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Infineon Technologies CY62168G30-45BVXI
- Part No.:
- CY62168G30-45BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62168G30-45BVXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,840
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Product details
Overview
CY62168G30-45BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 2M × 8 bits, operating at 45 ns access time across 4.5–5.5 V supply, and featuring ultra-low standby current (5.5 µA typical) for battery-backed memory systems in industrial controllers and medical data loggers.
For engineers reviewing the CY62168G30-45BVXI datasheet, CY62168G30-45BVXI pinout, CY62168G30-45BVXI application, or CY62168G30-45BVXI equivalent, key selection criteria include ECC-enabled reliability, dual-voltage support (1.65–2.2 V / 4.5–5.5 V), ERR output signaling, VFBGA-48 package compatibility, and TTL-compatible I/O timing behavior under industrial temperature range (–40 °C to +85 °C).
Technical Context
This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors during read cycles without requiring external logic. The ERR pin asserts HIGH only when a correctable error is found and corrected - no automatic write-back occurs.
It supports two chip-enable architectures: single CE (CE1 only) or dual CE (CE1 LOW + CE2 HIGH), enabling flexible memory mapping in multi-bank systems. Address decoding covers A0–A20 (21 bits), supporting full 2M-word addressing with eight bidirectional I/O lines (I/O0–I/O7) and standard control signals (WE, OE, CE1, CE2).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (2,097,152 × 8 bits) - supports byte-wide data paths in microcontroller-based systems without external data-width conversion. |
| Access Time | 45 ns at 4.5–5.5 V - enables direct interfacing with legacy 22 MHz bus clocks without wait states. |
| Standby Current | 5.5 µA typical / 16 µA max at 4.5–5.5 V - sustains >1-year battery life in always-on backup memory applications. |
| ECC Function | Single-bit error detection and correction per read cycle - improves system-level data integrity without software overhead. |
| Supply Voltage Range | 4.5 V to 5.5 V (primary); also supports 1.65 V to 2.2 V - allows operation in both 5 V legacy and low-power 1.8 V domains. |
| Data Retention | 1.0 V minimum retention voltage - maintains stored contents during brown-out conditions down to critical rail levels. |
| Operating Temperature | –40 °C to +85 °C (Industrial grade) - qualified for deployment in factory automation and outdoor telemetry equipment. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word addressing; no internal address multiplexing required. |
| I/O0–I/O7 | Bidirectional Data Lines | CMOS-compatible 8-bit data interface; high-impedance state asserted during deselect, OE HIGH, or write cycles. |
| CE1, CE2 | Chip Enable Inputs | Dual CE mode requires CE1 = LOW and CE2 = HIGH for access; single CE mode uses CE1 only (CE2 tied HIGH). |
| WE | Write Enable Input | Active-LOW write strobe; initiates write when CE1 = LOW, CE2 = HIGH, and WE = LOW. |
| OE | Output Enable Input | Active-LOW control for output drivers; disables outputs (high-Z) when HIGH, independent of CE state. |
| ERR | Error Indication Output | Open-drain HIGH-active signal indicating successful single-bit correction occurred on last read; floats if unused. |
| VCC, VSS | Power Supply Pins | Two VCC balls and two VSS balls provide low-inductance power distribution for noise-sensitive SRAM core and I/O. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | Hardware-accelerated single-bit error correction per read cycle eliminates need for external ECC logic or firmware intervention. |
| Ultra-Low Standby Power | 5.5 µA typical ISB2 at 5 V enables >1-year operation on coin-cell batteries in maintenance-free data logging systems. |
| Dual-Voltage Operation | Supports both 5 V legacy systems and 1.8 V low-power domains - reduces need for level-shifting in mixed-supply designs. |
| TTL-Compatible I/O | VIH/VIL thresholds match standard TTL logic families - simplifies integration with older microcontrollers and FPGAs. |
| ERR Pin Signaling | Dedicated open-drain output provides immediate hardware notification of corrected errors - enables real-time fault logging without polling. |
Applications
| Medical Data Logger | Industrial PLC Memory Module |
|---|---|
|
Use Scenario: Continuous acquisition and storage of patient vital signs with long-term battery backup. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer with ECC protection for RAM-based circular buffers retaining up to 72 hours of waveform history. Use Value: Prevents silent data corruption in stored ECG waveforms by correcting bit flips induced by cosmic radiation or power transients. |
Use Scenario: Storing ladder logic state variables and I/O image tables in programmable logic controllers deployed in factory environments. IC Role / Device Role / Timing Role: Fast-access, error-resilient working memory mapped directly to CPU address space with deterministic 45 ns read latency. Use Value: Ensures deterministic scan-cycle execution by eliminating uncorrectable memory errors that could cause spurious safety shutdowns. |
| Avionics Black Box Recorder | Smart Meter Firmware Cache |
|
