My Inquiry
My Account
Infineon Technologies CY62177EV18LL-70BAXIT
- Part No.:
- CY62177EV18LL-70BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY62177EV18LL-70BAXIT.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,215
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62177EV18LL-70BAXIT from Cypress Semiconductor is a 32-Mbit MoBL® CMOS static RAM organized as 2 M × 16 or 4 M × 8, operating at 70 ns access time with 1.65 V–2.25 V supply voltage, ultra-low standby current (3 µA typ), and automatic power-down mode-designed for battery-sensitive portable systems including cellular handsets and handheld medical monitors.
For engineers reviewing the CY62177EV18LL-70BAXIT datasheet, CY62177EV18LL-70BAXIT pinout, CY62177EV18LL-70BAXIT application, or CY62177EV18LL-70BAXIT equivalent, key selection criteria include dual-word-width configurability (2M×16/4M×8), TSOP I package pin compatibility, byte-enable-controlled partial-write capability, and guaranteed industrial temperature range (–40°C to +85°C) under low-voltage operation.
Technical Context
This SRAM implements a dual-bank addressable memory array with independent high-byte (BHE) and low-byte (BLE) enable control, supporting simultaneous or selective 8-bit writes within a 16-bit data bus. Its automatic power-down logic triggers when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH-reducing ICC to ≤25 µA without external sequencing.
The device uses CMOS circuitry optimized for sub-2.25 V operation, with input thresholds compliant to TTL-compatible levels (VIH ≥ 1.4 V, VIL ≤ 0.4 V) and output drive capable of sourcing/sinking ±0.1 mA at VOH/VOL specifications. Data retention is maintained down to VCC = 1.0 V with ICCDR ≤ 17 µA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 32 Mbit (2 M × 16 or 4 M × 8 configurable) |
| Access Time | 70 ns - guarantees deterministic read latency in real-time embedded control loops |
| Supply Voltage | 1.65 V to 2.25 V - enables direct interface with 1.8 V core logic and low-power SoCs |
| Standby Current | 3 µA typical / 25 µA max - extends battery life in always-on sensor nodes |
| Active Current | 4.5 mA typical at 1 MHz - supports burst-mode operation without thermal throttling |
| Data Retention Voltage | 1.0 V minimum - preserves memory state during brown-out or sleep-state transitions |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade deployment in automotive infotainment head units |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), lead-free, RoHS-compliant. Pin #13 is DNU (Do Not Use) and must remain floating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2 M × 16 or 4 M × 8 addressing; A21 appears only in 4 M × 8 mode on Pin 45 |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled by BLE; tri-stated when BLE HIGH or device deselected |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled by BHE; isolated from bus when BHE HIGH |
| CE1, CE2 | Chip Enable Controls | Two-level chip select: CE1 LOW + CE2 HIGH enables memory; either CE1 HIGH or CE2 LOW forces standby |
| OE | Output Enable | Controls read-data output drive; HIGH places I/O pins in high-Z regardless of CE state |
| WE | Write Enable | Active-LOW signal initiating write cycle; timing-critical for tSD (30 ns data setup) and tPWE (45 ns pulse width) |
| BHE, BLE | Byte Enable Inputs | Independent gating of high/low data bytes; both HIGH disables all I/Os and triggers auto-power-down |
| BYTE | Width Configuration | Tied to VCC for 2 M × 16 mode; tied to VSS for 4 M × 8 mode-determines pin function mapping |
Key Features
| Feature | Design Value |
|---|---|
| Dual Word Width | Hardware-configurable 2 M × 16 or 4 M × 8 via BYTE pin tie-off-enables reuse across memory-constrained and bandwidth-constrained designs |
| Ultra-Low Standby Power | 3 µA typical ISB2-reduces quiescent drain in always-listening IoT edge nodes between wake events |
| Automatic Power-Down | 99% current reduction when CE/BHE/BLE inactive-eliminates need for external power-gating logic |
| Byte-Controlled Writes | Independent BHE/ BLE activation allows 8-bit partial writes without read-modify-write overhead-critical for firmware patching and register-mapped peripherals |
| Industrial Temp Range | –40°C to +85°C operation at full speed and voltage-supports deployment in uncontrolled-ambient industrial HMIs and telematics gateways |
Applications
| Cellular Baseband Subsystem | Portable Medical Monitor |
|---|---|
Use Scenario: Real-time buffering of voice codec samples and protocol stack packet queues in 4G/LTE modem subsystems. IC Role / Device Role / Timing Role: High-speed, low-voltage SRAM providing zero-wait-state scratchpad memory for DSP co-processors. Use Value: 70 ns access time ensures uninterrupted audio frame processing; 1.8 V operation matches baseband SoC I/O voltage, eliminating level shifters. | Use Scenario: Storing real-time ECG waveform buffers and calibration coefficients in handheld patient monitors. IC Role / Device Role / Timing Role: Battery-backed volatile memory holding transient biosignal data during measurement bursts. Use Value: 3 µA standby current extends single-charge runtime beyond 72 hours; automatic power-down eliminates firmware sleep-state management overhead. |
| Automotive Infotainment Head Unit | Industrial HMI Controller |
