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Infineon Technologies CY62167GN30-45BVXIT
- Part No.:
- CY62167GN30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167GN30-45BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,719
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Product details
Overview
CY62167GN30-45BVXIT from Cypress Semiconductor is a 16-Mbit MoBL® CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time with ultra-low standby current (1.5 µA typical), 2.2–3.6 V supply, and industrial temperature range (–40 °C to +85 °C). It supports automatic power-down when deselected and is packaged in Pb-free 48-ball VFBGA for portable battery-powered systems.
For engineers reviewing the CY62167GN30-45BVXIT datasheet, CY62167GN30-45BVXIT pinout, CY62167GN30-45BVXIT application, or CY62167GN30-45BVXIT equivalent, key selection criteria include configurable data width (16-bit/8-bit), low-voltage operation, TSOP I/VFBGA package compatibility, and MoBL® ultra-low ISB2 (≤8 µA) for extended battery life in handheld devices.
Technical Context
This SRAM implements dual chip enable (CE1/CE2) and independent byte enables (BHE/BLE) to support flexible memory expansion and partial-word writes. Its automatic power-down circuit reduces ICCDR to ≤8 µA when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - enabling true zero-power retention during idle cycles.
The device features two distinct operating modes: 1M × 16 mode (BYTE tied to VCC) and 2M × 8 mode (BYTE tied to VSS), with A20 exposed on pin 45 only in the latter configuration. All timing parameters - including tAA (45 ns), tDOE (22 ns), and tHZOE (18 ns) - are guaranteed over full voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (configurable as 1M × 16 or 2M × 8) |
| Access Time | 45 ns - guarantees real-time data availability in high-speed microcontroller interfaces |
| Supply Voltage | 2.2 V to 3.6 V - compatible with modern low-voltage SoCs and battery-operated systems |
| Standby Current | 1.5 µA typical / 8 µA max - enables multi-year battery life in always-on IoT sensors |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and automotive infotainment modules |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal efficiency (θJA = 31.5 °C/W) |
| Data Retention Voltage | ≥1.0 V - maintains stored data during brown-out or sleep-mode VCC droop |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.8 mm ball pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word (16-bit) or 2M-word (8-bit) addressing |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled by BLE; high-impedance when BLE HIGH or device deselected |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled by BHE; isolated when BHE HIGH or device deselected |
| CE1, CE2 | Chip Enable Inputs | Dual active-Low/active-High enables allow hierarchical memory banking and seamless expansion |
| OE | Output Enable | Controls output drivers only; does not affect internal state or power-down behavior |
| WE | Write Enable | Active-Low signal initiating write cycle; timing-critical for meeting tSD (25 ns) and tHD (0 ns) requirements |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking - enables partial-word updates without read-modify-write overhead |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; dual VSS balls improve noise immunity and ground return path integrity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 1.5 µA typical - extends battery runtime in cellular handsets and wearables |
| Configurable Memory Organization | Hardware-selectable 1M × 16 or 2M × 8 via BYTE pin tie - eliminates need for external multiplexing logic |
| Dual Chip Enable Logic | CE1 (active LOW) and CE2 (active HIGH) enable cascaded bank decoding for >16 Mbit systems |
| Automatic Power-Down | Enters <1 µA retention mode when CE1 HIGH, CE2 LOW, or both BHE/BLE HIGH - no software intervention required |
| Robust Signal Timing | tLZOE = 5 ns and tHZOE = 18 ns ensure clean bus turnaround in shared-data-bus microcontroller designs |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
|
Use Scenario: Real-time ECG waveform buffering in battery-powered handheld monitors with 24-hour continuous operation. IC Role / Device Role / Timing Role: High-speed, low-leakage SRAM acting as primary acquisition buffer between ADC and ARM Cortex-M4 processor. Use Value: 1.5 µA standby current enables multi-day operation on coin-cell; 45 ns access ensures no sample loss at 10 kSPS sampling rate. |
Use Scenario: Non-volatile event logging in DIN-rail mounted PLCs requiring deterministic write latency under 50 ns. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for timestamped alarm records and sensor history snapshots. Use Value: Dual CE inputs allow seamless integration into existing 16-bit ISA bus backplanes; industrial temp rating ensures reliability in uncooled enclosures. |
| Automotive Infotainment Head Unit | Wireless Sensor Node Hub |
|
