Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62167GN30-45BVXI

Part No.:
CY62167GN30-45BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62167GN30-45BVXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,160

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62167GN30-45BVXI from Cypress Semiconductor is a 16-Mbit MoBL® CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time with ultra-low standby current (1.5 µA typical), wide 2.2–3.6 V supply range, and industrial temperature support (–40 °C to +85 °C). It serves as main memory or buffer in portable battery-powered systems requiring fast, low-power volatile storage.

For engineers reviewing the CY62167GN30-45BVXI datasheet, CY62167GN30-45BVXI pinout, CY62167GN30-45BVXI application, or CY62167GN30-45BVXI equivalent, key selection criteria include configurable data width (16-bit/8-bit), automatic power-down behavior, TSOP I / VFBGA package compatibility, and byte-enable-controlled write granularity.

Technical Context

The device implements dual chip enable (CE1/CE2) and independent byte enables (BHE/BLE) to support flexible memory expansion and partial-word writes. Its automatic power-down circuit reduces current by >99% when deselected-triggered by CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH-enabling deep sleep in host systems.

It supports two distinct configurations: 1M × 16 mode (BYTE tied to VCC) and 2M × 8 mode (BYTE tied to VSS), with A20 exposed only in 2M × 8 mode on Pin 45 of TSOP I. All I/O pins enter high-impedance state during deselect, OE HIGH, write cycles, or simultaneous BHE/BLE HIGH.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1M × 16 or 2M × 8 configuration)
Access Time 45 ns - guarantees deterministic read latency for real-time embedded control loops
Standby Current 1.5 µA typical - extends battery life in always-on portable devices
Supply Voltage 2.2 V to 3.6 V - compatible with Li-ion, Li-poly, and regulated 3.3 V rails
Operating Temperature –40 °C to +85 °C - qualified for industrial-grade deployment
Data Retention Voltage ≥1.0 V - maintains stored data during brown-out or backup-battery operation
Output Drive Strength 2.1 mA at 3.6 V - sufficient for direct connection to 50 Ω trace loads without external termination

Pinout & Package

Package: 48-ball VFBGA (ball pitch 0.5 mm) and 48-pin TSOP I (Type I, 12.0 × 20.0 mm). Both packages support identical logic interface and pin mapping except for BYTE pin function and A20 availability.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word (16-bit) or 2M-word (8-bit) addressing
I/O0–I/O7 Lower Byte Data I/O Bi-directional 8-bit data path enabled only when BLE = LOW
I/O8–I/O15 Upper Byte Data I/O Bi-directional 8-bit data path enabled only when BHE = LOW
CE1, CE2 Chip Enable Inputs Active-LOW CE1 and active-HIGH CE2 provide dual-signal chip select for daisy-chained memory banks
OE Output Enable Controls output drivers only; does not affect internal power state or address latching
WE Write Enable Active-LOW signal initiating write cycle; timing-critical for setup/hold compliance
BHE, BLE Byte High/Low Enable Independent gating of upper/lower data bytes-enables 8-bit writes in 16-bit bus systems
BYTE Configuration Select Tied to VCC for 1M × 16 mode; tied to VSS for 2M × 8 mode (exposes A20 on TSOP I Pin 45)

Key Features

Feature Design Value
Ultra-low standby current 1.5 µA typical - enables multi-year battery life in IoT endpoint sensors
Configurable organization Hardware-selectable 1M × 16 or 2M × 8 via BYTE pin - eliminates need for external multiplexing logic
Automatic power-down Self-activates on CE1 HIGH / CE2 LOW / BHE+BLE HIGH - no software or external control required
CMOS-compatible interface VIH/VIL thresholds scale with VCC - ensures robust noise margin across full 2.2–3.6 V supply range
High-speed 45 ns access Meets timing requirements of ARM Cortex-M4/M7 microcontrollers running at ≥100 MHz

Applications

Portable Medical Monitors Industrial PLC Data Buffers

Use Scenario: Continuous ECG waveform acquisition and local buffering before wireless transmission.

IC Role / Device Role / Timing Role: Volatile frame buffer storing 2–4 seconds of 16-bit sampled data at 1 kHz.

Use Value: 45 ns access enables real-time overlay of digital filters; 1.5 µA standby preserves battery during idle periods between patient checks.

Use Scenario: Storing I/O scan history and diagnostic logs in modular automation controllers.

IC Role / Device Role / Timing Role: Non-critical SRAM for transient process data mirroring between FPGA and ARM host.

Use Value: Dual CE inputs allow seamless integration into multi-bank memory maps; industrial temp rating ensures reliability in cabinet-mounted enclosures.

Wireless Sensor Gateways Automotive Infotainment UI Caches

Use Scenario: Aggregating and preprocessing sensor payloads from Zigbee/Z-Wave subnets before Ethernet upload.

