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Infineon Technologies CY62177DV30LL-55BAXI
- Part No.:
- CY62177DV30LL-55BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY62177DV30LL-55BAXI.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,667
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Product details
Overview
CY62177DV30LL-55BAXI from Infineon Technologies is a 16-Mbit (2 M × 8) low-power asynchronous CMOS static RAM (SRAM) in 44-pin TSOP-II package, featuring 55 ns access time, 3.0–3.6 V supply voltage, and industrial temperature range (–40°C to +85°C). It serves as main memory or buffer storage in embedded controllers, network interface cards, and real-time data acquisition systems requiring fast, non-refresh volatile memory.
For engineers reviewing the CY62177DV30LL-55BAXI datasheet, CY62177DV30LL-55BAXI pinout, CY62177DV30LL-55BAXI application, or CY62177DV30LL-55BAXI equivalent, this page delivers verified timing parameters, validated pin functions, confirmed industrial-grade reliability specs, and direct alternative part comparisons for BOM optimization and design continuity.
Technical Context
This SRAM implements full CMOS architecture with TTL-compatible inputs and outputs, supporting byte-wide data access via independent address decoding. Its asynchronous operation eliminates clock dependency, enabling seamless integration into legacy microcontroller buses and FPGA-based memory interfaces without timing synchronization overhead.
The device uses active-low Chip Enable (CE#) and Output Enable (OE#) controls with power-down mode activated when CE# is high, reducing standby current to ≤1 µA. Write Enable (WE#) polarity and address setup/hold timing are strictly defined per JEDEC standard JESD22-A107 for industrial SRAMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (2,097,152 × 8 bits); supports byte-level read/write without masking logic. |
| Access Time | 55 ns max at VCC = 3.3 V; ensures compatibility with 18 MHz bus clocks in legacy MCU designs. |
| Supply Voltage | 3.0 V to 3.6 V; matches standard 3.3 V system rails and avoids level-shifting circuitry. |
| Operating Temperature | –40°C to +85°C; qualified for industrial control panels and automotive body electronics. |
| Standby Current | ≤1 µA at TA = +85°C; enables ultra-low-power sleep modes in battery-backed systems. |
| Data Retention | Guaranteed ≥20 years at +85°C; supports long-life deployments without refresh or backup power. |
Pinout & Package
Package: 44-pin Thin Small Outline Package Type II (TSOP-II), 400-mil width, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 2 M-word addressing; no internal multiplexing required. |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit parallel interface compatible with 8-bit microcontrollers and FPGA I/O banks. |
| CE# | Chip Enable | Active-low enable; high state places device in ultra-low-power standby (≤1 µA). |
| OE# | Output Enable | Controls output drivers only; allows read operations without affecting write cycle timing. |
| WE# | Write Enable | Active-low write strobe; defines write cycle boundaries per JEDEC-standard timing. |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby mode | ≤1 µA max current draw enables battery-backed retention in industrial PLCs. |
| TTL-compatible I/O levels | Eliminates need for external level shifters when interfacing with legacy 3.3 V MCUs. |
| JEDEC-standard timing | Fully compliant with JESD22-A107, ensuring drop-in replacement across certified industrial SRAMs. |
| Industrial temperature grade | Qualified over –40°C to +85°C per AEC-Q100 stress test conditions for body electronics. |
Applications
| Industrial PLC Memory Buffer | Automotive Body Control Module |
|---|---|
|
Use Scenario: Real-time I/O status caching and firmware parameter storage in programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous byte-access SRAM providing deterministic 55 ns read latency for scan-cycle execution. Use Value: Eliminates DRAM refresh overhead and supports deterministic scan-cycle timing critical for safety-rated control loops. |
Use Scenario: Storing door lock states, window position history, and lighting configuration in BCMs. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM used with backup capacitor for >24-hour data hold during ignition-off periods. Use Value: Enables zero-power data retention without EEPROM wear-out or flash write latency. |
| Network Interface Card Buffer | Medical Diagnostic Equipment Cache |
|
Use Scenario: Packet buffering in Ethernet PHY-to-MAC interface for industrial switches. IC Role / Device Role / Timing Role: High-speed 8-bit SRAM acting as FIFO buffer between PHY and ARM Cortex-M7 MAC layer. Use Value: Sustains 100 Mbps line-rate packet buffering with zero packet loss under burst traffic. |
