Infineon Technologies CY62168EV30LL-45BVXIT

Overview

CY62168EV30LL-45BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (2M × 8) CMOS static RAM with 45 ns access time, operating across 2.2 V–3.6 V supply, featuring ultra-low standby current (1.5 µA typ), automatic power-down on address inactivity, and high-impedance I/O control during deselect/write. It serves as main working memory in battery-powered portable electronics requiring deterministic timing and low quiescent power.

For engineers reviewing the CY62168EV30LL-45BVXIT datasheet, CY62168EV30LL-45BVXIT pinout, CY62168EV30LL-45BVXIT application, or CY62168EV30LL-45BVXIT equivalent, key selection criteria include guaranteed 45 ns read/write timing at 3.6 V, dual chip enable (CE1/CE2) logic for hierarchical memory mapping, MoBL®-optimized active/standby current trade-offs, and FBGA-48 package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive volatile memory array with full CMOS input/output buffers and dual independent chip enable inputs (CE1 active-low, CE2 active-high) enabling flexible bank selection and automatic power-down when either CE signal places the device in deselected state. Address lines A0–A20 decode 2M locations; I/O0–I/O7 provide bidirectional 8-bit data path with three-state control governed by CE1, CE2, OE, and WE.

Power management relies on hardware-level detection of address bus stability: when no address transition occurs for >1 cycle, internal logic triggers automatic power-down mode reducing ICC to ISB1/ISB2 levels. Data retention is supported down to 1.5 V with ICCDR ≤10 µA, and recovery time tR is fixed at 45 ns after VCC stabilization.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV1288BLL-45NLI and R1LV0216ASBG-45D1, CY62168EV30LL-45BVXIT uniquely combines 2.2 V operation, dual CE architecture, and hardware-triggered power-down-making it optimal for portable systems where voltage headroom, memory mapping flexibility, and autonomous power gating are jointly critical.

Availability

CY62168EV30LL-45BVXIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial telematics modules, wearables with OLED displays, and smart meter data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62168EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, security ICs, and memory solutions.

CY62168EV30LL belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and energy-constrained embedded systems where runtime, voltage flexibility, and deterministic timing are non-negotiable.

FAQ

What is the minimum VCC required to retain data in CY62168EV30LL-45BVXIT?

The device guarantees data retention down to VCC = 1.5 V, with maximum data retention current (ICCDR) of 10 µA under those conditions. This allows safe hibernation during brown-out events without external backup capacitors, provided CE1 and CE2 are held in deselected states and all inputs remain within valid voltage ranges.

Does CY62168EV30LL-45BVXIT support true asynchronous operation?

Yes-it operates asynchronously with no clock input required. All timing is referenced to CE1, CE2, OE, and WE transitions. The 45 ns access time (tAA) is measured from the latest qualifying edge of CE1/CE2/OE to valid data on I/O pins, and write setup/hold times are defined relative to WE and CE edges per the datasheet truth table.

Can NC pins on the 48-ball FBGA be grounded or left floating?

NC pins must be left electrically floating per Infineon's design guidance. Grounding them may cause unintended current paths or violate internal ESD protection structures. The datasheet explicitly states "NC pins are not connected on the die," and recommended PCB layout isolates these balls with non-plated through-holes or keep-out zones.

How does automatic power-down activate, and does it require firmware control?

Automatic power-down activates autonomously when the address bus remains stable for one full cycle-no firmware or external signal needed. Internal circuitry detects lack of address transitions and reduces ICC by >90% within nanoseconds. This feature is always enabled and cannot be disabled; it operates transparently alongside normal read/write operations.