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Infineon Technologies CY62168GN30-45BVXIT
- Part No.:
- CY62168GN30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- -
- Datasheet:
-
CY62168GN30-45BVXIT.pdf
- Description:
- IC SRAM
- Quantity:
- Payment:
- Shipping:
Inventory:4,518
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Product details
Overview
CY62168GN30-45BVXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) MoBL low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low 1.5 µA typical standby current. It features dual chip enable (CE1/CE2) control, TTL-compatible I/O, and 1.0 V data retention-designed for battery-backed memory in portable industrial controllers and real-time data logging systems.
For engineers reviewing the CY62168GN30-45BVXIT datasheet, CY62168GN30-45BVXIT pinout, CY62168GN30-45BVXIT application, or CY62168GN30-45BVXIT equivalent, key selection criteria include guaranteed 45 ns read/write timing at 3.6 V, VFBGA-48 package footprint compatibility, dual CE logic for hierarchical memory mapping, and sub-8 µA max ISB2 across –40°C to +85°C industrial temperature range.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array with transistor-transistor logic compatible inputs/outputs and automatic power-down mode triggered by CE1 HIGH or CE2 LOW. Its dual CE architecture enables selective bank enabling in multi-SRAM systems without external decoding logic.
The device supports three operational states: active read (CE1=LOW, CE2=HIGH, OE=LOW, WE=HIGH), active write (CE1=LOW, CE2=HIGH, WE=LOW), and power-down (CE1 HIGH or CE2 LOW). Data retention at 1.0 V is supported with ≤8 µA ICCDR current, verified under industrial temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (2,097,152 words × 8 bits) - supports byte-wide data bus interfacing without multiplexing |
| Access Time | 45 ns maximum - ensures deterministic timing for 22.22 MHz burst reads in microcontroller co-processor interfaces |
| VCC Range | 2.2 V to 3.6 V - compatible with single-supply 3.3 V and mixed-voltage 2.5 V system rails |
| Standby Current | Max 8 µA at 85°C - enables >1-year battery life in coin-cell-powered data loggers |
| Data Retention Voltage | 1.0 V minimum - allows memory state hold during brown-out or controlled power-down sequences |
| Package | 48-ball VFBGA (6 mm × 8 mm × 1 mm) - meets IPC-7351B LCC-48 standard for high-density PCB layout |
| Operating Temperature | –40°C to +85°C industrial grade - qualified for deployment in factory automation and outdoor telemetry units |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm body, 0.5 mm ball pitch, Pb-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word addressing; no internal address latching required |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit TTL-compatible I/O with high-impedance control via CE/OE/WE - eliminates need for external bus transceivers |
| CE1, CE2 | Dual Chip Enable Inputs | Asymmetric logic: CE1=LOW & CE2=HIGH enables device; CE1 HIGH or CE2 LOW forces power-down - enables hierarchical memory banking |
| OE | Output Enable | Controls output buffer only; does not affect internal array access - allows read-modify-write cycles without toggling CE |
| WE | Write Enable | Active-LOW write strobe synchronized with CE1/CE2 - defines write cycle boundary per JEDEC SRAM timing conventions |
| VCC, VSS | Power Supply Pins | Two VCC and two VSS balls provide low-inductance power delivery - reduces simultaneous switching noise in high-speed operation |
| NC | No Connect | Unbonded die pads; electrically isolated - usable as routing channels or thermal relief pads on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low standby power | 1.5 µA typical ISB2 at 25°C - extends battery runtime in always-on sensor nodes without sacrificing wake latency |
| 1.0 V data retention | Guaranteed memory state hold at VCC = 1.0 V - supports graceful shutdown during power failure with zero data loss |
| Dual CE architecture | Independent CE1/CE2 logic enables seamless integration into multi-bank memory maps - eliminates external address decoder ICs |
| TTL-compatible I/O | VIH/VIL thresholds match legacy 5 V logic families - allows direct interface to FPGA I/O banks configured for 3.3 V LVTTL |
| VFBGA-48 footprint | Industry-standard 0.5 mm pitch BGA - supports automated optical inspection (AOI) and reflow profiling per J-STD-020 |
Applications
| Industrial Data Logger | Medical Patient Monitor Buffer |
|---|---|
|
Use Scenario: Continuous acquisition of ECG waveforms at 1 kS/s with local buffering before wireless transmission. IC Role / Device Role / Timing Role: Byte-wide SRAM acting as circular buffer between ADC controller and BLE subsystem; 45 ns access enables real-time overwrite without CPU intervention. Use Value: 1.0 V data retention preserves last 30 seconds of waveform during battery swap; 8 µA ISB2 permits >2-week operation on CR2032 cell. |
Use Scenario: Temporary storage of vital sign trends (SpO₂, NIBP, temperature) during network outage in bedside monitors. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding clinical data during AC power loss; dual CE allows isolation from main system bus during fault recovery. Use Value: Guaranteed data integrity at 1.0 V enables fail-safe patient record preservation; VFBGA-48 minimizes board area in space-constrained front-panel modules. |
