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Infineon Technologies CY62177EV30LL-55BAXI
- Part No.:
- CY62177EV30LL-55BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY62177EV30LL-55BAXI.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:488
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Product details
Overview
CY62177EV30LL-55BAXI from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® CMOS static RAM organized as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features ultra-low standby current (3 µA typ), automatic power-down on address inactivity, and dual chip enables (CE1/CE2) for seamless memory expansion. It is deployed in battery-constrained portable systems including cellular handsets and handheld medical monitors.
For engineers reviewing the CY62177EV30LL-55BAXI datasheet, CY62177EV30LL-55BAXI pinout, CY62177EV30LL-55BAXI application, or CY62177EV30LL-55BAXI equivalent, key selection criteria include configurable data bus width (16-bit/8-bit), TSOP I package compatibility, automatic CE-based power-down behavior, and guaranteed industrial temperature operation (–40°C to +85°C).
Technical Context
This SRAM implements a dual-bank byte-enable architecture with independent BHE and BLE controls, enabling selective high- or low-byte writes without affecting adjacent bytes. Its automatic power-down logic triggers when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - reducing standby current by >99% versus active mode.
The device supports two distinct memory configurations via external BYTE pin biasing: tying BYTE to VCC selects 2M × 16 mode (A0–A20 address space), while tying BYTE to VSS configures 4M × 8 mode (A0–A21, with A21 on Pin 45). In 4M × 8 mode, BHE, BLE, and I/O8–I/O14 are unused.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2M × 16 or 4M × 8 configuration) |
| Access Time | 55 ns - guarantees deterministic read latency for real-time embedded control loops |
| Supply Voltage | 2.2 V to 3.6 V - compatible with Li-ion battery discharge curve and 3.3 V system rails |
| Standby Current | 3 µA typical - extends battery life in always-on sensor nodes and sleep-mode peripherals |
| Active Current | 10 mA at 1 MHz - enables low-power burst reads in intermittent data logging applications |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade deployment without derating |
| Data Retention Voltage | 1.5 V minimum - maintains memory state during brown-out or backup battery operation |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting 2M-word (16-bit) or 4M-word (8-bit) addressing |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW in 16-bit mode or active in 8-bit mode |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW; unused in 4M × 8 configuration |
| CE1, CE2 | Chip Enable Controls | Complementary enables: CE1 LOW + CE2 HIGH activates device; either CE1 HIGH or CE2 LOW forces standby |
| OE | Output Enable | Controls output drivers only; does not affect internal power state or data retention |
| WE | Write Enable | Active-LOW signal initiating write cycle; timing-critical for setup/hold compliance |
| BHE, BLE | Byte High/Low Enable | Selective byte write control; both HIGH disables I/O drivers and triggers auto-power-down |
| BYTE | Bus Width Configuration | Must be tied to VCC for 2M × 16 mode or VSS for 4M × 8 mode; determines A21 usage and pin allocation |
| Pin 13 | DNU (Do Not Use) | Must remain floating; connection violates functional specification and may cause undefined behavior |
Key Features
| Feature | Design Value |
|---|---|
| Configurable Bus Width | Single device supports 16-bit microcontroller interfaces or 8-bit legacy controllers via BYTE pin strap |
| Automatic Power-Down | Reduces ICC to ≤25 µA without software intervention when CE/BHE/BLE inactive - eliminates firmware overhead |
| Ultra-Low Standby Current | 3 µA typical at 25°C ensures multi-year battery life in energy-harvesting IoT endpoints |
| Industrial Temperature Range | –40°C to +85°C operation validated across full voltage range (2.2–3.6 V), no derating required |
| CMOS-Compatible Interface | VIH/VIL thresholds scale with VCC, enabling interoperability with mixed-voltage SoC designs |
Applications
| Cellular Handset Baseband | Portable Medical Monitor |
|---|---|
Use Scenario: Stores real-time sensor buffers and protocol stack context during GSM/UMTS idle cycles. IC Role / Device Role / Timing Role: Low-latency, low-power SRAM providing scratchpad memory for baseband DSPs with fast wake-from-sleep response. Use Value: 55 ns access time and 3 µA standby current enable sub-second wake-up and >72-hour battery runtime in standby mode. | Use Scenario: Holds ECG waveform history and calibration coefficients in battery-powered patient monitors. IC Role / Device Role / Timing Role: Nonvolatile-retentive SRAM serving as deterministic data buffer between analog front-end and ARM Cortex-M4 host. Use Value: Automatic CE power-down cuts background power by 99%, extending single-charge operation to >14 days. |
| Industrial PLC I/O Module | Smart Meter Data Logger |
