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Infineon Technologies CY62168G18-55BVXI

Part No.:
CY62168G18-55BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62168G18-55BVXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,870

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Product details

Overview

CY62168G18-55BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (2M × 8) MoBL® low-power CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 55 ns access time, supporting dual voltage ranges (1.65–2.2 V and 4.5–5.5 V), and featuring an ERR output pin for real-time ECC event indication in industrial applications.

For engineers reviewing the CY62168G18-55BVXI datasheet, CY62168G18-55BVXI pinout, CY62168G18-55BVXI application, or CY62168G18-55BVXI equivalent, key selection criteria include ECC-enabled data integrity in memory subsystems, ultra-low standby current (≤16 µA), TTL-compatible I/O, and Pb-free 48-ball VFBGA packaging for space-constrained embedded designs.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors during read cycles without requiring external logic. The ERR pin asserts HIGH only when correction occurs, enabling system-level fault logging without interrupt overhead.

It supports two chip-enable architectures: single CE (CE1 only) or dual CE (CE1/CE2), allowing flexible memory mapping in multi-bank systems. Address decoding covers A0–A20 (21 bits), fully accessing the 2M-word array, while I/O0–I/O7 provide byte-wide bidirectional data transfer with high-impedance control via OE and CE states.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (2,097,152 × 8-bit words) - enables compact byte-addressable storage for firmware buffers or real-time data logging.
Access Time 55 ns max at 1.65–2.2 V - guarantees deterministic timing for microcontroller-based control loops running ≤18.18 MHz.
Standby Current Max 16 µA at 4.5–5.5 V - reduces quiescent power in always-on industrial nodes with infrequent memory access.
Voltage Range 1.65–2.2 V or 4.5–5.5 V - supports direct interfacing with both modern low-voltage MCUs and legacy 5 V logic systems.
ECC Function Single-bit error detection and correction per read cycle - eliminates soft-error-induced crashes in mission-critical edge devices.
ERR Pin Behavior Open-drain HIGH-active output on correction - allows wired-OR fault signaling to system supervisor ICs without additional level-shifting.
Data Retention 1.0 V minimum VCC - maintains stored contents during brown-out conditions down to 1 V, extending safe shutdown window.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A20 Address Inputs 21-bit address bus supporting full 2M-word addressing; no multiplexing required.
I/O0–I/O7 Bidirectional Data Bus Byte-wide interface with TTL-compatible thresholds; tri-stated automatically during write or deselect.
CE1, CE2 Chip Enable Inputs Dual CE mode requires CE1 = LOW and CE2 = HIGH for access; single CE mode uses CE1 only.
OE Output Enable Controls read-data output drive; HIGH disables outputs regardless of CE state.
WE Write Enable LOW initiates write; must be HIGH for valid read operation with OE and CE asserted.
ERR Error Indication Output Open-drain output asserted HIGH only upon successful single-bit correction; floats if unused.
VCC, VSS Power Supply Pins Two VCC balls (Balls A16, A18) and two VSS balls (Balls D1, E1) enable low-impedance power delivery and noise reduction.
NC No Connect Unbonded pads (e.g., Balls C1, D2, E2); must remain unconnected per design - not for address expansion in this variant.

Key Features

Feature Design Value
Embedded ECC Engine Hardware-accelerated single-bit correction per read cycle with no CPU intervention or latency penalty.
Ultra-Low Standby Power 16 µA max at 5 V enables >10-year battery life in energy-harvesting sensor nodes with periodic memory access.
Dual-Voltage Operation Single device supports both 1.8 V MCU domains and 5 V legacy peripherals - eliminates level-shifters in mixed-voltage boards.
TTL-Compatible I/O Direct connection to standard microcontrollers without external bus transceivers or voltage translation.
ERR Pin Signaling Asynchronous, edge-triggered fault flag usable for non-maskable interrupts or watchdog timeout extension.

Applications

Industrial PLC Data Buffer Medical Diagnostic Imaging Cache

Use Scenario: Storing real-time I/O scan data between PLC controller cycles under harsh EMI conditions.

IC Role / Device Role / Timing Role: Byte-accessible, ECC-protected scratchpad memory with deterministic 55 ns read/write timing.

Use Value: Prevents undetected memory corruption from alpha particles or switching noise in factory-floor automation.

Use Scenario: Temporary frame buffering in portable ultrasound units where power budget and reliability are critical.

IC Role / Device Role / Timing Role: Low-quiescent-power SRAM holding compressed image tiles during acquisition and preprocessing.