Use Scenario: Crash-protected flight data recording where memory integrity must survive extreme thermal and vibration stress. IC Role / Device Role / Timing Role: High-reliability SRAM used in conjunction with FRAM or flash for critical parameter snapshots during emergency events. Use Value: Maintains data fidelity over 10,000+ thermal cycles via ECC correction and 1.0 V data retention capability during brown-outs. |
Use Scenario: Caching firmware update payloads and configuration parameters in utility-grade electricity meters with 15+ year field life. IC Role / Device Role / Timing Role: Low-power SRAM holding decrypted firmware segments during secure boot verification and patch application. Use Value: Reduces flash wear by offloading volatile runtime code segments while preventing corruption-induced boot failures via ECC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV1288BLL-45NLI | No integrated ECC; requires external error-checking logic or software overhead; 128K × 8 organization (1 Mbit); 45 ns access at 3.3 V only. | Suitable for cost-sensitive designs where ECC is implemented in firmware or not required; lacks ERR pin and dual-voltage support. | Select when ECC is optional and system already implements CRC or checksum validation in host processor. |
| Micron MT48LC16M8A2P-6A:G | SDRAM (not SRAM); requires refresh controller; no ECC; 16M × 8 organization but synchronous interface; 166 MHz clocked operation. | Used in high-throughput buffering (e.g., video frame stores); incompatible pinout and timing model; no direct replacement. | Choose only when migrating to synchronous DRAM architecture with dedicated memory controller support. |
Compared with IS62WV1288BLL-45NLI and MT48LC16M8A2P-6A:G, CY62168G30-45BVXI delivers hardware ECC, dual-voltage operation, and asynchronous SRAM simplicity - making it uniquely suited for safety-critical, battery-powered, or legacy 5 V system upgrades where deterministic timing and error resilience are mandatory.
Availability
CY62168G30-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory modules, medical data loggers, avionics black box recorders, and smart meter firmware caches requiring stable component supply across extended product lifecycles.
Supply support for CY62168G30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions derived from its acquisition of Cypress Semiconductor.
CY62168G30-45BVXI belongs to the MoBL® (Mobile Bitline) SRAM product line, designed specifically for ultra-low-power, high-reliability embedded memory applications demanding ECC protection and extended battery life in harsh environments.
FAQ
Does CY62168G30-45BVXI support automatic error correction write-back?
No. The device performs single-bit error correction during read operations and signals the event via the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Host firmware or external logic must handle any desired write-back action if persistent correction is required.
Can CY62168G30-45BVXI operate at 3.3 V?
No. The device is specified only for 1.65–2.2 V and 4.5–5.5 V supply ranges. Operation at 3.3 V is outside guaranteed specifications and may result in undefined behavior, increased standby current, or failure to meet 45 ns timing.
What is the function of NC pins in the VFBGA package?
NC (No Connect) pins are not bonded to the die and serve no electrical function. They are reserved for future pin expansion or mechanical alignment in higher-density variants; they must remain unconnected and should not be tied to VCC, VSS, or signals.
Is the ERR pin actively driven or open-drain?
The ERR pin is open-drain. When an error is detected and corrected, it pulls HIGH through an external pull-up resistor. If unused, it must be left floating - connecting it directly to VCC or GND will impair functionality.
CY62168G30-45BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62168G30-45BVXI FAQ
1.How can I place an order for CY62168G30-45BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62168G30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62168G30-45BVXI reliable?
The price and inventory of CY62168G30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62168G30-45BVXI is usually 5 days.
3.What payment methods are accepted for CY62168G30-45BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62168G30-45BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62168G30-45BVXI?
CY62168G30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62168G30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62168G30-45BVXI?
For technical support, including CY62168G30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62168G30-45BVXI requirements.
6.How does Aetrix verify that CY62168G30-45BVXI is sourced from the original manufacturer or authorized distributors?
All CY62168G30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62168G30-45BVXI meets industry standards.
7.What is the process for return or replacement of CY62168G30-45BVXI?
All CY62168G30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62168G30-45BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62168G30-45BVXI part is unused and in its original packaging.
Return procedure for CY62168G30-45BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62168G30-45BVXI Tags
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