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Infineon Technologies CY62167GN30-45ZXI

Part No.:
CY62167GN30-45ZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY62167GN30-45ZXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,739

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Product details

Overview

CY62167GN30-45ZXI from Cypress Semiconductor is a 16-Mbit MoBL® Static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time with ultra-low standby current (1.5 µA typical), 2.2–3.6 V supply, and industrial temperature range (–40 °C to +85 °C). It supports automatic power-down when deselected and is packaged in Pb-free 48-ball VFBGA for portable memory subsystems.

For engineers reviewing the CY62167GN30-45ZXI datasheet, CY62167GN30-45ZXI pinout, CY62167GN30-45ZXI application, or CY62167GN30-45ZXI equivalent, key selection criteria include configurable data width (16-bit/8-bit), low-power MoBL architecture, TSOP I/VFBGA package compatibility, and CMOS-level byte enable control for embedded memory expansion.

Technical Context

The CY62167GN30-45ZXI implements dual chip enable (CE1/CE2) logic with independent byte high/low enables (BHE/BLE), enabling selective 8-bit or 16-bit access without external gating. Its automatic power-down circuit reduces ICC to ≤8 µA when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - verified under CMOS input conditions.

It supports two memory configurations via BYTE pin control: tied to VCC for 1M × 16 mode (A0–A19 address space), or tied to VSS for 2M × 8 mode (A0–A20, with A20 on I/O15 pin). Read/write timing is fully specified for 45 ns cycle, including tAA = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (configurable as 1M × 16 or 2M × 8)
Access Time 45 ns - guarantees full-speed operation with 22.22 MHz bus clock
Supply Voltage 2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V system rails
Standby Current 1.5 µA typical / 8 µA max - enables multi-year battery life in always-on portable devices
Operating Temperature –40 °C to +85 °C - qualified for industrial-grade embedded systems
Package 48-ball VFBGA (Z suffix) - 5.5 mm × 8 mm footprint, 0.8 mm ball pitch
I/O Drive Strength VOL = 0.4 V @ 2.1 mA (VCC ≥ 2.7 V) - ensures clean signal integrity into 50 Ω loads

Pinout & Package

48-ball VFBGA (Z package) with 0.8 mm ball pitch and 5.5 mm × 8 mm body size. Pin functions validated per Cypress Document 002-28515 Rev. *A Figure 1.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 1M × 16 mode uses A0–A19; 2M × 8 mode repurposes I/O15 as A20
I/O0–I/O15 Bidirectional Data Bus High-impedance during deselect, OE HIGH, or write cycles; supports byte-wide access via BHE/BLE
CE1, CE2 Chip Enable Controls Active-low CE1 AND active-high CE2 required for device selection; either CE1 HIGH or CE2 LOW forces standby
OE Output Enable LOW enables read data output; HIGH places I/O pins in high-Z state independent of CE status
WE Write Enable LOW initiates write; timing referenced to CE1/CE2/BHE/BLE edges per Truth Table (p.12)
BHE, BLE Byte Enable Inputs Control upper/lower 8 bits independently; both HIGH disables all I/O drivers and triggers auto power-down
BYTE Configuration Select Tied to VCC for 1M × 16; tied to VSS for 2M × 8 (enables A20 on I/O15)
VCC, VSS Power Supply Single 2.2–3.6 V supply; decoupling required per layout guidelines (p.14)

Key Features

Feature Design Value
MoBL® Ultra-Low Standby Power 1.5 µA typical ISB1 - extends battery runtime in handheld medical monitors and IoT edge nodes
Dual Chip Enable Architecture CE1 (active-low) + CE2 (active-high) enables hierarchical memory banking without external logic
Configurable Data Width Hardware-selectable 1M × 16 or 2M × 8 via BYTE pin - eliminates need for multiple SKUs in design-in
Automatic Power-Down 99% ICC reduction when deselected - triggered by CE1 HIGH, CE2 LOW, or BHE/BLE both HIGH
CMOS-Compatible Timing tLZOE = 5 ns, tHZOE = 18 ns - supports fast bus turnaround in microcontroller-based data loggers

Applications

Portable Medical Monitor Industrial PLC Data Buffer

Use Scenario: Continuous ECG waveform capture and local storage in battery-powered patient monitors.

IC Role / Device Role / Timing Role: Offloads MCU SRAM bandwidth by serving as dedicated 16-bit buffer with 45 ns read latency.

Use Value: 1.5 µA standby current enables >3-year battery life between charges while retaining waveform history.

Use Scenario: Real-time I/O status logging in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic process data with industrial temperature tolerance.

