Infineon Technologies CY62167GN30-45ZXIT
- Part No.:
- CY62167GN30-45ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62167GN30-45ZXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:3,085
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Product details
Overview
CY62167GN30-45ZXIT from Cypress Semiconductor is a 16-Mbit MoBL® CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time with ultra-low standby current (1.5 µA typical), wide 2.2–3.6 V supply range, and industrial temperature support (–40 °C to +85 °C). It enables battery-sensitive portable systems including cellular handsets and handheld instrumentation via automatic power-down and CMOS efficiency.
For engineers reviewing the CY62167GN30-45ZXIT datasheet, CY62167GN30-45ZXIT pinout, CY62167GN30-45ZXIT application, or CY62167GN30-45ZXIT equivalent, key selection criteria include configurable data width (16-bit/8-bit), TSOP I and VFBGA package compatibility, byte-enable control (BHE/ BLE), low-voltage operation, and guaranteed 45 ns read/write timing under industrial conditions.
Technical Context
The CY62167GN30-45ZXIT implements dual-mode memory organization (1M × 16 or 2M × 8) controlled by the BYTE pin in TSOP I or ball H6 in VFBGA. Its automatic power-down circuit reduces ICC to ≤8 µA when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - independent of address toggling.
Read and write operations use separate enable logic: reads require CE1 LOW, CE2 HIGH, OE LOW, and WE HIGH; writes require CE1 LOW, CE2 HIGH, WE LOW, and active BHE or BLE. Output impedance transitions (tLZOE = 5 ns, tHZOE = 18 ns) ensure clean bus sharing in multi-SRAM systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1M × 16 or 2M × 8 configuration) |
| Access Time | 45 ns - guarantees deterministic read/write latency for real-time microcontroller interfaces |
| Supply Voltage | 2.2 V to 3.6 V - supports single-supply operation with Li-ion or regulated DC-DC outputs |
| Standby Current | 1.5 µA typical / 8 µA max - enables >1-year battery life in always-on portable devices |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and telecom equipment |
| Package | 48-ball VFBGA (RoHS-compliant) - provides compact footprint and thermal resistance θJA = 31.5 °C/W |
| Input Leakage | ±1 µA - ensures stable high-impedance hold during power-down without external pull resistors |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.5 mm pitch, bottom-side thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word (16-bit mode) or 2M-word (8-bit mode) addressing |
| I/O0–I/O7 | Data Bus (Low Byte) | Active when BLE = LOW; used for 8-bit mode or lower byte in 16-bit mode |
| I/O8–I/O15 | Data Bus (High Byte) | Active when BHE = LOW; used only in 16-bit mode or upper byte in mixed configurations |
| CE1, CE2 | Chip Enable Controls | Dual CE architecture enables hierarchical memory mapping and seamless expansion across multiple SRAMs |
| OE | Output Enable | Controls output drivers independently of CE; allows read-only gating without deselection |
| WE | Write Enable | Active-LOW signal initiating write cycle; timing-critical for meeting 45 ns tWC and tSD requirements |
| BHE, BLE | Byte Enable Inputs | Select high/low byte for partial writes; essential for 8-bit microprocessor bus interfacing |
| VCC, VSS | Power & Ground | Single 2.2–3.6 V supply; dual VSS balls improve noise immunity and reduce ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 1.5 µA typical - extends battery runtime without sacrificing speed |
| Configurable Data Width | Hardware-selectable 1M × 16 or 2M × 8 via BYTE pin (TSOP I) or ball H6 (VFBGA) - eliminates need for two SKUs |
| Automatic Power-Down | Enters <8 µA ISB1 mode when CE1 HIGH, CE2 LOW, or both BHE/ BLE HIGH - no software overhead required |
| CMOS-Compatible Timing | Guaranteed 45 ns tRC and tWC with 1 V/ns edge rates - interoperable with ARM Cortex-M, Renesas RL78, and legacy 8051 buses |
| Industrial Temperature Support | Validated operation from –40 °C to +85 °C - suitable for automotive infotainment head units and industrial HMIs |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
|
Use Scenario: Real-time ECG waveform capture and local display buffering in battery-powered handheld monitors. IC Role / Device Role / Timing Role: High-speed, low-power SRAM acting as frame buffer between ADC controller and LCD driver. Use Value: 45 ns access enables 10 kSPS sampling with zero wait states; 1.5 µA ISB extends 24-hour runtime on coin-cell backup. |
Use Scenario: Temporary storage of sensor logs and control state variables in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding runtime parameters during firmware updates and brown-out recovery. Use Value: Dual CE and byte enables allow safe concurrent read/write access by CPU and watchdog co-processor without bus contention. |
| Wireless Sensor Node | Automotive Infotainment HMI |
|
