata and calibration coefficients in portable ultrasound devices where intermittent power loss is common.

IC Role / Device Role / Timing Role: Low-voltage SRAM holding time-sensitive acquisition parameters between imaging sessions.

Use Value: 1.0 V data retention enables >10-second holdover during battery swap; 5.5 µA standby extends battery life by 37% vs. standard SRAM.

Railway Signaling Event Logger Avionics Health Monitor Buffer

Use Scenario: Recording train position, speed, and signaling state changes in EN 5012x-certified trackside equipment exposed to wide temperature swings.

IC Role / Device Role / Timing Role: Radiation-tolerant, ECC-enabled memory storing tamper-proof event timestamps and fault codes.

Use Value: Single-bit ECC corrects soft errors induced by cosmic rays; industrial-grade –40°C to +85°C operation ensures reliability across rail corridors.

Use Scenario: Holding real-time engine parameter history and fault signatures in airborne health monitoring units with strict SWaP-C constraints.

IC Role / Device Role / Timing Role: High-speed (45 ns), low-power SRAM interfacing directly with ARM Cortex-R5F-based monitoring SoC.

Use Value: 48-ball VFBGA footprint saves 42% board area vs. TSOP; dual-voltage support simplifies integration with mixed 1.8 V/5 V avionics subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV102416BLL-10MLI No integrated ECC; requires external logic or software for error handling; 10 ns faster (10 ns access), but higher 25 mA active current Suitable for cost-sensitive, non-safety-critical buffering where ECC is implemented in firmware Select when raw speed and lower unit cost outweigh ECC hardware assurance and power savings
AS6C1008-55ZIN 55 ns access time; no ERR pin or ECC; 3.3 V only; 1M × 8 organization fixed - no width configurability Fits simple 8-bit microcontroller interfaces but lacks ECC, voltage flexibility, and byte-write power optimization Choose only for legacy 3.3 V designs where ECC is unnecessary and board space permits larger SOJ package

Compared with IS61WV102416BLL-10MLI and AS6C1008-55ZIN, CY62167GE30-45BVXIT uniquely delivers hardware ECC with observable ERR signaling, dual-voltage operation, and automatic byte-triggered power-down - making it the sole choice for industrial and transportation systems requiring certified data integrity and deterministic low-power behavior.

Availability

CY62167GE30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic devices, railway signaling loggers, and avionics health monitors requiring stable component supply across extended product lifecycles.

Supply support for CY62167GE30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including MoBL® SRAMs engineered for industrial, automotive, and infrastructure applications.

CY62167GE belongs to the MoBL® (Mobile Bitline) SRAM family, designed specifically for low-power, ECC-protected memory in mission-critical embedded systems where data integrity and energy efficiency are co-primary requirements.

FAQ

Does CY62167GE30-45BVXIT support automatic error correction without external circuitry?

Yes. The device performs full on-die ECC encoding and decoding: single-bit errors are corrected transparently during read operations, and the ERR pin asserts high to indicate successful correction. No external logic, FPGA IP, or software routines are required to enable this function - it is fully autonomous and hardware-implemented.

Can CY62167GE30-45BVXIT operate in both 1M × 16 and 2M × 8 modes on the same PCB?

Yes. In the 48-ball VFBGA package, the memory width is configured via the BYTE pin (pin 45): tied to VCC for 1M × 16 mode, or to VSS for 2M × 8 mode. In the latter, A20 is routed to I/O15, while BHE, BLE, and I/O8–I/O14 become no-connect - allowing one footprint to serve two distinct host bus architectures.

What is the functional difference between CY62167G and CY62167GE variants?

The CY62167GE includes the ERR output pin for hardware notification of ECC correction events; the CY62167G omits this pin and provides no error status indication. Both share identical memory density, timing, ECC logic, and power characteristics - the ERR pin is the sole distinguishing feature affecting system-level fault visibility.

Is the 48-ball VFBGA package of CY62167GE30-45BVXIT compatible with standard reflow profiles?

Yes. The part complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard Pb-free reflow profiles, including peak temperatures up to 260°C for 30 seconds. The VFBGA's 0.8 mm pitch and coplanarity ≤0.1 mm ensure reliable solder joint formation using Type 3 solder paste and standard stencil apertures.

CY62167GE30-45BVXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
2M x 8, 1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62167GE30-45BVXIT FAQ

1.How can I place an order for CY62167GE30-45BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62167GE30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62167GE30-45BVXIT reliable?

The price and inventory of CY62167GE30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GE30-45BVXIT is usually 5 days.

3.What payment methods are accepted for CY62167GE30-45BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GE30-45BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62167GE30-45BVXIT?

CY62167GE30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62167GE30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62167GE30-45BVXIT?

For technical support, including CY62167GE30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GE30-45BVXIT requirements.

6.How does Aetrix verify that CY62167GE30-45BVXIT is sourced from the original manufacturer or authorized distributors?

All CY62167GE30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GE30-45BVXIT meets industry standards.

7.What is the process for return or replacement of CY62167GE30-45BVXIT?

All CY62167GE30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GE30-45BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62167GE30-45BVXIT part is unused and in its original packaging.

Return procedure for CY62167GE30-45BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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