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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62168DV30LL-55BVXIT

Name: CY62168DV30LL-55BVXIT
Brand: Infineon Technologies
SKU: CY62168DV30LL-55BVXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY62168DV30LL-55BVXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 48-VFBGA

Datasheet:: CY62168DV30LL-55BVXIT.pdf

Description:: IC SRAM 16MBIT PARALLEL 48VFBGA

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Product details

Overview

CY62168DV30LL-55BVXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) MoBL® CMOS static RAM with 55 ns access time, operating across 2.2V–3.6V supply, delivering ultra-low active current (15 mA at f_Max) and standby current as low as 2.5 µA. It features dual chip enables (CE1/CE2), automatic power-down on deselect, and high-impedance I/O control-designed for battery-sensitive portable systems including cellular handsets and handheld instrumentation.

For engineers reviewing the CY62168DV30LL-55BVXIT datasheet, CY62168DV30LL-55BVXIT pinout, CY62168DV30LL-55BVXIT application, or CY62168DV30LL-55BVXIT equivalent, key selection criteria include V_CC range compatibility, CE-controlled power-down behavior, t_RC/t_WC timing compliance, and 48-ball VFBGA footprint integration in space-constrained PCB layouts.

Technical Context

This SRAM implements a full CMOS 2048K × 8 asynchronous architecture with independent CE1/CE2 logic enabling flexible memory banking and hierarchical enable control. Its automatic power-down activates when CE1 is HIGH or CE2 is LOW, reducing ICC to ≤22 µA without external sequencing.

The device supports true bidirectional I/O (I/O0–I/O7) with three-state control governed by OE, WE, and CE states per truth table. Read and write cycles are fully decoupled: reads require CE1=LOW, CE2=HIGH, OE=LOW, WE=HIGH; writes require CE1=LOW, CE2=HIGH, WE=LOW-ensuring deterministic bus contention avoidance.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	16 Mbit (2,097,152 × 8 bits); supports byte-wide data interface without address multiplexing.
Access Time	55 ns max; guarantees t_AA, t_ACE, and t_DOE meet system timing at 18.2 MHz sustained read rate.
V_CC Range	2.2 V to 3.6 V; compatible with Li-ion battery discharge curve and mixed-voltage SoC interfaces.
I_CC Active	15 mA typical at f_Max; enables <100 mW peak power in 3.3V systems during burst transfers.
I_SB2 Standby	2.5 µA typical; reduces quiescent power to ~8.25 µW at 3.3V-critical for >1-week RTC+SRAM retention.
Package	48-ball VFBGA (8 mm × 9.5 mm × 1 mm); fine-pitch (0.8 mm ball pitch) for high-density portable PCBs.
Data Retention V_CC	1.5 V min; maintains stored data during brown-out or backup-battery operation down to 1.5V.

Pinout & Package

48-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 8 mm × 9.5 mm body, and 1 mm height. Pin 1 (A1) located at top-left corner per JEDEC MO-249 standard.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address Inputs	21-bit address bus supporting full 2M-word decoding; A20 enables access to highest 1M-word block.
I/O0–I/O7	Bidirectional Data Bus	True 8-bit I/O port; enters high-Z on CE1 HIGH, CE2 LOW, OE HIGH, or during write (WE LOW).
CE1, CE2	Chip Enable Controls	Active-LOW CE1 + Active-HIGH CE2 enable hierarchical bank selection and automatic power-down when inactive.
OE	Output Enable	Controls output driver only; does not affect internal state or power mode-enables read gating without deselect.
WE	Write Enable	Active-LOW signal initiating write cycle; combined with CE1/CE2 defines write window per truth table.
VCC, VSS	Power Rails	Dual VCC (2.2–3.6V) and ground pins distributed across package for low-noise supply routing.
DNU	No-Connect	Do-Not-Use pins (e.g., ball E2, F1); must float or tie to VSS per datasheet to prevent latch-up.

Key Features

Feature	Design Value
MoBL® Ultra-Low Power Architecture	Reduces active current by 75% vs. legacy 5V SRAMs and cuts standby draw to sub-3 µA-extending battery life in always-on subsystems.
Dual Chip Enable Logic (CE1/CE2)	Enables seamless memory expansion up to 4 banks using simple AND/OR gate logic-no external decoder required.
Automatic Power-Down on Deselect	Eliminates need for external power-gating circuitry; transitions to ISB2 mode within 55 ns of CE deassertion.
High-Reliability Data Retention	Maintains valid data at VCC ≥ 1.5 V and TA = –40°C to +85°C-supports backup operation during main supply failure.
CMOS-Compatible Timing	Meets JEDEC-standard t_RC, t_WC, and tri-state delays (t_LZOE/t_HZOE) without external wait-state insertion.

Applications

Cellular Baseband Subsystem

Portable Medical Monitor Buffer

Use Scenario: Stores real-time sensor fusion data and firmware patch tables in LTE/5G modem subsystems with intermittent CPU access.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM buffer between baseband processor and RF transceiver; handles burst-mode DMA reads/writes at 55 ns latency.

Use Value: 2.2–3.6V operation aligns with PMIC rail scaling; 2.5 µA standby current prevents battery drain during idle sleep cycles.

