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Infineon Technologies CY62168GE30-45BVXIT
- Part No.:
- CY62168GE30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62168GE30-45BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,515
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Product details
Overview
CY62168GE30-45BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® Static RAM with embedded single-bit error-correcting code (ECC), organized as 2M × 8 bits, operating at 45 ns access time across 1.65–2.2 V or 4.5–5.5 V supply rails, featuring an ERR output pin for real-time ECC event indication and ultra-low standby current down to 5.5 µA - deployed in industrial memory subsystems requiring data integrity in power-constrained edge controllers.
For engineers reviewing the CY62168GE30-45BVXIT datasheet, CY62168GE30-45BVXIT pinout, CY62168GE30-45BVXIT application, or CY62168GE30-45BVXIT equivalent, key selection criteria include dual-voltage support, ECC-enabled reliability, VFBGA-48 package compatibility, and ERR pin behavior during read-cycle correction events.
Technical Context
The device implements a full CMOS SRAM core with integrated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle without automatic write-back. Its dual chip-enable architecture (CE1/CE2) supports flexible memory mapping and low-power deselection control.
It operates across two independent voltage domains: 1.65–2.2 V for low-power embedded systems and 4.5–5.5 V for legacy industrial interfaces, with TTL-compatible I/Os, 1.0 V data retention, and dedicated ERR pin assertion (HIGH) upon successful single-bit correction - confirmed in functional truth tables and logic block diagrams.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (2,097,152 × 8 bits) - supports byte-wide data buses in microcontroller co-processor or FPGA buffer applications. |
| Access Time | 45 ns at 4.5–5.5 V - enables direct interface with 22.22 MHz bus clocks without wait states in legacy industrial controllers. |
| Standby Current | 5.5 µA typical / 16 µA max at 5 V - sustains multi-year battery-backed operation in remote sensor nodes. |
| ECC Function | Single-bit error detection and correction per read cycle - ensures data integrity in radiation-prone or aging-memory environments without software overhead. |
| Supply Voltage Ranges | 1.65–2.2 V and 4.5–5.5 V - allows drop-in replacement in both modern ultra-low-power and legacy 5 V systems. |
| ERR Pin Behavior | Active-HIGH output asserted only during corrected read cycles - enables hardware-triggered logging or fault-aware firmware handling. |
| Data Retention | 1.0 V minimum - maintains stored contents during brown-out conditions where VCC drops below operational threshold. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word addressing; A20 enables highest address bit selection. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path; high-impedance when CE1 HIGH, CE2 LOW, OE HIGH, or WE LOW. |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 enable hierarchical chip select; deselect via CE1 HIGH or CE2 LOW. |
| OE | Output Enable | Active-LOW control of output drivers; disables outputs (high-Z) when HIGH, independent of CE state. |
| WE | Write Enable | Active-LOW signal initiating write cycle; must be LOW with CE1 LOW and CE2 HIGH to store data. |
| ERR | Error Indication Output | Open-drain or push-pull (per config); asserts HIGH only during successful single-bit correction on read. |
| VCC, VSS | Power Supply Pins | Two VCC balls (Balls A16, A18) and two VSS balls (Balls D1, E1) provide low-inductance power distribution. |
| NC | No Connect | Unbonded pads (e.g., Balls B1, C1, D2); not internally connected - avoid routing or termination. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-based single-bit error correction per read cycle - eliminates need for external ECC controllers or software parity checks. |
| Ultra-Low Standby Power | 5.5 µA typical ISB2 at 5 V - extends battery life in always-on IoT gateways without sacrificing memory density. |
| Dual-Voltage Operation | Supports both 1.8 V and 5 V system rails - simplifies migration paths and reduces BOM count across product generations. |
| TTL-Compatible I/O | VIH/VIL thresholds match standard TTL logic - enables direct interfacing with legacy microcontrollers and FPGAs without level shifters. |
| ERR Pin Signaling | Dedicated hardware flag for ECC events - allows deterministic fault response (e.g., log timestamp, trigger watchdog reset) without polling. |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Imaging Cache |
|---|---|
Use Scenario: Stores real-time sensor fusion data and control instruction sets in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Byte-wide SRAM buffer with ECC protection ensuring deterministic execution despite voltage transients or EMI-induced bit flips. Use Value: Prevents silent data corruption in safety-critical ladder logic execution by correcting single-bit errors before they propagate to output stages. |
Use Scenario: Temporarily holds DICOM image tiles during real-time reconstruction in portable ultrasound or X-ray units with constrained power budgets. IC Role / Device Role / Timing Role: Low-latency, low-power frame buffer supporting 45 ns reads while maintaining data fidelity across repeated thermal cycling. Use Value: Enables reliable image stitching without reacquisition - critical when battery-powered devices cannot afford redundant storage or CRC retries. |