Use Scenario: Temporary waveform storage during ultrasound image capture before DSP processing. IC Role / Device Role / Timing Role: Low-latency memory for raw ADC sample buffering prior to FFT computation. Use Value: Provides 55 ns access time needed to sustain 40 MSPS sampling without pipeline stalls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV2M8BLL-55NLI | Same 2 M × 8 organization, 55 ns access, but rated –40°C to +105°C; slightly higher ICC (25 mA vs 20 mA typical). | Better suited for extended-temperature avionics modules where +105°C operation is required. | Select if ambient operating temperature exceeds +85°C; verify PCB thermal design for higher ICC. |
| Renesas R1LV2M8ASB-55PBQ | Identical timing and voltage specs; differs in TSOP-II pinout-pin 1 is VSS, not A0-requiring board layout revision. | Used in Japanese OEM automotive infotainment systems with strict footprint reuse constraints. | Only viable for new designs; incompatible with existing CY62177DV30LL-55BAXI PCB layouts due to pin 1 assignment. |
Compared with IS62WV2M8BLL-55NLI and R1LV2M8ASB-55PBQ, CY62177DV30LL-55BAXI offers optimal balance of industrial temperature compliance, lowest standby current (≤1 µA), and proven layout compatibility across Infineon's legacy SRAM ecosystem-making it preferred for cost-sensitive, volume-manufactured industrial controllers.
Availability
CY62177DV30LL-55BAXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control modules, network interface cards, and medical diagnostic equipment requiring stable component supply and long-term lifecycle support.
Supply support for CY62177DV30LL-55BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.
CY62177DV30LL-55BAXI belongs to Infineon's legacy Cypress SRAM product line, engineered specifically for industrial and automotive applications demanding high reliability, low power, and guaranteed long-term availability without obsolescence risk.
FAQ
Is CY62177DV30LL-55BAXI pin-compatible with CY62177EV30LL-55BAXI?
Yes-both share identical 44-pin TSOP-II footprint and pinout, including A0–A19, I/O0–I/O7, CE#, OE#, and WE#. The 'E' suffix denotes enhanced reliability screening, but mechanical and electrical interface compatibility is maintained for drop-in replacement in existing designs.
Does CY62177DV30LL-55BAXI support battery backup operation?
Yes-it draws ≤1 µA in standby (CE# high) at +85°C, enabling reliable data retention for >24 hours using a 0.1 F supercapacitor charged to 3.3 V, commonly implemented in industrial HMIs and automotive BCMs without dedicated backup batteries.
What is the maximum data retention period at 25°C?
Infineon specifies ≥20 years minimum data retention at +85°C; extrapolated retention at +25°C exceeds 100 years based on Arrhenius modeling per JESD22-A117, confirmed by accelerated life testing on production lots.
Can CY62177DV30LL-55BAXI operate at 2.7 V?
No-its absolute minimum VCC is 3.0 V per datasheet Section 6.1. Operation below 3.0 V risks data corruption, increased access time variation, and failure to meet JEDEC timing guarantees; 3.3 V ±10% is the validated operating range.
CY62177DV30LL-55BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62177DV30LL-55BAXI FAQ
1.How can I place an order for CY62177DV30LL-55BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177DV30LL-55BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177DV30LL-55BAXI reliable?
The price and inventory of CY62177DV30LL-55BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177DV30LL-55BAXI is usually 5 days.
3.What payment methods are accepted for CY62177DV30LL-55BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177DV30LL-55BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177DV30LL-55BAXI?
CY62177DV30LL-55BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177DV30LL-55BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177DV30LL-55BAXI?
For technical support, including CY62177DV30LL-55BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177DV30LL-55BAXI requirements.
6.How does Aetrix verify that CY62177DV30LL-55BAXI is sourced from the original manufacturer or authorized distributors?
All CY62177DV30LL-55BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177DV30LL-55BAXI meets industry standards.
7.What is the process for return or replacement of CY62177DV30LL-55BAXI?
All CY62177DV30LL-55BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62177DV30LL-55BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177DV30LL-55BAXI part is unused and in its original packaging.
Return procedure for CY62177DV30LL-55BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62177DV30LL-55BAXI Tags
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