| Ruggedized Handheld Terminal | Programmable Logic Controller (PLC) I/O Cache |
|
Use Scenario: Barcode scanning and inventory update in warehouse environments with frequent drop-induced power interruption. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M7 application core; operates at 3.3 V with 2.2 V brown-out tolerance. Use Value: Sub-8 µA standby current extends recharge interval; 45 ns timing supports 100+ MIPS execution without wait states. |
Use Scenario: Caching analog input/output values and ladder logic state variables in DIN-rail mounted PLCs. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic scan execution; dual CE enables hot-swappable I/O module addressing. Use Value: Industrial temperature rating (–40°C to +85°C) ensures reliability in unconditioned control cabinets; 2.2–3.6 V range matches 3.3 V PLC backplane rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV1288BLL-45NLI | 16-Mbit (128K × 16), 45 ns, 2.7–3.6 V, 25 µA max ISB - wider voltage range but higher standby current | Requires data bus width adaptation (16-bit vs. 8-bit); lacks 1.0 V data retention | Select when 16-bit data path is preferred and extended VCC margin outweighs battery-life penalty |
| ON Semiconductor NVSRAM NCS25168G-45VXI | 16-Mbit nvSRAM with integrated EEPROM backup; 45 ns, 2.7–3.6 V, 12 µA ISB - adds nonvolatile write capability | Eliminates external backup capacitor; higher cost and larger 54-ball BGA footprint | Select when automatic data persistence on power loss is mandatory and cost premium is acceptable |
Compared with IS62WV1288BLL-45NLI and NCS25168G-45VXI, CY62168GN30-45BVXIT delivers superior battery efficiency via 8 µA max ISB2 and unique 1.0 V retention, while maintaining pin-for-pin compatibility in 8-bit embedded systems where deterministic SRAM behavior is prioritized over nonvolatile write.
Availability
CY62168GN30-45BVXIT is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, and ruggedized handheld terminals requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for CY62168GN30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.
CY62168GN30 belongs to the MoBL (Mobile Low Power) SRAM product line, engineered specifically for ultra-low-power, battery-operated embedded systems requiring fast, deterministic memory access without nonvolatile overhead.
FAQ
What is the minimum VCC required to maintain data during retention mode?
The CY62168GN30-45BVXIT guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤8.0 µA across the full industrial temperature range (–40°C to +85°C), and no external backup capacitor is needed. Operation below 1.0 V risks data loss.
Can CE1 and CE2 be tied together for single-enable operation?
No - CE1 and CE2 must be driven with complementary logic: CE1 LOW and CE2 HIGH for access; CE1 HIGH or CE2 LOW for power-down. Tying them together violates the functional truth table and prevents reliable entry into low-power mode. External logic or MCU GPIOs must generate the required asymmetric levels.
Is the 48-ball VFBGA package RoHS and REACH compliant?
Yes - the CY62168GN30-45BVXIT carries Pb-free (lead-free) finish and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Certificate of Compliance is available upon request and references IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3).
Does this SRAM support asynchronous burst reads?
No - the CY62168GN30-45BVXIT is a standard asynchronous SRAM with no burst mode or internal address counter. Each read requires a valid address on A0–A20 and assertion of CE1/CE2/OE per cycle. Burst functionality must be implemented externally via controller logic or DMA engine.
CY62168GN30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- SRAM
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
CY62168GN30-45BVXIT FAQ
1.How can I place an order for CY62168GN30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62168GN30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62168GN30-45BVXIT reliable?
The price and inventory of CY62168GN30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62168GN30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62168GN30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62168GN30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62168GN30-45BVXIT?
CY62168GN30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62168GN30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62168GN30-45BVXIT?
For technical support, including CY62168GN30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62168GN30-45BVXIT requirements.
6.How does Aetrix verify that CY62168GN30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62168GN30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62168GN30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62168GN30-45BVXIT?
All CY62168GN30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62168GN30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62168GN30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62168GN30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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