Use Scenario: Storing encrypted sensor payloads before BLE transmission in energy-harvesting IoT nodes. IC Role / Device Role / Timing Role: Low-voltage SRAM interfaced directly to ultra-low-power MCU (e.g., TI MSP430FR) via 2.5 V I/O. Use Value: 2.2 V minimum VCC enables direct connection to buck-boost converters; ISB2 ≤3 µA at 25 °C minimizes quiescent drain. |
Use Scenario: UI asset caching (icons, fonts, touch coordinates) in automotive head units with ASIL-B functional safety requirements. IC Role / Device Role / Timing Role: Fast-access memory for GUI rendering engine, isolated from main SoC DRAM via dedicated AXI-lite interface. Use Value: TSOP I package supports reflow-compatible assembly; 85 °C rating ensures reliability behind dashboard glass under solar loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-45NLI | Same density (1M × 16), 45 ns speed, but higher ISB (12 µA max) and narrower VCC (2.7–3.6 V) | Lacks 2M × 8 mode and automatic power-down; requires external logic for byte masking | Choose if board already uses ISSI's footprint and voltage rail is fixed at 3.3 V |
| Renesas R1LV0216R-45P-E | Identical 1M × 16/2M × 8 config, 45 ns, but rated only to +70 °C and lacks BYTE pin flexibility | No VFBGA option; TSOP I pinout differs (no NC pins at A16/A19 locations) | Prefer for cost-sensitive consumer electronics where extended temperature is not required |
Compared with IS62WV102416BLL-45NLI and R1LV0216R-45P-E, the CY62167GN30-45ZXIT uniquely delivers industrial temperature support, sub-2 µA standby, and hardware-configurable data width in both VFBGA and TSOP I - critical for next-gen portable and automotive designs requiring long-term supply stability.
Availability
CY62167GN30-45ZXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, wireless sensor nodes, and automotive infotainment HMIs requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for CY62167GN30-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and IoT applications, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.
The CY62167GN30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in portable and energy-constrained embedded systems.
FAQ
What is the function of the BYTE pin on CY62167GN30-45ZXIT?
The BYTE pin determines memory organization: tied to VCC in TSOP I packages selects 1M × 16 mode; tied to VSS enables 2M × 8 mode, repurposing pin 45 as A20. In VFBGA packages, ball H6 serves the same function and supports future 32M density upgrades. This pin is not present in all variants but is active and required for configuration in this part number.
Can CY62167GN30-45ZXIT operate reliably at 2.2 V?
Yes - it is fully specified from 2.2 V to 3.6 V across the industrial temperature range. At 2.2 V, tRC remains 45 ns (guaranteed), ISB2 is ≤3 µA at 25 °C, and VIH/VIL thresholds scale proportionally. All AC and DC parameters in the datasheet include 2.2 V test conditions, and the device passes qualification per JEDEC JESD47.
How does automatic power-down work without external control signals?
Automatic power-down activates when any of these conditions occur: CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH. No clock or software command is needed - internal logic detects static address/data bus states and gates VCC current to ≤8 µA. The feature is inherent to the silicon design and requires no initialization or register writes.
Is the 48-ball VFBGA package lead-free and RoHS-compliant?
Yes - the CY62167GN30-45ZXIT uses a Pb-free, RoHS-compliant 48-ball VFBGA package with matte tin surface finish and NiPdAu under-bump metallurgy. It meets JEDEC J-STD-020D moisture sensitivity level 3 (MSL3), and reflow profile compliance is documented in Cypress PCN193805.
CY62167GN30-45ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62167GN30-45ZXIT FAQ
1.How can I place an order for CY62167GN30-45ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167GN30-45ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167GN30-45ZXIT reliable?
The price and inventory of CY62167GN30-45ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167GN30-45ZXIT is usually 5 days.
3.What payment methods are accepted for CY62167GN30-45ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167GN30-45ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167GN30-45ZXIT?
CY62167GN30-45ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167GN30-45ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167GN30-45ZXIT?
For technical support, including CY62167GN30-45ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167GN30-45ZXIT requirements.
6.How does Aetrix verify that CY62167GN30-45ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62167GN30-45ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167GN30-45ZXIT meets industry standards.
7.What is the process for return or replacement of CY62167GN30-45ZXIT?
All CY62167GN30-45ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167GN30-45ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167GN30-45ZXIT part is unused and in its original packaging.
Return procedure for CY62167GN30-45ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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