Use Scenario: UI frame buffer and audio metadata cache in head units with strict EMC and thermal constraints. IC Role / Device Role / Timing Role: Low-noise, low-power SRAM interfacing directly to TI AM65x processor's EMIF controller. Use Value: VFBGA package minimizes board area and improves thermal dissipation; 2.2–3.6 V range matches automotive LDO output tolerances. |
Use Scenario: Edge-processing buffer in LoRaWAN gateways aggregating data from 50+ sub-GHz sensors before uplink transmission. IC Role / Device Role / Timing Role: Burst-mode memory for temporary packet assembly prior to AES encryption and RF modulation. Use Value: Automatic power-down cuts leakage by 99% between transmissions; byte-enable capability optimizes energy per byte written. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-45NLI | Same density (1M × 16), 45 ns, but higher ISB (15 µA max) and wider VCC range (2.7–3.6 V only) | Lacks 2M × 8 mode and automatic power-down; requires external logic for byte masking | Select when legacy 3.3 V-only systems demand pin-for-pin replacement without revalidation of low-VCC behavior |
| ON Semiconductor NVSRAM N25S128A13T | Non-volatile 16 Mbit (1M × 16), 55 ns, integrated EEPROM backup; no automatic power-down | Eliminates external battery/capacitor for data retention but adds 100 µs write latency and 100K-cycle endurance limit | Select when data persistence across power cycles is mandatory and 45 ns speed is secondary to non-volatility |
Compared with IS62WV102416BLL-45NLI and N25S128A13T, CY62167GN30-45BVXIT uniquely delivers 45 ns speed + 1.5 µA standby + hardware-configurable organization in a single VFBGA package - making it optimal for cost-sensitive, battery-constrained, high-throughput embedded buffers.
Availability
CY62167GN30-45BVXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, automotive infotainment head units, and wireless sensor node hubs requiring stable component supply across long production lifecycles.
Supply support for CY62167GN30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a global leader in embedded system solutions, specializing in high-performance memory, PSoC programmable systems-on-chip, and USB-C controllers.
The CY62167GN30 belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in portable and energy-constrained electronics.
FAQ
What is the function of the BYTE pin on CY62167GN30-45BVXIT?
The BYTE pin configures memory organization: tying BYTE to VCC selects 1M × 16 mode; tying BYTE to VSS enables 2M × 8 mode. In 2M × 8 mode, pin 45 becomes A20, and BHE/BLE/I/O8–I/O14 are unused. This hardware-selectable feature eliminates external logic for width adaptation.
Can CY62167GN30-45BVXIT operate reliably at 2.2 V?
Yes - the device is fully specified from 2.2 V to 3.6 V. At 2.2 V, tRC remains 45 ns, ISB2 is ≤3 µA at 25 °C, and all DC parameters (VIH/VIL, VOH/VOL) meet spec. The 2.2 V minimum enables direct interface with Li-ion battery discharge tails and ultra-low-power PMIC outputs.
How does automatic power-down activate, and what is its impact on data retention?
Automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH. In this state, ICCDR drops to ≤8 µA while retaining data down to VCC = 1.0 V. No external control or clock is needed - the circuit responds purely to input logic levels.
Is the 48-ball VFBGA pinout identical to the 48-pin TSOP I version?
No - pin assignments differ significantly. For example, A16 is on ball G1 in VFBGA but pin 1 in TSOP I; I/O15 is on ball D1 in VFBGA but pin 48 in TSOP I. The VFBGA layout prioritizes signal integrity and thermal performance, while TSOP I follows legacy footprint conventions. Layout migration requires netlist verification.
CY62167GN30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167GN30-45BVXIT FAQ
1.How can I place an order for CY62167GN30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167GN30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167GN30-45BVXIT reliable?
The price and inventory of CY62167GN30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GN30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62167GN30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GN30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167GN30-45BVXIT?
CY62167GN30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167GN30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167GN30-45BVXIT?
For technical support, including CY62167GN30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GN30-45BVXIT requirements.
6.How does Aetrix verify that CY62167GN30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62167GN30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GN30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62167GN30-45BVXIT?
All CY62167GN30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GN30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167GN30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62167GN30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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