Use Scenario: Caches digital input/output states and diagnostic logs in DIN-rail mounted automation modules. IC Role / Device Role / Timing Role: Industrial-grade SRAM interfacing directly with FPGA-configured I/O controllers under wide ambient temperature swings. Use Value: –40°C to +85°C qualification and 2.2–3.6 V operation ensure reliable data capture across uncontrolled cabinet environments. | Use Scenario: Buffers hourly consumption snapshots and tariff tables in ANSI C12.22-compliant electricity meters. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving metering data during AC mains dropout, supported by 1.5 V data retention voltage. Use Value: 1.5 V VDR allows retention using supercapacitor backup, eliminating need for coin-cell batteries and associated maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-density, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204816BLL-10MLI | 10 ns faster access (45 ns), but higher standby current (15 µA typ) and narrower VCC range (2.7–3.6 V) | Requires stable 3.3 V rail; unsuitable for direct Li-ion (2.7–4.2 V) integration without regulation | Select when system prioritizes speed over battery life and operates exclusively at 3.3 V |
| AS6C4008-55PCN | Same 55 ns speed and 2.2–3.6 V range, but lacks automatic power-down and uses 44-pin SOJ package | No CE-triggered auto-standby; requires explicit firmware control of CE for power savings | Select when board layout constraints favor SOJ or when firmware already manages CE sequencing |
Compared with IS61WV204816BLL-10MLI and AS6C4008-55PCN, CY62177EV30LL-55BAXI uniquely combines 55 ns speed, 2.2–3.6 V flexibility, and hardware-driven power-down - making it optimal for battery-operated systems needing zero-software power management.
Availability
CY62177EV30LL-55BAXI is available at Aetrix Electronics and suitable for cellular handset design, portable medical instrumentation, industrial PLC I/O modules, and smart meter data loggers requiring stable component supply across extended product lifecycles.
Supply support for CY62177EV30LL-55BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions.
CY62177EV30LL-55BAXI belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and rapid wake-from-sleep performance are critical.
FAQ
What is the function of the BYTE pin on CY62177EV30LL-55BAXI?
The BYTE pin configures the device's memory organization: tying it to VCC selects 2M × 16 mode (A0–A20), while tying it to VSS enables 4M × 8 mode (A0–A21, with A21 on Pin 45). In 4M × 8 mode, BHE, BLE, and I/O8–I/O14 are unused. Pin 13 must remain floating regardless of configuration.
Does CY62177EV30LL-55BAXI support true data retention during power loss?
Yes - it retains data down to 1.5 V VCC (VDR), with ICCDR ≤20 µA. This enables use with supercapacitor or small backup battery circuits. Retention is maintained when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH, independent of OE or WE state.
How does automatic power-down reduce power consumption?
When CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH, internal circuitry enters a deep standby state drawing ≤25 µA. This occurs without software involvement and reduces active-mode current (10 mA at 1 MHz) by >99%, significantly extending battery life in intermittently active systems.
Can CY62177EV30LL-55BAXI be used in a 4M × 8 configuration with standard 8-bit microcontrollers?
Yes - configure BYTE = VSS to enable 4M × 8 mode. Address lines A0–A21 become active (A21 appears on Pin 45), and only I/O0–I/O7 are functional. BHE, BLE, and I/O8–I/O14 must be left unconnected. The device then behaves as a standard 8-bit parallel SRAM with CE1/CE2/OE/WE control.
CY62177EV30LL-55BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.7V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62177EV30LL-55BAXI FAQ
1.How can I place an order for CY62177EV30LL-55BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177EV30LL-55BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177EV30LL-55BAXI reliable?
The price and inventory of CY62177EV30LL-55BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177EV30LL-55BAXI is usually 5 days.
3.What payment methods are accepted for CY62177EV30LL-55BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177EV30LL-55BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177EV30LL-55BAXI?
CY62177EV30LL-55BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177EV30LL-55BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177EV30LL-55BAXI?
For technical support, including CY62177EV30LL-55BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177EV30LL-55BAXI requirements.
6.How does Aetrix verify that CY62177EV30LL-55BAXI is sourced from the original manufacturer or authorized distributors?
All CY62177EV30LL-55BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177EV30LL-55BAXI meets industry standards.
7.What is the process for return or replacement of CY62177EV30LL-55BAXI?
All CY62177EV30LL-55BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62177EV30LL-55BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177EV30LL-55BAXI part is unused and in its original packaging.
Return procedure for CY62177EV30LL-55BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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