IC Role / Device Role / Timing Role: Intermediate packet buffer enabling burst-mode RF transmission scheduling.

Use Value: Configurable 8/16-bit width matches common MCU bus widths; low ICCDR supports retention during 3.3 V rail brown-out events.

Use Scenario: Caching navigation map tiles and UI assets in head-unit systems with limited DRAM bandwidth.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for GPU texture prefetching and menu rendering.

Use Value: 45 ns tAA meets display controller timing budgets; TSOP I package supports reflow-compatible PCB layout in space-constrained dashboards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV102416BLL-45NLI Same density and speed; 2.5–3.6 V supply only; no BYTE pin; fixed 1M × 16 organization Lacks 2M × 8 mode and automatic power-down - requires external logic for partial-word writes Choose if system uses only 16-bit bus and operates strictly above 2.5 V
Renesas R1LV1616RSA-45PB 45 ns access; 2.2–3.6 V; 1M × 16 only; standby current 3 µA typical (2× higher than CY62167) No byte-enable flexibility; no automatic power-down - relies on host-controlled CE toggling Choose if footprint compatibility with Renesas legacy designs is prioritized over lowest power

Compared with IS62WV102416BLL-45NLI and R1LV1616RSA-45PB, CY62167GN30-45BVXI uniquely delivers hardware-configurable width, automatic power-down, and lowest standby current-making it optimal for battery-sensitive, multi-bus-width applications where firmware overhead must be minimized.

Availability

CY62167GN30-45BVXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, wireless sensor gateways, and automotive infotainment UI caches requiring stable component supply across extended product lifecycles.

Supply support for CY62167GN30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with global R&D and manufacturing infrastructure.

CY62167GN30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and energy-constrained applications where nanowatt-level standby and sub-50 ns access must coexist.

FAQ

What is the function of the BYTE pin on CY62167GN30-45BVXI?

The BYTE pin selects memory organization: tie to VCC for 1M × 16 mode (standard 16-bit bus), or tie to VSS for 2M × 8 mode (exposing A20 on TSOP I Pin 45). In 2M × 8 mode, BHE, BLE, and I/O8–I/O14 are unused. This hardware-selectable configuration eliminates external logic and simplifies board design across multiple platform variants.

How does automatic power-down work without software intervention?

Automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH-placing the device in ultra-low-current standby (≤8 µA). No clock, command, or register write is needed. The internal circuit monitors these control signals continuously and transitions autonomously, reducing power by >99% versus active mode without host CPU involvement.

Can CY62167GN30-45BVXI operate reliably at 2.2 V?

Yes-CY62167GN30-45BVXI is fully specified from 2.2 V to 3.6 V. At 2.2 V, tRC remains 45 ns, ISB2 is ≤3 µA at 25 °C, and VIH/VIL thresholds scale proportionally (VIH = 1.8 V min, VIL = 0.6 V max). All AC and DC parameters are guaranteed across this range per the datasheet's Operating Range table.

Is the 48-ball VFBGA package pin-to-pin compatible with the 48-pin TSOP I package?

No-while both packages share identical signal names and logical functions, their physical pinouts differ significantly. The VFBGA uses a grid array (e.g., A1 = VCC, H6 = NC), whereas TSOP I uses linear numbering (Pin 1 = A15, Pin 48 = CE1). Board redesign is required when switching packages; however, firmware and schematic logic remain identical due to functional equivalence.

CY62167GN30-45BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-VFBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62167GN30-45BVXI FAQ

1.How can I place an order for CY62167GN30-45BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62167GN30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62167GN30-45BVXI reliable?

The price and inventory of CY62167GN30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GN30-45BVXI is usually 5 days.

3.What payment methods are accepted for CY62167GN30-45BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GN30-45BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62167GN30-45BVXI?

CY62167GN30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62167GN30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62167GN30-45BVXI?

For technical support, including CY62167GN30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GN30-45BVXI requirements.

6.How does Aetrix verify that CY62167GN30-45BVXI is sourced from the original manufacturer or authorized distributors?

All CY62167GN30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GN30-45BVXI meets industry standards.

7.What is the process for return or replacement of CY62167GN30-45BVXI?

All CY62167GN30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GN30-45BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62167GN30-45BVXI part is unused and in its original packaging.

Return procedure for CY62167GN30-45BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62167GN30-45BVXI Tags

  • CY62167GN30-45BVXI
  • CY62167GN30-45BVXI PDF
  • CY62167GN30-45BVXI Datasheet
  • CY62167GN30-45BVXI Specifications
  • CY62167GN30-45BVXI Images
  • Infineon Technologies
  • Infineon Technologies CY62167GN30-45BVXI
  • Buy CY62167GN30-45BVXI
  • CY62167GN30-45BVXI Price
  • CY62167GN30-45BVXI Distributor
  • CY62167GN30-45BVXI Supplier
  • CY62167GN30-45BVXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER