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Infineon Technologies CY62177EV18LL-70BAXI
- Part No.:
- CY62177EV18LL-70BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY62177EV18LL-70BAXI.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:415
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Product details
Overview
CY62177EV18LL-70BAXI from Cypress Semiconductor is a 32-Mbit MoBL® CMOS static RAM organized as 2 M × 16 or 4 M × 8, operating at 70 ns access time with 1.65 V to 2.25 V supply voltage. It delivers ultra-low standby current (3 µA typical), supports automatic power-down on deselect, and targets battery-constrained portable systems including cellular handsets and handheld medical devices.
For engineers reviewing the CY62177EV18LL-70BAXI datasheet, CY62177EV18LL-70BAXI pinout, CY62177EV18LL-70BAXI application, or CY62177EV18LL-70BAXI equivalent, this SRAM offers verified dual-word-width configuration, byte-level write control via BHE/ BLE, and industrial-grade temperature operation (–40 °C to +85 °C) in a Pb-free 48-ball TSOP I package.
Technical Context
The device implements a dual-configuration memory array with independent row/column decoding for 2 M × 16 and 4 M × 8 modes, selected by external BYTE pin biasing (VCC for 16-bit, VSS for 8-bit). Its CMOS architecture enables fast switching with 1 V/ns input transition compliance and guaranteed 70 ns tRC across full voltage and temperature range.
Power management relies on three independent enable paths: CE1 HIGH, CE2 LOW, or simultaneous BHE/BLE HIGH - all triggering automatic power-down mode with ≤25 µA ISB2. Output drivers support high-impedance tri-state control via OE, CE, and byte enables with defined tLZ/tHZ timing (≤25 ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2 M × 16 or 4 M × 8 configuration) |
| Access Time | 70 ns maximum - guarantees deterministic read/write timing in real-time embedded systems |
| Supply Voltage | 1.65 V to 2.25 V - compatible with low-voltage SoC interfaces and battery-powered designs |
| Standby Current | 3 µA typical / 25 µA max - enables multi-week battery life in always-on sensor nodes |
| Active Current | 4.5 mA typical at 1 MHz - supports burst-mode operation without thermal throttling |
| Data Retention Voltage | 1.0 V minimum - allows memory state hold during brown-out or sleep-mode VCC scaling |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial and automotive cabin applications |
Pinout & Package
Package: 48-ball TSOP I (Pb-free, RoHS-compliant), 12 mm × 20 mm footprint, 0.8 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2 M × 16 or 4 M × 8 addressing; A21 appears only in 4 M × 8 mode (Pin 45) |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW; high-impedance when disabled or during write |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW; unused in 4 M × 8 mode |
| CE1, CE2 | Chip Enable Controls | Dual CE logic: CE1 LOW + CE2 HIGH enables device; either CE1 HIGH or CE2 LOW forces auto power-down |
| OE | Output Enable | Controls output driver enable; HIGH places I/O pins in high-Z; required HIGH during write operations |
| WE | Write Enable | LOW initiates write cycle; timing referenced to tSD/tHD windows relative to WE edge |
| BHE, BLE | Byte Enable Inputs | Independent control of high/low byte writes; both HIGH disables I/O drivers and triggers power-down |
| BYTE | Configuration Select | Must be tied to VCC for 2 M × 16 mode; tied to VSS for 4 M × 8 mode; determines pin function mapping |
| Pin 13 | DNU (Do Not Use) | Must remain floating - connection causes undefined behavior or functional failure |
Key Features
| Feature | Design Value |
|---|---|
| Dual Word-Width Configuration | Single part supports 2 M × 16 (BYTE = VCC) or 4 M × 8 (BYTE = VSS), reducing BOM count in multi-platform designs |
| Automatic Power-Down | Reduces ICC to ≤25 µA when deselected via CE1/CE2/BHE+BLE - eliminates need for external power gating logic |
| Byte-Level Write Control | Independent BHE/BLE inputs allow selective 8-bit writes without masking or read-modify-write cycles |
| Low-Voltage Compatibility | 1.65–2.25 V operation aligns with modern SoC I/O domains (e.g., ARM Cortex-M series, LPDDR controllers) |
| Industrial Temperature Range | –40 °C to +85 °C qualification ensures reliability in uncontrolled environments like factory automation or outdoor IoT gateways |
Applications
| Cellular Handset Memory Buffer | Portable Medical Monitor Data Cache |
|---|---|
|
Use Scenario: Stores real-time sensor waveform data between ADC sampling bursts and Bluetooth LE transmission intervals. IC Role / Device Role / Timing Role: Low-latency, low-power SRAM buffer interfacing directly with microcontroller's parallel memory bus. Use Value: 70 ns access time enables sub-10 µs data fetches; 3 µA standby current extends single-cell Li-ion battery life beyond 30 days in sleep mode. |
Use Scenario: Holds ECG waveform history and calibration parameters during intermittent power cycling in battery-operated patient monitors. IC Role / Device Role / Timing Role: Non-volatile shadow memory replacement with zero-refresh overhead and deterministic timing. Use Value: 1.0 V data retention threshold allows memory state preservation during 500 ms brown-out events; DNU pin awareness prevents field failures. |
| Industrial PLC I/O Mapping Table | Automotive Infotainment UI Frame Buffer |
|
Use Scenario: Stores dynamic I/O mapping tables updated during runtime in programmable logic controllers deployed in harsh factory settings. IC Role / Device Role / Timing Role: Parallel interface SRAM accessed by FPGA or microcontroller for fast register lookup and update. Use Value: –40 °C to +85 °C rating ensures stable operation near motor drives; 48-ball TSOP I package supports automated optical inspection (AOI) and reflow compatibility. |
Use Scenario: Buffers rendered UI frames for display controller in automotive head units where power efficiency and thermal budget are constrained. IC Role / Device Role / Timing Role: High-speed, low-power frame storage element synchronized to display refresh clock. Use Value: Dual 2 M × 16 / 4 M × 8 configuration allows flexible pixel depth allocation (e.g., 16-bit RGB565 or 8-bit indexed palettes); 4.5 mA active current avoids thermal derating at 60 Hz refresh. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV25616BLL-70NLI | 256 K × 16 organization (4 Mbit), 70 ns access, 2.5 V to 3.6 V supply - no 1.8 V support | Lacks dual-width configuration and automatic power-down; requires external power management | Select when higher voltage margin is needed and density requirements are lower than 32 Mbit |
| ON Semiconductor NVSRAM NVTFS256K16LP-70G | Non-volatile SRAM with integrated EEPROM backup; same 256 K × 16 density but 70 ns volatile access | Provides data retention after power loss - adds complexity and cost vs. pure SRAM use case | Select only if persistent state retention across power cycles is mandatory and cost premium is acceptable |
Compared with IS62WV25616BLL-70NLI and NVTFS256K16LP-70G, CY62177EV18LL-70BAXI uniquely combines 32 Mbit density, 1.65–2.25 V operation, dual-width flexibility, and sub-25 µA auto power-down - making it optimal for space- and energy-constrained portable systems requiring scalable memory bandwidth.
Availability
CY62177EV18LL-70BAXI is available at Aetrix Electronics and suitable for cellular handset memory buffers, portable medical monitor data caches, and industrial PLC I/O mapping tables requiring stable component supply, long-lifecycle availability, and Pb-free compliance.
Supply support for CY62177EV18LL-70BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in embedded systems solutions, including PSoC, Traveo, and high-reliability memory products.
CY62177EV18 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and minimal thermal footprint are critical design constraints.
FAQ
What is the function of the BYTE pin on CY62177EV18LL-70BAXI?
The BYTE pin selects memory organization: tying it to VCC configures the device as 2 M × 16 (16-bit data bus), while tying it to VSS configures it as 4 M × 8 (8-bit data bus). In 4 M × 8 mode, Pin 45 becomes A21, and BHE, BLE, and I/O8–I/O14 are unused. This pin must never be left floating or driven to intermediate voltages.
Can CY62177EV18LL-70BAXI operate reliably at 1.65 V?
Yes - the device is fully specified and tested over 1.65 V to 2.25 V. All timing parameters (including 70 ns tRC), power consumption (3 µA ISB2 typical), and logic thresholds (VIH ≥ 1.4 V, VIL ≤ 0.4 V) are guaranteed at VCC = 1.65 V and TA = –40 °C to +85 °C, per datasheet Rev. *C Section 4.
How does automatic power-down activate, and what is its impact on current draw?
Automatic power-down activates when any of these conditions occur: CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH. Under these states, ISB2 is guaranteed ≤25 µA at VCC = 2.25 V and TA = +85 °C. This reduces active current by >99% compared to typical 4.5 mA ICC at 1 MHz, eliminating need for external power sequencing.
Is Pin 13 truly unused, and what happens if it is connected?
Yes - Pin 13 is designated DNU (Do Not Use) and must remain unconnected and floating in all applications. Connecting it to any voltage rail, ground, or signal violates the internal circuit design and may cause unpredictable behavior, data corruption, or complete functional failure, as confirmed in datasheet Rev. *C Section 3 and Product Portfolio table footnote 1.
CY62177EV18LL-70BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62177EV18LL-70BAXI FAQ
1.How can I place an order for CY62177EV18LL-70BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177EV18LL-70BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177EV18LL-70BAXI reliable?
The price and inventory of CY62177EV18LL-70BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177EV18LL-70BAXI is usually 5 days.
3.What payment methods are accepted for CY62177EV18LL-70BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177EV18LL-70BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177EV18LL-70BAXI?
CY62177EV18LL-70BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177EV18LL-70BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177EV18LL-70BAXI?
For technical support, including CY62177EV18LL-70BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177EV18LL-70BAXI requirements.
6.How does Aetrix verify that CY62177EV18LL-70BAXI is sourced from the original manufacturer or authorized distributors?
All CY62177EV18LL-70BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177EV18LL-70BAXI meets industry standards.
7.What is the process for return or replacement of CY62177EV18LL-70BAXI?
All CY62177EV18LL-70BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62177EV18LL-70BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177EV18LL-70BAXI part is unused and in its original packaging.
Return procedure for CY62177EV18LL-70BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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