Infineon Technologies CY62168DV30LL-55BVIT

Overview

CY62168DV30LL-55BVIT from Cypress Semiconductor is a 16-Mbit (2 M × 8) MoBL® CMOS static RAM with 55 ns access time, operating across 2.2 V–3.6 V supply, delivering ultra-low active current (15 mA at f_Max) and standby current as low as 2.5 µA. It supports automatic power-down on chip deselect and is designed for battery-sensitive portable systems including cellular handsets and handheld instrumentation.

For engineers reviewing the CY62168DV30LL-55BVIT datasheet, CY62168DV30LL-55BVIT pinout, CY62168DV30LL-55BVIT application, or CY62168DV30LL-55BVIT equivalent, key selection criteria include its dual chip enable (CE1/CE2) interface, VFBGA-48 package compatibility, 20-bit address bus (A0–A20), and guaranteed 55 ns read/write cycle timing under industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a 2048K × 8 asynchronous memory array using complementary metal oxide semiconductor (CMOS) process technology optimized for speed/power trade-off. Its dual chip enable architecture (CE1 active-low, CE2 active-high) enables flexible memory expansion and hierarchical decoding in multi-bank systems.

The device features three distinct power states: active (ICC = 15 mA max at 55 ns), automatic CE-based standby (ISB2 = 22 µA max), and data retention mode (ICCDR ≤ 10 µA at VDR ≥ 1.5 V). I/O pins enter high-impedance state during deselect, OE HIGH, or write cycles-ensuring clean bus sharing without external isolation.

Key Specifications

Pinout & Package

Package: 48-ball very fine ball grid array (VFBGA), 6 mm × 8 mm footprint, 0.5 mm pitch, JEDEC MO-255 compliant. Thermal resistance θ_JA = 55 °C/W (2-layer PCB).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV20488BLL-55NLI and NB16LV20488B-55Z, the CY62168DV30LL-55BVIT uniquely delivers 2.2 V operation and sub-3 µA standby in a space-constrained VFBGA-making it optimal for battery-powered edge nodes where voltage headroom and quiescent power are critical.

Availability

CY62168DV30LL-55BVIT is available at Aetrix Electronics and suitable for cellular modem design, portable medical instrumentation, industrial data loggers, and wearable fitness trackers requiring stable component supply and long-term lifecycle assurance.

Supply support for CY62168DV30LL-55BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, automotive, and industrial markets.

The MoBL® (More Battery Life) SRAM product line targets portable and energy-constrained applications requiring fast, deterministic access with minimal active and standby current-optimized for battery runtime extension without sacrificing performance.

FAQ

What is the minimum VCC required to retain data in CY62168DV30LL-55BVIT?

The device guarantees data retention down to 1.5 V (VDR ≥ 1.5 V), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 10 µA, enabling operation during brown-out or supercapacitor holdover. This is verified across the full industrial temperature range and does not require external refresh or backup circuitry.

How does the dual chip enable (CE1/CE2) interface improve memory expansion?

CE1 (active-low) and CE2 (active-high) allow hierarchical decoding: CE2 can serve as a bank select signal while CE1 acts as row enable, eliminating need for external logic gates in 4-bank configurations. Truth table confirms valid access only when CE1 = LOW AND CE2 = HIGH-enabling clean partitioning of address space across multiple devices.

Can DNU pins be tied to VCC or left unconnected?

No-DNU (Do Not Use) pins must be left floating or tied to VSS (ground) per datasheet Note 2. Connecting them to VCC may cause undefined behavior or increased leakage. All 10 DNU pins (e.g., pins A2, A3, D1, D2, etc.) are electrically isolated and have no internal connection; grounding ensures predictable noise immunity and avoids floating-node oscillation.

Is CY62168DV30LL-55BVIT RoHS-compliant and Pb-free?

No-the "-55BVIT" suffix indicates a non-Pb-free (lead-containing) 48-ball VFBGA package, as explicitly stated in the Features section ("Available in non Pb-free 48-ball VFBGA"). For Pb-free alternatives, refer to Cypress' "-55BVXI" or "-55BV2I" ordering codes, which use lead-free solder spheres and comply with RoHS Directive 2011/65/EU.