Infineon Technologies CY62168GN30-45BVXI

Overview

CY62168GN30-45BVXI from Cypress Semiconductor is a 16-Mbit (2M × 8) MoBL low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (1.5 µA typical). It features dual chip enables (CE1/CE2), TTL-compatible I/O, and 1.0 V data retention-designed for battery-backed memory in portable industrial controllers and real-time data logging systems.

For engineers reviewing the CY62168GN30-45BVXI datasheet, CY62168GN30-45BVXI pinout, CY62168GN30-45BVXI application, or CY62168GN30-45BVXI equivalent, key selection criteria include standby power budgeting, VFBGA board space constraints, dual-CE timing coordination, and compatibility with 3.3 V or mixed-voltage microcontroller buses.

Technical Context

This SRAM implements a synchronous, asynchronous read/write interface with independent CE1/CE2 control logic enabling selective power-down of memory banks. Its transistor-transistor logic (TTL)-compatible inputs and outputs allow direct interfacing with legacy 3.3 V or 2.5 V microcontrollers without level shifters.

The device uses a 2M × 8 architecture with 21 address lines (A0–A20), eight bidirectional I/O pins (I/O0–I/O7), and supports automatic power-down when CE1 is HIGH or CE2 is LOW. Data retention at 1.0 V is guaranteed across –40 °C to +85 °C industrial temperature range.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm footprint, 1 mm height, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS62WV1288BLL-45NLI and N25S80-45G, CY62168GN30-45BVXI uniquely balances ultra-low standby (1.5 µA), dual-CE flexibility, and 2.2 V minimum VCC-making it optimal for battery-operated systems needing both extended sleep and seamless voltage scalability.

Availability

CY62168GN30-45BVXI is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, smart energy meters, and ruggedized telematics units requiring stable component supply across extended product lifecycles.

Supply support for CY62168GN30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power innovation and long-term supply stability.

CY62168GN30-45BVXI belongs to the MoBL (Mobile Bit-Low-power) SRAM product line, engineered specifically for portable and battery-dependent systems where nanowatt-level standby and robust data retention are mandatory.

FAQ

What is the minimum VCC required to retain data in CY62168GN30-45BVXI?

The device guarantees data retention down to 1.0 V VCC across its full industrial temperature range (–40 °C to +85 °C). This is verified per JEDEC JESD22-A107 and applies when CE1 is deasserted or CE2 is disabled, placing the SRAM in retention mode with no active current draw beyond ICCDR (≤8 µA at VCC ≥2.2 V).

Can CY62168GN30-45BVXI operate with only CE1 enabled and CE2 tied to VCC?

Yes - CE2 must be held HIGH (≥VCC – 0.2 V) for normal operation. The device supports dual-CE logic: CE1 LOW + CE2 HIGH enables access; CE1 HIGH or CE2 LOW forces standby. Tying CE2 to VCC satisfies the HIGH condition and is standard practice in single-CE system designs.

Does CY62168GN30-45BVXI require external pull-up or pull-down resistors on NC pins?

No - NC (No Connect) pins are internally unconnected and electrically floating. Cypress explicitly states they are not bonded to the die and may be left unconnected on PCB layout. Adding external terminations risks unintended coupling or leakage paths and is unnecessary per datasheet guidance.

How does the 48-ball VFBGA package affect thermal management in continuous read/write operation?

With θJA = 31.5 °C/W on a 4-layer board, the package limits junction temperature rise to ~1.1 °C per mA of ICC. At worst-case 35 mA operating current, ΔT ≈ 37 °C - keeping TJ < 85 °C even at 50 °C ambient, eliminating need for heatsinking in most embedded deployments.