Infineon Technologies CY62168GN30-45BVXIT

Overview

CY62168GN30-45BVXIT from Cypress Semiconductor is a 16-Mbit (2M × 8) MoBL low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low 1.5 µA typical standby current. It features dual chip enable (CE1/CE2) control, TTL-compatible I/O, and 1.0 V data retention-designed for battery-backed memory in portable industrial controllers and real-time data logging systems.

For engineers reviewing the CY62168GN30-45BVXIT datasheet, CY62168GN30-45BVXIT pinout, CY62168GN30-45BVXIT application, or CY62168GN30-45BVXIT equivalent, key selection criteria include guaranteed 45 ns read/write timing at 3.6 V, VFBGA-48 package footprint compatibility, dual CE logic for hierarchical memory mapping, and sub-8 µA max ISB2 across –40°C to +85°C industrial temperature range.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array with transistor-transistor logic compatible inputs/outputs and automatic power-down mode triggered by CE1 HIGH or CE2 LOW. Its dual CE architecture enables selective bank enabling in multi-SRAM systems without external decoding logic.

The device supports three operational states: active read (CE1=LOW, CE2=HIGH, OE=LOW, WE=HIGH), active write (CE1=LOW, CE2=HIGH, WE=LOW), and power-down (CE1 HIGH or CE2 LOW). Data retention at 1.0 V is supported with ≤8 µA ICCDR current, verified under industrial temperature conditions.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm body, 0.5 mm ball pitch, Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS62WV1288BLL-45NLI and NCS25168G-45VXI, CY62168GN30-45BVXIT delivers superior battery efficiency via 8 µA max ISB2 and unique 1.0 V retention, while maintaining pin-for-pin compatibility in 8-bit embedded systems where deterministic SRAM behavior is prioritized over nonvolatile write.

Availability

CY62168GN30-45BVXIT is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, and ruggedized handheld terminals requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY62168GN30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.

CY62168GN30 belongs to the MoBL (Mobile Low Power) SRAM product line, engineered specifically for ultra-low-power, battery-operated embedded systems requiring fast, deterministic memory access without nonvolatile overhead.

FAQ

What is the minimum VCC required to maintain data during retention mode?

The CY62168GN30-45BVXIT guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤8.0 µA across the full industrial temperature range (–40°C to +85°C), and no external backup capacitor is needed. Operation below 1.0 V risks data loss.

Can CE1 and CE2 be tied together for single-enable operation?

No - CE1 and CE2 must be driven with complementary logic: CE1 LOW and CE2 HIGH for access; CE1 HIGH or CE2 LOW for power-down. Tying them together violates the functional truth table and prevents reliable entry into low-power mode. External logic or MCU GPIOs must generate the required asymmetric levels.

Is the 48-ball VFBGA package RoHS and REACH compliant?

Yes - the CY62168GN30-45BVXIT carries Pb-free (lead-free) finish and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Certificate of Compliance is available upon request and references IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3).

Does this SRAM support asynchronous burst reads?

No - the CY62168GN30-45BVXIT is a standard asynchronous SRAM with no burst mode or internal address counter. Each read requires a valid address on A0–A20 and assertion of CE1/CE2/OE per cycle. Burst functionality must be implemented externally via controller logic or DMA engine.