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Infineon Technologies CY62167GE30-45ZXIT
- Part No.:
- CY62167GE30-45ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62167GE30-45ZXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,211
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Product details
Overview
CY62167GE30-45ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time, 1.65–2.2 V or 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication. It targets high-reliability embedded memory in industrial controllers and data-acquisition systems requiring fault-tolerant storage.
For engineers reviewing the CY62167GE30-45ZXIT datasheet, CY62167GE30-45ZXIT pinout, CY62167GE30-45ZXIT application, or CY62167GE30-45ZXIT equivalent, this page delivers verified package mapping (48-pin TSOP I), ECC functional behavior, byte-enable control logic, standby current specs (≤16 µA), and dual-voltage operation - all confirmed from Infineon's official Rev. *R datasheet (001-81537).
Technical Context
This SRAM integrates dedicated ECC encode/decode circuitry that detects and corrects single-bit errors on every read cycle without software intervention. Its Byte Power-down feature enables automatic transition to ultra-low-power standby when both BHE and BLE are deasserted - independent of chip enable state.
The device supports dual chip enable (CE1/CE2) or single CE configurations, with ERR pin assertion (high) signaling successful correction. Addressing accommodates A0–A19 (1M×16 mode) or A0–A20 (2M×8 mode via BYTE pin configuration), and I/O pins are TTL-compatible with guaranteed VOH/VOL across both voltage ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (configurable as 1M × 16 or 2M × 8) |
| Access Time | 45 ns at 4.5–5.5 V; enables real-time data buffering in 22.22 MHz bus systems |
| Standby Current | Max 16 µA at 4.5–5.5 V; supports battery-backed retention in low-power modes |
| ECC Function | Hardware-based single-bit error detection and correction per read; ERR pin asserts high |
| Supply Voltage | 1.65–2.2 V or 4.5–5.5 V; allows direct interfacing with 1.8 V logic or legacy 5 V systems |
| Data Retention | 1.0 V minimum; maintains stored data during brown-out or partial power loss |
| Package | 48-pin TSOP I (RoHS-compliant); supports space-constrained PCB layouts with standard reflow |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, lead-free, body size 12.0 mm × 20.0 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 1M × 16 addressing; A20 enabled only in 2M × 8 mode via BYTE pin tie |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Dual Chip Enable Inputs | Device selected only when CE1 = LOW and CE2 = HIGH; supports multi-SRAM decoding |
| WE | Write Enable | LOW initiates write; timing referenced to address and data setup/hold windows |
| OE | Output Enable | Controls data bus tristate; must be active for valid read outputs |
| BHE, BLE | Byte Enable Controls | Select upper/lower byte for writes or reads; enable Byte Power-down when both inactive |
| ERR | Error Indication Output | Open-drain HIGH pulse indicates single-bit error detected and corrected during read |
| BYTE | Configuration Input | Tie to VCC for 1M × 16 mode; tie to VSS for 2M × 8 mode (enables A20 on I/O15) |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | On-die encode/decode circuitry corrects single-bit errors transparently per read cycle - no firmware overhead |
| Ultra-Low Standby Current | 16 µA max at 5 V enables >1-year battery backup in critical memory retention applications |
| Wide Dual-Voltage Operation | Supports 1.8 V microcontrollers and 5 V legacy peripherals without level shifters |
| Byte Power-Down Mode | Automatic entry into standby when BHE and BLE are both inactive - eliminates external power management |
| TTL-Compatible I/O | Guaranteed VOH ≥ 2.4 V and VOL ≤ 0.4 V at 5 V simplifies interface with standard logic families |
Applications
| Industrial PLC Memory Buffer | Medical Data Logger |
|---|---|
|
Use Scenario: Storing sensor acquisition buffers and configuration registers in programmable logic controllers operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Primary volatile memory buffer with ECC protection against cosmic-ray-induced bit flips in long-duration runtime. Use Value: Prevents silent data corruption in control logic; 45 ns access ensures deterministic response within 20 µs scan cycles. |
Use Scenario: Capturing ECG waveform snapshots in portable diagnostic devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power SRAM holding raw analog-to-digital samples prior to wireless transmission. Use Value: 5.5 µA typical standby current extends battery life beyond 12 months; 1.0 V data retention sustains memory during sleep states. |
| Avionics Sensor Interface Module | Test Equipment Pattern Memory |
|
Use Scenario: Interfacing with inertial measurement units (IMUs) in UAV flight controllers where radiation tolerance is required. IC Role / Device Role / Timing Role: Fault-tolerant memory staging raw IMU data before CRC validation and telemetry upload. Use Value: ERR pin provides immediate hardware-level alert on single-bit errors - enabling fail-safe logging or reacquisition. |
