Infineon Technologies CY62168EV30LL-45BVXI

Overview

CY62168EV30LL-45BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (2M × 8) CMOS static RAM with 45 ns access time, operating across 2.2 V–3.6 V supply, featuring ultra-low standby current (1.5 µA typical), automatic power-down on address inactivity, and high-impedance I/O control during deselect/write. It serves as main memory or buffer in battery-powered portable electronics requiring deterministic timing and low quiescent power.

For engineers reviewing the CY62168EV30LL-45BVXI datasheet, CY62168EV30LL-45BVXI pinout, CY62168EV30LL-45BVXI application, or CY62168EV30LL-45BVXI equivalent, key selection criteria include guaranteed 45 ns read access at 3.6 V, dual chip enable (CE1/CE2) for hierarchical memory mapping, MoBL®-optimized active/standby current trade-offs, and FBGA-48 package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive volatile memory array with full CMOS-compatible input/output signaling. Its dual CE architecture enables seamless integration into multi-chip memory systems-CE1 active-low and CE2 active-low allow independent gating of chip select logic, while OE and WE jointly define read/write cycles without bus contention.

The device uses automatic power-down to reduce ICC by >90% when address lines are static, and enters deep standby (<12 µA max ISB2) when CE1 is HIGH or CE2 is LOW. Data retention remains valid down to 1.5 V VCC, with tCDR = 0 ns and tR = 45 ns recovery, supporting rapid wake-from-sleep operation in energy-constrained embedded hosts.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV1288BLL-45NLI and R1LV0216R-45PB, CY62168EV30LL-45BVXI uniquely supports full 2.2–3.6 V operation with 12 µA max standby and hardware-triggered power-down-critical for battery longevity and firmware simplicity in portable medical and industrial edge devices.

Availability

CY62168EV30LL-45BVXI is available at Aetrix Electronics and suitable for wireless sensor nodes, medical wearables, industrial HMIs, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for CY62168EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

This device belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and energy-harvesting applications where extended battery runtime and deterministic low-voltage operation are mandatory design requirements.

FAQ

What is the minimum VCC required to retain data in CY62168EV30LL-45BVXI?

The device guarantees data retention down to 1.5 V VCC (VDR), with ICCDR ≤10 µA under those conditions. This allows memory state preservation during brown-out events or controlled power collapse without external backup capacitors-verified per datasheet Section "Data Retention Characteristics" and Figure 3 waveform.

How does the dual CE architecture improve system-level memory management?

CE1 and CE2 operate independently: asserting either CE1 HIGH or CE2 LOW fully deselects the device and triggers automatic power-down. This enables hierarchical memory decoding-e.g., CE1 driven by upper address bits for bank selection, CE2 by peripheral enable signals-reducing external logic and simplifying PCB routing.

Can CY62168EV30LL-45BVXI interface directly with 1.8 V logic systems?

No. The device requires VCC ≥2.2 V and specifies VIH min = 1.8 V only when VCC is between 2.2 V and 2.7 V. Direct connection to 1.8 V GPIO violates input voltage thresholds; level-shifting circuitry is mandatory for interoperability with 1.8 V controllers or FPGAs.

What thermal performance can be expected in a standard 4-layer PCB layout?

In a 3 × 4.5 inch, four-layer board with still air, the FBGA-48 package delivers ΘJA = 31.5 °C/W and ΘJC = 15.75 °C/W. At 35 mA max ICC and 3.6 V, junction temperature rise stays below 40 °C above ambient-well within the –40 °C to +85 °C industrial operating range without forced airflow.