Use Value: –40 °C to +85 °C operation and 8 µA max ISB ensure stable logging during factory thermal cycling.

Wireless Sensor Node Automotive Infotainment Cache

Use Scenario: Intermittent environmental sensing (temp/humidity/pressure) with burst transmission over BLE.

IC Role / Device Role / Timing Role: Low-voltage (2.2 V) SRAM holding sensor aggregates before RF transmission.

Use Value: 2.2 V minimum VCC allows direct connection to partially discharged Li-ion cells (2.5 V avg).

Use Scenario: Temporary UI asset caching in head-unit displays during boot and menu navigation.

IC Role / Device Role / Timing Role: Fast-access frame buffer supporting 60 Hz GUI rendering with minimal latency.

Use Value: 45 ns tAA and tDOE = 22 ns enable sub-millisecond pixel updates without MCU stall cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV102416BLL-45NLI Same density (1M × 16), 45 ns, but 2.7–3.6 V only; no 2.2 V support Lacks ultra-low 2.2 V operation - unsuitable for deep-discharge battery systems Select if system rail is fixed at 3.3 V and VFBGA footprint compatibility is confirmed
ON Semiconductor NVSRAM NVTFS1624G16T3G Non-volatile SRAM with integrated EEPROM backup; 55 ns access; 3.0–3.6 V only Provides data retention after power loss - adds cost and complexity where not required Choose only when persistent memory across power cycles is mandatory

Compared with IS62WV102416BLL-45NLI and NVTFS1624G16T3G, CY62167GN30-45ZXI uniquely delivers 2.2 V operation, 1.5 µA standby, and hardware-configurable width - making it optimal for cost-sensitive, battery-constrained industrial and portable designs where volatility is acceptable.

Availability

CY62167GN30-45ZXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, wireless sensor nodes, and automotive infotainment caches requiring stable component supply across extended product lifecycles.

Supply support for CY62167GN30-45ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for industrial, automotive, and consumer electronics with focus on reliability and low-power innovation.

CY62167GN30-45ZXI belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-constrained applications requiring ultra-low standby current and flexible memory organization.

FAQ

What is the function of the BYTE pin on CY62167GN30-45ZXI?

The BYTE pin selects memory configuration: tied to VCC enables 1M × 16 mode using A0–A19; tied to VSS enables 2M × 8 mode where I/O15 becomes A20 and BHE/BLE/I/O8–I/O14 are unused. This hardware-selectable feature avoids firmware or external logic changes during board reuse.

Can CY62167GN30-45ZXI operate at 2.2 V while maintaining 45 ns access time?

Yes - the 45 ns access time is guaranteed across the full 2.2 V to 3.6 V supply range per datasheet Section "Switching Characteristics" (p.7), with tAA = 45 ns and tRC = 45 ns specified at VCC = 2.2 V, TA = 85 °C, and f = fmax.

How does automatic power-down activate, and what is its impact on I/O states?

Automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH. During this state, ICC drops to ≤8 µA and all I/O pins enter high-impedance - verified in Functional Description (p.2) and Electrical Characteristics (p.4, ISB1/ISB2 specs).

Is the 48-ball VFBGA package (Z suffix) pin-compatible with the 48-pin TSOP I variant?

No - VFBGA (Z) and TSOP I (X) packages have different pinouts and ball/pad mappings. The TSOP I version uses BYTE pin on pin 45 for configuration, while VFBGA places BYTE on ball D3. Layout migration requires netlist and footprint revision per Cypress Package Diagrams (p.14).

CY62167GN30-45ZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY62167GN30-45ZXI FAQ

1.How can I place an order for CY62167GN30-45ZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62167GN30-45ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62167GN30-45ZXI reliable?

The price and inventory of CY62167GN30-45ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GN30-45ZXI is usually 5 days.

3.What payment methods are accepted for CY62167GN30-45ZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GN30-45ZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62167GN30-45ZXI?

CY62167GN30-45ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62167GN30-45ZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62167GN30-45ZXI?

For technical support, including CY62167GN30-45ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GN30-45ZXI requirements.

6.How does Aetrix verify that CY62167GN30-45ZXI is sourced from the original manufacturer or authorized distributors?

All CY62167GN30-45ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GN30-45ZXI meets industry standards.

7.What is the process for return or replacement of CY62167GN30-45ZXI?

All CY62167GN30-45ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GN30-45ZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62167GN30-45ZXI part is unused and in its original packaging.

Return procedure for CY62167GN30-45ZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62167GN30-45ZXI Tags

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