Infineon Technologies CY62168G18-55BVXIT

Overview

CY62168G18-55BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 2M × 8 bits, operating at 55 ns access time across 1.65–2.2 V or 4.5–5.5 V supply rails, and featuring ultra-low standby current (max 16 µA) for battery-backed industrial memory applications.

For engineers reviewing the CY62168G18-55BVXIT datasheet, CY62168G18-55BVXIT pinout, CY62168G18-55BVXIT application, or CY62168G18-55BVXIT equivalent, key selection criteria include ECC-enabled data integrity in harsh environments, dual-voltage support for legacy and low-power systems, TTL-compatible I/O, and ERR pin assertion for real-time error detection during read cycles.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on-the-fly during read operations without requiring external logic or software intervention. The ERR output pin asserts HIGH only when correction occurs, enabling system-level fault logging.

It supports both single CE (CE1-only) and dual CE (CE1/CE2) addressing modes, with configurable chip enable logic determining active access conditions. Standby power management uses automatic power-down triggered by CE deassertion or invalid CE1/CE2 states, validated across industrial temperature (–40°C to +85°C) and dual voltage ranges.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV1288BLL-55MLI and MT48LC16M8A2P-6A:G, CY62168G18-55BVXIT delivers verified hardware ECC correction, deterministic ERR signaling, and true asynchronous SRAM timing-enabling simpler, safer, and more robust implementations in mission-critical memory buffering.

Availability

CY62168G18-55BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory backup, medical diagnostic data buffering, and avionics flight recorder applications requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62168G18-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

CY62168G18-55BVXIT belongs to the MoBL® (Mobile Bitline) SRAM product line, designed specifically for ultra-low-power, high-reliability memory in battery-constrained and safety-critical embedded systems.

FAQ

Does CY62168G18-55BVXIT support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction entirely in hardware during each read cycle. When an error is found and corrected, the ERR pin asserts HIGH. No host processor action, firmware routine, or external logic is required for correction-only optional logging or alert response based on ERR state.

What is the function of the NC pins in the 48-ball VFBGA package?

The NC (No Connect) pins are physically present but not bonded to the silicon die. They serve as placeholders for potential future higher-density variants and must remain unconnected in this device. Connecting them risks undefined behavior or damage, as confirmed in the official Infineon datasheet section "Pin Configurations".

Can CY62168G18-55BVXIT operate reliably at 1.65 V while maintaining 55 ns access time?

Yes. The 55 ns maximum access time is fully specified and tested over the entire 1.65–2.2 V range at –40°C to +85°C. At 1.65 V, the device meets all timing parameters including tAA, tOEH, and tOE, as validated in Table "Switching Characteristics" of Rev. *K datasheet.

Is the ERR pin actively driven or open-drain, and how should it be terminated?

The ERR pin is open-drain. It requires an external pull-up resistor to VCC (1.65–2.2 V or 4.5–5.5 V) to generate a valid HIGH logic level when an error is corrected. Typical values range from 4.7 kΩ to 10 kΩ; the datasheet specifies no internal pull-up and warns against leaving ERR floating in operational systems.