Use Scenario: Caching navigation map tiles and UI asset bitmaps in automotive-grade infotainment systems. IC Role / Device Role / Timing Role: External SRAM supplementing limited internal RAM of ARM Cortex-A application processors. Use Value: –40°C to +85°C qualification ensures reliable operation across vehicle cabin temperatures; TSOP I package supports compact PCB layout. | Use Scenario: Holding configuration tables and real-time PLC I/O image data in programmable logic controllers. IC Role / Device Role / Timing Role: Deterministic-access memory for cyclic scan-based control execution. Use Value: Dual 8-bit write enables allow atomic updates to status registers without corrupting adjacent fields; 70 ns tRC meets <100 ns scan cycle deadlines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-70NLI | Same density (32 Mbit), 70 ns speed, but 2.5 V–3.6 V supply range; no automatic power-down feature | Requires external power management for low-power modes; not suitable for sub-2.25 V systems | Select if legacy 3.3 V design requires drop-in replacement without voltage rail redesign |
| ON Semiconductor NVSRAM N25S80-70G1227I | Non-volatile SRAM with integrated EEPROM backup; higher standby current (100 µA); same 70 ns access | Eliminates need for external battery/capacitor for data retention; adds write endurance limits | Select when persistent storage of critical runtime variables is required without external NV backup circuitry |
Compared with IS62WV51216BLL-70NLI and N25S80-70G1227I, CY62177EV18LL-70BAXIT uniquely delivers sub-2.25 V operation with hardware-triggered auto-power-down-making it optimal for energy-harvested or coin-cell-powered edge devices where voltage headroom and autonomous power gating are mandatory.
Availability
CY62177EV18LL-70BAXIT is available at Aetrix Electronics and suitable for cellular baseband subsystems, portable medical monitors, and automotive infotainment head units requiring stable component supply across extended product lifecycles.
Supply support for CY62177EV18LL-70BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in embedded systems solutions, including microcontrollers, connectivity chips, and memory products.
The CY62177EV18 MoBL® SRAM product line was engineered specifically for ultra-low-power portable electronics-emphasizing milliamp-level active current, microamp standby, and seamless integration with 1.8 V SoCs in space-constrained mobile platforms.
FAQ
What is the function of the BYTE pin on CY62177EV18LL-70BAXIT?
The BYTE pin configures memory organization: tied to VCC for 2 M × 16 mode (standard 16-bit data bus), or to VSS for 4 M × 8 mode (extended 8-bit addressing). In 4 M × 8 mode, Pin 45 becomes A21, and BHE/BLE/I/O8–I/O14 are unused. This pin must never be left floating-it directly determines address decoding and data bus width behavior.
Can CY62177EV18LL-70BAXIT operate reliably at 1.65 V?
Yes. The device is fully specified and tested across 1.65 V–2.25 V, including 70 ns access time, 3 µA standby current, and VIH/VIL thresholds, at the full industrial temperature range. All AC and DC parameters in the datasheet are guaranteed at VCC = 1.65 V, making it suitable for direct connection to 1.8 V LDO outputs with ±10% tolerance.
How does automatic power-down activate, and what is its impact on system design?
Automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH-reducing ICC to ≤25 µA without software intervention. This eliminates the need for explicit power-state coordination in firmware, simplifying low-power mode entry in RTOS-based applications and reducing BOM count by removing external power controllers.
Is Pin 13 (DNU) required to be left unconnected in all configurations?
Yes. Pin 13 is designated Do-Not-Use (DNU) in the 48-pin TSOP I package and must remain electrically floating-no pull-up, pull-down, or connection to VCC/VSS. Connecting it may cause undefined behavior or functional failure, as confirmed in Cypress Application Note AN13842 and the device's official pinout documentation.
CY62177EV18LL-70BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62177EV18LL-70BAXIT FAQ
1.How can I place an order for CY62177EV18LL-70BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177EV18LL-70BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177EV18LL-70BAXIT reliable?
The price and inventory of CY62177EV18LL-70BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177EV18LL-70BAXIT is usually 5 days.
3.What payment methods are accepted for CY62177EV18LL-70BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177EV18LL-70BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177EV18LL-70BAXIT?
CY62177EV18LL-70BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177EV18LL-70BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177EV18LL-70BAXIT?
For technical support, including CY62177EV18LL-70BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177EV18LL-70BAXIT requirements.
6.How does Aetrix verify that CY62177EV18LL-70BAXIT is sourced from the original manufacturer or authorized distributors?
All CY62177EV18LL-70BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177EV18LL-70BAXIT meets industry standards.
7.What is the process for return or replacement of CY62177EV18LL-70BAXIT?
All CY62177EV18LL-70BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62177EV18LL-70BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177EV18LL-70BAXIT part is unused and in its original packaging.
Return procedure for CY62177EV18LL-70BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62177EV18LL-70BAXIT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