Use Scenario: Holds ECG waveform history and calibration coefficients in battery-powered patient monitors requiring >72-hour runtime.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM backing flash-based firmware; retains critical settings during power-loss events.

Use Value: 1.5V data retention threshold ensures integrity during brown-out; VFBGA footprint minimizes board area in compact front-end modules.

Industrial Handheld Terminal

Automotive Infotainment Cache

Use Scenario: Caches barcode scan results and inventory database fragments in ruggedized warehouse scanners operating on single-cell Li-ion.

IC Role / Device Role / Timing Role: Low-latency working memory for ARM Cortex-M7 application core; accessed via parallel bus with no wait states.

Use Value: 55 ns t_RC supports 18.2 MHz polling loop; 15 mA active current limits thermal rise in sealed enclosures.

Use Scenario: Buffers navigation map tiles and voice recognition grammar in head-unit SoCs where power budget is constrained by CAN bus voltage drops.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory for DSP co-processor; survives automotive temperature cycling (–40°C to +85°C).

Use Value: Industrial-grade temp range and Pb-free VFBGA ensure AEC-Q200 alignment; CE-controlled power-down reduces system-level leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ISSI IS62WV1288BLL-55NLI	Same density (16 Mbit), 55 ns speed, but 2.7–3.6 V only; higher ISB (15 µA typ.) and no DNU pin constraints.	Lacks 2.2V support and automatic CE power-down; requires external power management for sub-3V battery operation.	Select when system VCC is stable ≥2.7V and board layout allows larger TSSOP-48; avoid for wide-VCC portable designs.
Renesas R1LV0216AS-55SI#U0	2.5–3.6 V range, 55 ns, 48-ball VFBGA; lower I_CC (12 mA typ.) but no data retention below 2.0 V.	Missing 1.5V data retention capability; unsuitable for brown-out recovery or backup-battery retention use cases.	Prefer for industrial control panels with regulated 3.3V rails; reject for medical or handheld devices needing extended low-VCC holdover.

Compared with IS62WV1288BLL-55NLI and R1LV0216AS-55SI#U0, the CY62168DV30LL-55BVXIT uniquely combines 2.2V operation, sub-3 µA standby, and 1.5V data retention-making it the only choice for true MoBL® battery longevity in unregulated portable systems.

Availability

CY62168DV30LL-55BVXIT is available at Aetrix Electronics and suitable for cellular handset design, portable medical instrumentation, industrial handheld terminals, and automotive infotainment systems requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62168DV30LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for embedded systems.

The MoBL® (More Battery Life) SRAM product line was engineered specifically for ultra-low-power portable electronics, emphasizing deep-sleep current reduction, wide-VCC tolerance, and robust data retention under dynamic battery conditions.

FAQ

What is the minimum V_CC required to retain data in CY62168DV30LL-55BVXIT?

The device guarantees data retention down to V_CC = 1.5 V across the full industrial temperature range (–40°C to +85°C). This is verified per datasheet Section "Data Retention Characteristics" and enables reliable operation during battery brown-out or backup-supply scenarios without external capacitors or supervisors.

How does automatic power-down activate, and what is its timing impact?

Automatic power-down engages when CE1 is driven HIGH or CE2 is driven LOW, reducing supply current to ≤22 µA within 55 ns (t_PD). No external control signals or clocks are needed-the transition is purely combinational and occurs independently of address or data activity.

Can CY62168DV30LL-55BVXIT be used with 1.8V I/O interfaces?

No. The device's input thresholds (VIH min = 1.8 V at 2.2–2.7 V V_CC) and output drive levels (VOH min = 2.0 V) require V_CC ≥ 2.2 V. Direct interfacing with 1.8V logic violates VIH/VIL specifications and risks metastability or bus contention.

Are the DNU pins mandatory to tie to ground, or can they float?

DNU pins (e.g., balls E2, F1, G1, H2, etc.) must either be left floating *or* tied to VSS-both options are explicitly permitted per datasheet Note 2. Floating is acceptable in controlled environments; grounding is preferred for ESD robustness and noise immunity in high-noise industrial layouts.

CY62168DV30LL-55BVXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 48-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 16Mbit

Memory Organization:: 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 2.2V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-VFBGA (8x9.5)

CY62168DV30LL-55BVXIT FAQ

1.How can I place an order for CY62168DV30LL-55BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62168DV30LL-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62168DV30LL-55BVXIT reliable?

The price and inventory of CY62168DV30LL-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62168DV30LL-55BVXIT is usually 5 days.

3.What payment methods are accepted for CY62168DV30LL-55BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62168DV30LL-55BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62168DV30LL-55BVXIT?

CY62168DV30LL-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62168DV30LL-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62168DV30LL-55BVXIT?

For technical support, including CY62168DV30LL-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62168DV30LL-55BVXIT requirements.

6.How does Aetrix verify that CY62168DV30LL-55BVXIT is sourced from the original manufacturer or authorized distributors?

All CY62168DV30LL-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62168DV30LL-55BVXIT meets industry standards.

7.What is the process for return or replacement of CY62168DV30LL-55BVXIT?

All CY62168DV30LL-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62168DV30LL-55BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62168DV30LL-55BVXIT part is unused and in its original packaging.

Return procedure for CY62168DV30LL-55BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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