Infineon Technologies CY62168DV30LL-55BVXI

Overview

CY62168DV30LL-55BVXI from Cypress Semiconductor is a 16-Mbit (2M × 8) MoBL® CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and ultra-low active current (15 mA at f_Max). It features dual chip enables (CE1/CE2), automatic power-down on deselect, and high-impedance I/O control-designed for battery-constrained portable systems including cellular handsets and handheld medical monitors.

For engineers reviewing the CY62168DV30LL-55BVXI datasheet, CY62168DV30LL-55BVXI pinout, CY62168DV30LL-55BVXI application, or CY62168DV30LL-55BVXI equivalent, key selection criteria include standby current (≤22 µA), VFBGA-48 package compatibility, CE-controlled power-down timing (t_PD = 55 ns), and guaranteed data retention down to 1.5 V.

Technical Context

This SRAM implements a full synchronous interface with independent CE1/CE2 logic enabling hierarchical memory banking and seamless expansion across multiple devices. Its dual-enable architecture allows selective activation while maintaining all other banks in sub-22 µA standby mode.

The device uses CMOS circuitry with optimized sense amplifiers and low-leakage transistors to achieve 2 mA typical ICC at 1 MHz and ≤10 µA data retention current at V_DR = 1.5 V. Tri-state control is enforced via OE, WE, and CE states per truth table-no bus contention occurs during read/write transitions or deselect events.

Key Specifications

Pinout & Package

48-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch, JEDEC MO-244 compliant, Pb-free termination. Seating plane height ≤0.55 mm; ball diameter 0.30 mm ±0.05 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS62WV2M8EBLL-55NLI and N25S80A55T, the CY62168DV30LL-55BVXI uniquely delivers 2.2 V operation, sub-22 µA CE-triggered standby, and Pb-free VFBGA in one package-making it optimal for compact, long-life portable designs where voltage flexibility and ultra-low quiescent draw are critical.

Availability

CY62168DV30LL-55BVXI is available at Aetrix Electronics and suitable for cellular handset design, portable medical instrumentation, and industrial handheld terminals requiring stable component supply across extended product lifecycles.

Supply support for CY62168DV30LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-reliability memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.

The MoBL® (More Battery Life) SRAM product line was engineered specifically for portable electronics-prioritizing nanowatt standby, wide-V_CC tolerance, and minimal board area over raw density or speed.

FAQ

What is the minimum V_CC required to retain data in CY62168DV30LL-55BVXI?

The device guarantees data retention down to 1.5 V (V_DR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤10 µA with CE1 HIGH or CE2 LOW. Operation below 2.2 V is not supported for active read/write cycles, but retention is fully functional during brown-out or battery-swapping scenarios.

Can CE1 and CE2 be tied together for single-enable operation?

Yes-CE1 and CE2 may be connected to a common control signal, but only if inverted logic is applied: CE1 must be driven active-LOW while CE2 is inverted (e.g., via small logic gate) to remain active-HIGH during selection. Direct tying without inversion violates the CE1 LOW + CE2 HIGH requirement and will prevent device activation.

Does the CY62168DV30LL-55BVXI require external pull-up or pull-down resistors on DNU pins?

Per datasheet Note 2, DNU pins (e.g., B2, C2, D1) must be left floating or tied to VSS-no pull-up resistors are permitted. Connecting them to VCC or leaving them unconnected without VSS tie may cause undefined internal node biasing and increased leakage current, potentially exceeding ISB2 specifications.

How does the automatic power-down feature interact with OE and WE during partial address changes?

Automatic power-down is triggered solely by CE1/CE2 state-not by address or data activity. If CE1 is HIGH or CE2 is LOW, the device enters standby regardless of OE/WE state or address toggling. Address transitions alone (with CE1/CE2 active) do not induce power-down; only CE assertion controls the 99%+ current reduction.