Use Scenario: Storing test vectors in automated boundary-scan (JTAG) systems requiring deterministic read/write timing. IC Role / Device Role / Timing Role: High-speed pattern memory accessed synchronously with 22.22 MHz test clock. Use Value: 45 ns access time guarantees zero-wait-state operation at full test speed; dual-voltage support eases integration with mixed-signal test boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM-with-ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | No integrated ECC; requires external error-handling logic; 10 ns faster (10 ns access), but higher ICC (60 mA typical) | Suitable only where ECC is implemented in FPGA or MCU firmware; not drop-in for hardware-corrected use cases | Select if speed > reliability; avoid when system-level ECC hardware offload is mandatory |
| AS6C8016-55ZIN | 55 ns access time; no ERR pin; no Byte Power-down; 35 µA max ISB vs. 16 µA | Lacks real-time error notification and ultra-low-power standby - unsuitable for battery-retained or safety-critical roles | Choose only for cost-sensitive, non-critical buffering where ECC is optional and power budget permits |
Compared with IS61WV102416BLL-10MLI and AS6C8016-55ZIN, CY62167GE30-45ZXIT uniquely delivers hardware ECC correction with visible ERR signaling and sub-20 µA standby - making it the sole choice for unattended, long-life, fault-aware memory subsystems.
Availability
CY62167GE30-45ZXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical data loggers, avionics sensor modules, and automated test equipment requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.
Supply support for CY62167GE30-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial-grade performance.
CY62167GE belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-reliability embedded memory in harsh environments - particularly where data integrity and extended battery life are design-critical.
FAQ
What voltage ranges does CY62167GE30-45ZXIT support, and how does it handle level translation?
CY62167GE30-45ZXIT operates natively at two disjoint voltage ranges: 1.65–2.2 V and 4.5–5.5 V. It does not support intermediate voltages like 3.3 V. Its inputs are TTL-compatible, so 5 V operation requires no external level shifters when interfacing with standard 5 V logic. For 1.8 V systems, direct connection is valid - no translation needed - because VIH min is 1.4 V and VIL max is 0.4 V at 1.8 V supply.
How does the ERR pin behave during normal operation and error events?
The ERR pin is an open-drain output that remains HIGH-Z when inactive. During a read cycle where a single-bit error is detected and corrected, ERR asserts HIGH for the duration of that read access (tAA to tOHZ). It does not latch or require clearing. If no error occurs, ERR stays inactive (pulled up externally or left floating per datasheet guidance). It is not asserted for multi-bit errors or uncorrectable conditions.
Can CY62167GE30-45ZXIT be used in 2M × 8 configuration on a 48-pin TSOP I package?
Yes - by tying the BYTE pin to VSS (ground), the device configures as 2M × 8. In this mode, pin 45 becomes address line A20, while BHE, BLE, and I/O8–I/O14 are unused and may be left floating. The 48-pin TSOP I footprint remains identical; only the BYTE pin bias changes. This configuration is fully supported in the datasheet and requires no hardware modification beyond the BYTE tie-off.
Does CY62167GE30-45ZXIT support automatic error correction write-back?
No. As explicitly stated in Note 1 of the datasheet, this device does not support automatic write-back after error correction. The corrected data appears only on the I/O bus during the read cycle; the original erroneous word remains unmodified in the array. System-level firmware or external logic must initiate a write cycle to restore the corrected value if persistent correction is required.
CY62167GE30-45ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62167GE30-45ZXIT FAQ
1.How can I place an order for CY62167GE30-45ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167GE30-45ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167GE30-45ZXIT reliable?
The price and inventory of CY62167GE30-45ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GE30-45ZXIT is usually 5 days.
3.What payment methods are accepted for CY62167GE30-45ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GE30-45ZXIT transactions.
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4.How is shipping managed for CY62167GE30-45ZXIT?
CY62167GE30-45ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167GE30-45ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167GE30-45ZXIT?
For technical support, including CY62167GE30-45ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GE30-45ZXIT requirements.
6.How does Aetrix verify that CY62167GE30-45ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62167GE30-45ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GE30-45ZXIT meets industry standards.
7.What is the process for return or replacement of CY62167GE30-45ZXIT?
All CY62167GE30-45ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GE30-45ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167GE30-45ZXIT part is unused and in its original packaging.
Return procedure for CY62167GE30-45ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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