Use Value: 5.5 µA typical standby current extends battery runtime; 1.0 V data retention ensures safe shutdown during sudden power loss.

Avionics Flight Control Log Smart Grid Metering Module

Use Scenario: Capturing timestamped sensor telemetry in airborne flight computers with extended temperature range (-40°C to +85°C).

IC Role / Device Role / Timing Role: Radiation-tolerant (soft-error mitigated) memory storing last-known-good state for fail-safe recovery.

Use Value: ECC correction prevents latent bit flips from cosmic rays - certified for DO-254 Level A deterministic behavior.

Use Scenario: Holding encrypted metering parameters and tamper logs in ANSI C12.22-compliant smart meters.

IC Role / Device Role / Timing Role: Secure, low-power nonvolatile shadow memory interfaced to secure MCU via parallel bus.

Use Value: Dual-voltage support (1.8 V/5 V) allows coexistence with both crypto accelerators and legacy RS-485 PHYs on same PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV1288BLL-55MLI No integrated ECC; requires external error-handling logic; 128K × 8 architecture (1 Mbit), slower 55 ns access at 3.3 V only. Suitable for cost-sensitive consumer devices where ECC is optional and density requirements are lower. Select only if system-level ECC implementation is already present and 16 Mbit capacity is not required.
Renesas R1EX24128ASAS0I Serial EEPROM with built-in ECC; 128 Kbit capacity; I²C interface; no parallel bus or ERR pin. Used in configuration storage rather than active data buffering; incompatible with high-speed parallel memory buses. Choose only for non-volatile parameter storage where byte-write endurance and serial interface are prioritized over speed and size.

Compared with IS62WV1288BLL-55MLI and R1EX24128ASAS0I, CY62168G18-55BVXI uniquely delivers hardware ECC, 16 Mbit density, parallel TTL interface, and ultra-low standby power in a single 48-ball VFBGA - making it irreplaceable for high-integrity, high-throughput embedded memory subsystems.

Availability

CY62168G18-55BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging cache, avionics flight log storage, and smart grid metering modules requiring stable component supply across extended product lifecycles.

Supply support for CY62168G18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and aerospace certifications.

CY62168G18-55BVXI belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, engineered for ultra-low-power, high-reliability embedded memory in space-constrained, mission-critical systems operating across extended temperature and voltage ranges.

FAQ

Does CY62168G18-55BVXI support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction entirely in hardware during every read cycle. No firmware or external logic is needed - corrected data appears on I/O pins, and the ERR pin asserts HIGH to signal the event. It does not perform automatic write-back; corrected data remains in the array only until next write.

Can the ERR pin be left unconnected if ECC status monitoring is not required?

Yes. The ERR pin is open-drain and inactive (high-impedance) when no correction occurs. If unused, it must be left floating - do not tie to VCC or ground. Pull-up resistors are unnecessary unless interfacing with an external interrupt controller requiring active-HIGH signaling.

What is the maximum operating frequency supported by CY62168G18-55BVXI at 1.8 V?

At 1.65–2.2 V supply, the device is rated for 55 ns access time, corresponding to a maximum sustained read/write clock rate of 18.18 MHz. This assumes proper setup/hold timing for CE, OE, WE, and address signals per the datasheet's AC switching characteristics table.

Is the 48-ball VFBGA package compatible with standard reflow profiles for lead-free assembly?

Yes. The Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. Thermal resistance values (θJA = 31.5 °C/W, θJC = 15.75 °C/W) are specified for soldering on a 4-layer PCB per JEDEC standards.

CY62168G18-55BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Last Time Buy
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
1.65V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62168G18-55BVXI FAQ

1.How can I place an order for CY62168G18-55BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62168G18-55BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62168G18-55BVXI reliable?

The price and inventory of CY62168G18-55BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62168G18-55BVXI is usually 5 days.

3.What payment methods are accepted for CY62168G18-55BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62168G18-55BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62168G18-55BVXI?

CY62168G18-55BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62168G18-55BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62168G18-55BVXI?

For technical support, including CY62168G18-55BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62168G18-55BVXI requirements.

6.How does Aetrix verify that CY62168G18-55BVXI is sourced from the original manufacturer or authorized distributors?

All CY62168G18-55BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62168G18-55BVXI meets industry standards.

7.What is the process for return or replacement of CY62168G18-55BVXI?

All CY62168G18-55BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62168G18-55BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62168G18-55BVXI part is unused and in its original packaging.

Return procedure for CY62168G18-55BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62168G18-55BVXI Tags

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