Infineon Technologies CY62167GE-45ZXIT

Overview

CY62167GE-45ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® low-power static RAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time, 1.65–2.2 V or 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication. It targets high-reliability industrial memory subsystems requiring data integrity in harsh environments.

For engineers reviewing the CY62167GE-45ZXIT datasheet, CY62167GE-45ZXIT pinout, CY62167GE-45ZXIT application, or CY62167GE-45ZXIT equivalent, this page delivers verified package mapping (48-pin TSOP I), ECC functional behavior, byte-enable-controlled power-down, TTL-compatible I/O, and dual-voltage operation - all confirmed from Infineon's official Rev. *R datasheet (001-81537).

Technical Context

The CY62167GE integrates dedicated ECC encode/decode logic within the SRAM array, detecting and correcting single-bit errors on every read cycle without external logic. Its ERR pin asserts high only during successful correction events - no automatic write-back occurs, preserving deterministic timing.

It supports two chip-enable configurations (single CE or dual CE1/CE2), byte-selectable writes via BHE/ BLE, and a unique Byte Power-down mode: when both BHE and BLE are deasserted, the device enters ultra-low standby (<16 µA) regardless of CE state - enabling fine-grained power control in partial-access memory systems.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (Type I, 12 mm × 20 mm), RoHS-compliant, lead-free. Pinout validated per Figure 6 (48-pin TSOP I, Dual CE + ERR) in Infineon datasheet 001-81537 Rev. *R.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and N25S80A16T, CY62167GE-45ZXIT uniquely combines hardware ECC, dual-voltage support, and sub-20 µA standby - making it the only option for industrial systems needing concurrent data integrity, wide supply flexibility, and ultra-low power in one monolithic SRAM.

Availability

CY62167GE-45ZXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging cache subsystems, and ruggedized avionics data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62167GE-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and security solutions with vertical integration from silicon to system-level IP.

CY62167GE belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, engineered specifically for high-reliability embedded systems where data integrity, low active/standby power, and wide operating voltage ranges are mandatory - not merely desirable.

FAQ

Does CY62167GE-45ZXIT support automatic error correction write-back?

No. The CY62167GE performs single-bit error detection and correction on read operations only, and does not automatically rewrite corrected data back to the memory array. The ERR pin signals correction occurrence, but the original corrupted bit remains unmodified in the cell unless explicitly rewritten by the host system. This behavior is documented in Note 1 of the datasheet (001-81537 Rev. *R, page 2).

Can CY62167GE-45ZXIT operate in 2M × 8 mode using the 48-pin TSOP I package?

Yes. When the BYTE pin (Pin 45) is tied to VSS, the device configures as 2M × 8. In this mode, A20 is routed to I/O15, while BHE, BLE, and I/O8–I/O14 become unused and may be left floating. This configuration is explicitly defined in Figures 5 and 6 and Notes 4 and 8 of the datasheet.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts HIGH during a single-bit error correction event. It must be externally pulled up to VCC with a 4.7 kΩ resistor to ensure valid logic levels. If unused, the pin should be left floating - no internal pull-up or pull-down is provided. This is specified in Note 6 (page 5) and the DC Electrical Characteristics table (page 7).

Is CY62167GE-45ZXIT compatible with 3.3 V operation?

No. The device supports only two discrete voltage ranges: 1.65–2.2 V and 4.5–5.5 V. Operation at 3.3 V is outside specification and not guaranteed - it falls between the two supported rails and risks undefined behavior, increased leakage, or failure to meet timing. This is clearly stated in the Operating Range table (page 7).