Infineon Technologies CY62168GE30-45BVXI

Overview

CY62168GE30-45BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configured as 2M × 8 bits, operating at 45 ns access time across 1.65–2.2 V or 4.5–5.5 V supply rails, and featuring an active-HIGH ERR pin for real-time ECC event indication. It targets high-reliability embedded systems requiring data integrity in industrial control, medical instrumentation, and avionics memory buffers.

For engineers reviewing the CY62168GE30-45BVXI datasheet, CY62168GE30-45BVXI pinout, CY62168GE30-45BVXI application, or CY62168GE30-45BVXI equivalent, key selection criteria include its dual-voltage support, ultra-low 5.5 µA typical standby current, TTL-compatible I/O, 48-ball VFBGA package, and dedicated ERR output signaling single-bit correction events without automatic write-back.

Technical Context

The device implements a full CMOS SRAM core with integrated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle. Its dual chip-enable architecture (CE1/CE2) enables flexible memory mapping and power gating, while the ERR pin provides asynchronous status reporting independent of bus timing.

It supports two distinct voltage domains: low-voltage operation (1.65–2.2 V) optimized for portable and battery-backed systems, and legacy 5 V compatibility (4.5–5.5 V) for industrial backplanes. Data retention is guaranteed down to 1.0 V, and all inputs/outputs meet TTL voltage thresholds across both ranges.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV102416BLL-10MLI and MT48LC16M16A2P-6A:G, CY62168GE30-45BVXI delivers hardware ECC with zero software overhead, operates across dual voltage domains, and guarantees data retention at 1.0 V-making it uniquely suited for safety-critical, low-power, and mixed-rail embedded systems.

Availability

CY62168GE30-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic imaging caches, and avionics flight data recorders requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62168GE30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial-grade performance.

CY62168GE30-45BVXI belongs to the MoBL® (Mobile Low-Power) SRAM product line, designed specifically for battery-constrained and mission-critical embedded systems demanding ultra-low standby power, wide voltage operation, and hardware-based data integrity assurance.

FAQ

Does CY62168GE30-45BVXI support automatic write-back after ECC correction?

No. The device signals single-bit correction via the ERR pin but does not perform automatic write-back to the memory array. The corrected data appears on the I/O bus during the read cycle, and any persistent correction requires external logic or software to initiate a subsequent write operation with the corrected value.

Can the ERR pin be left unconnected if ECC functionality is not used?

Yes. The ERR pin is an open-drain output and may be left floating if error indication is not required. It is not internally terminated, and no pull-up or pull-down resistor is needed unless the system uses the signal for fault logging or interrupt generation.

What is the maximum junction temperature for continuous operation in the 48-ball VFBGA package?

The maximum junction temperature is +125 °C, consistent with the industrial-grade operating range. With a θJA of 31.5 °C/W and typical power dissipation of 36 mA at 5 V, sustained operation at ambient up to +85 °C remains within thermal limits when using standard four-layer PCB layout practices.

How does the dual chip-enable (CE1/CE2) architecture improve system-level power management?

CE1 and CE2 allow hierarchical enable control: asserting CE1 HIGH or CE2 LOW forces automatic power-down mode, reducing current to ≤16 µA. This enables fine-grained memory partitioning-e.g., disabling unused peripheral buffers while keeping core control RAM active-without requiring additional power switches or regulators.