| Railway Signaling Data Logger | Avionics Health Monitor Buffer |
Use Scenario: Captures GPS-synchronized train position logs and track circuit status over extended periods in unheated trackside cabinets. IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM (1.0 V hold) preserving last-known safe state during brown-outs between scheduled maintenance windows. Use Value: Guarantees post-failure forensic analysis capability by retaining critical event timestamps even after prolonged power loss. |
Use Scenario: Buffers sensor telemetry (temperature, vibration, pressure) from engine-mounted transducers in regional aircraft auxiliary power units. IC Role / Device Role / Timing Role: Radiation-tolerant memory node detecting and correcting cosmic-ray-induced soft errors in flight-critical monitoring loops. Use Value: Reduces false-positive fault alerts by eliminating ECC-mitigated bit errors - lowering unnecessary maintenance dispatches and downtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV1288EBLL-45NLI | No embedded ECC; requires external error management; 128K × 8 organization (1 Mbit); 45 ns access at 3.3 V only. | Lacks hardware-level error correction - suitable only where software ECC or redundancy is already implemented. | Select only if system-level ECC is handled externally and density requirements are ≤1 Mbit. |
| Microchip 23LCV1024-I/P | Serial SPI interface; 1 Mbit density; no ECC; 1.7–5.5 V operation; 4 MHz max clock. | Serial architecture limits bandwidth vs. parallel SRAM - unsuitable for high-throughput buffering. | Choose only for space-constrained designs where pin count > speed/ECC priority and throughput ≤2 MB/s. |
Compared with IS62WV1288EBLL-45NLI and 23LCV1024-I/P, CY62168GE30-45BVXIT uniquely delivers parallel 16-Mbit capacity with integrated hardware ECC and dual-voltage support - making it irreplaceable in deterministic, high-integrity industrial memory subsystems where latency, density, and error resilience are jointly constrained.
Availability
CY62168GE30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic imaging caches, and railway signaling data loggers requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.
Supply support for CY62168GE30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.
CY62168GE30-45BVXIT belongs to the MoBL® (Mobile Binary Logic) SRAM product line, designed specifically for ultra-low-power, high-reliability embedded memory applications in industrial, medical, and transportation systems where data integrity and energy efficiency are co-constrained.
FAQ
Does CY62168GE30-45BVXIT support automatic error correction write-back?
No. The device performs single-bit error detection and correction during read cycles only, and does not automatically rewrite corrected data back to the memory array. The ERR pin signals correction occurrence, but the original erroneous bit remains unaltered in the cell unless explicitly rewritten by the host system.
What is the function of the NC pins in the VFBGA package?
NC (No Connect) pins - such as Balls B1, C1, and D2 - are physically present but not bonded to the silicon die. They serve no electrical function and must remain unconnected; routing traces or applying pull-up/down resistors to these balls may cause mechanical stress or unintended coupling.
Can CY62168GE30-45BVXIT operate reliably at 3.3 V?
No. The device is specified only for 1.65–2.2 V and 4.5–5.5 V supply ranges. Operation at 3.3 V falls outside guaranteed specifications and may result in undefined behavior, increased standby current, or failure to meet timing parameters - including ECC functionality.
How does the ERR pin behave during uncorrectable multi-bit errors?
The ERR pin is not asserted for multi-bit errors. It activates exclusively for single-bit errors detected and corrected during read operations. Multi-bit errors are not corrected and produce undefined or invalid data on I/O lines; no flag or interrupt is generated for such events.
CY62168GE30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62168GE30-45BVXIT FAQ
1.How can I place an order for CY62168GE30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62168GE30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62168GE30-45BVXIT reliable?
The price and inventory of CY62168GE30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62168GE30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62168GE30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62168GE30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62168GE30-45BVXIT?
CY62168GE30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62168GE30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62168GE30-45BVXIT?
For technical support, including CY62168GE30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62168GE30-45BVXIT requirements.
6.How does Aetrix verify that CY62168GE30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62168GE30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62168GE30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62168GE30-45BVXIT?
All CY62168GE30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62168GE30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62168GE30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62168GE30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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