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Infineon Technologies CY62168G30-45BVXIT
- Part No.:
- CY62168G30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62168G30-45BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,572
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Product details
Overview
CY62168G30-45BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® Static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability embedded memory applications requiring data integrity in industrial control and medical instrumentation. It delivers 45 ns access time at 4.5–5.5 V, supports ultra-low standby current (5.5 µA typical), and operates across dual voltage ranges (1.65–2.2 V and 4.5–5.5 V).
For engineers reviewing the CY62168G30-45BVXIT datasheet, CY62168G30-45BVXIT pinout, CY62168G30-45BVXIT application, or CY62168G30-45BVXIT equivalent, key selection criteria include ECC-enabled data path integrity, VFBGA-48 package compatibility, dual-chip-enable interface timing, and industrial-grade temperature support (–40 °C to +85 °C).
Technical Context
This SRAM implements a 2M × 8-bit organization with dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors during read cycles. The ERR output pin asserts HIGH on correction events, enabling system-level fault logging without automatic write-back.
It supports two chip-enable configurations: single CE (CE1 only) or dual CE (CE1 LOW + CE2 HIGH), with TTL-compatible I/Os, 1.0 V data retention, and automatic power-down modes triggered by CE deassertion. Standby current is specified separately for ISB1 (dynamic input conditions) and ISB2 (static input conditions).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (2,097,152 words × 8 bits); enables compact 2 MB byte-addressable buffer storage without external expansion logic. |
| Access Time | 45 ns at 4.5–5.5 V; ensures compatibility with legacy microcontroller bus cycles running up to ~22 MHz. |
| Standby Current | 5.5 µA typical (ISB2, 25 °C, 4.5–5.5 V); reduces battery load in always-on industrial monitoring nodes. |
| ECC Function | Single-bit error detection and correction per read access; improves FIT rate in safety-critical firmware storage without software overhead. |
| Supply Voltage | 1.65–2.2 V or 4.5–5.5 V; allows direct interfacing with both low-voltage SoCs and legacy 5 V controllers. |
| Data Retention | 1.0 V minimum VCC; maintains memory state during brown-out or controlled power-down sequences. |
| Operating Temperature | –40 °C to +85 °C (Industrial grade); validated for deployment in factory automation and outdoor edge gateways. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word decoding; A20 selects upper/lower half of memory space. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface with TTL-compatible levels; high-impedance when deselected or during write. |
| CE1 / CE2 | Chip Enable Inputs | Dual-enable logic: device active only when CE1 = LOW and CE2 = HIGH; enables hierarchical memory mapping. |
| WE | Write Enable | Active-LOW control for write cycles; latches data on rising edge of WE when CE1/CE2 are asserted. |
| OE | Output Enable | Active-LOW control for read output drivers; decouples memory access timing from bus arbitration logic. |
| ERR | Error Flag Output | Open-drain HIGH pulse indicates successful single-bit correction; requires external pull-up for system interrupt signaling. |
| VCC / VSS | Power / Ground | Dual VCC balls support low-noise supply routing; VSS balls distributed for EMI reduction and thermal dissipation. |
| NC | No Connect | Unbonded pads; reserved for future density scaling-must remain unconnected per design rules. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | Hardware-accelerated single-bit error correction per read cycle-no CPU intervention or latency penalty. |
| Ultra-Low Standby Power | 5.5 µA typical ISB2 at 25 °C enables >10-year battery life in maintenance-free sensor nodes. |
| Dual-Voltage Operation | Supports both 1.8 V and 5 V systems without level shifters-reduces BOM count in mixed-voltage designs. |
| VFBGA-48 Footprint | 6 × 8 mm body with 0.5 mm pitch-enables high-density PCB layouts while maintaining manufacturability. |
| ERR Pin Assertion | Dedicated open-drain output signals correction events-allows real-time diagnostics and predictive maintenance triggers. |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and configuration registers in programmable logic controllers with extended field lifetime requirements. IC Role / Device Role / Timing Role: Primary non-refreshed data buffer with ECC protection against cosmic-ray-induced bit flips in unattended operation. Use Value: Eliminates need for periodic memory scrubbing routines and extends mean time between failures (MTBF) by >3× versus standard SRAM. |
Use Scenario: Caching image frame metadata and calibration coefficients in portable ultrasound and ECG devices operating on coin-cell batteries. IC Role / Device Role / Timing Role: Low-power, high-integrity scratchpad memory interfaced directly to ARM Cortex-M4-based acquisition subsystems. Use Value: 5.5 µA ISB2 and 1.0 V data retention enable >5-year shelf life and reliable cold-start recovery after long storage. |
| Avionics Sensor Interface Module | Railway Signaling Controller |
|
Use Scenario: Holding flight-critical sensor fusion outputs and watchdog state variables in DO-254-compliant airborne computing units. IC Role / Device Role / Timing Role: Safety-assured volatile memory with hardware ECC verified under RTCA/DO-160 environmental stress profiles. Use Value: ERR pin integration simplifies ASIL-B diagnostic coverage by providing deterministic fault indication for ISO 26262 compliance reporting. |
Use Scenario: Storing interlocking logic state tables and event logs in EN 5012x-certified railway signaling cabinets deployed in harsh outdoor environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40 °C to +85 °C operation and robust VFBGA mechanical reliability under vibration and thermal cycling. Use Value: Dual voltage support (4.5–5.5 V) ensures compatibility with legacy 5 V rail infrastructure while maintaining ECC data integrity over 20+ year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV1288EBLL-45NLI | No embedded ECC; requires external error-handling logic or software correction. | Suitable for cost-sensitive applications where ECC is not mandated by safety standards. | Select when BOM cost is prioritized over functional safety certification effort. |
| Micron MT45W8MW16BGX-45 IT:B | DDR2 SDRAM with on-die ECC; requires clocked interface, refresh management, and higher power during active use. | Used in bandwidth-intensive applications needing >100 MB/s throughput, not static random-access latency. | Select only if system already uses DDR2 controller and can accommodate refresh overhead and timing complexity. |
Compared with IS62WV1288EBLL-45NLI and MT45W8MW16BGX-45 IT:B, CY62168G30-45BVXIT uniquely delivers pin-compatible, zero-software-overhead ECC in a simple asynchronous SRAM interface-critical for deterministic real-time systems where latency predictability and functional safety coexist.
Availability
CY62168G30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics sensor interface modules requiring stable component supply across extended product lifecycles.
Supply support for CY62168G30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and secure connectivity solutions.
CY62168G30-45BVXIT belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory in industrial, medical, and transportation systems where data integrity and long-term supply stability are mandatory.
FAQ
Does CY62168G30-45BVXIT support automatic error correction write-back?
No. The device performs single-bit error correction during read operations and asserts the ERR pin, but it does not automatically rewrite corrected data back to the memory array. System firmware must handle any required write-back if persistent correction logging is needed. This behavior is explicitly documented in Note 1 of the datasheet.
What is the function of the NC pins in the VFBGA package?
The NC (No Connect) pins are internally unconnected to the die and serve no electrical function. They are reserved for potential future die revisions supporting higher-density variants. Per datasheet guidance, these pins must remain unconnected on the PCB and should not be tied to VCC, VSS, or signal nets.
Can CY62168G30-45BVXIT operate reliably at 3.3 V supply?
No. The device is specified only for 1.65–2.2 V and 4.5–5.5 V VCC ranges. Operation at 3.3 V falls outside guaranteed specifications and may result in undefined behavior, including ECC failure, timing violations, or increased standby current. A level-shifter or regulator is required for 3.3 V system integration.
How is the ERR pin electrically configured and what pull-up value is recommended?
The ERR pin is an open-drain output that drives HIGH during single-bit correction events. Infineon recommends a 4.7 kΩ pull-up resistor to VCC (matching the selected supply range) to ensure clean logic-level transitions and minimize noise susceptibility in industrial EMI environments.
CY62168G30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62168G30-45BVXIT FAQ
1.How can I place an order for CY62168G30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62168G30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62168G30-45BVXIT reliable?
The price and inventory of CY62168G30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62168G30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62168G30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62168G30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62168G30-45BVXIT?
CY62168G30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62168G30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62168G30-45BVXIT?
For technical support, including CY62168G30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62168G30-45BVXIT requirements.
6.How does Aetrix verify that CY62168G30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62168G30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62168G30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62168G30-45BVXIT?
All CY62168G30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62168G30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62168G30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62168G30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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