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Infineon Technologies CY62177EV30LL-55BAXIT
- Part No.:
- CY62177EV30LL-55BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY62177EV30LL-55BAXIT.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,990
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Product details
Overview
CY62177EV30LL-55BAXIT from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® CMOS static RAM organized as 2M × 16 or 4M × 8, operating at 55 ns access time across 2.2–3.6 V supply. It delivers ultra-low standby current (3 µA typ), active current of 10 mA at 1 MHz, and automatic power-down on deselect. Used in battery-sensitive portable systems including cellular handsets and handheld medical devices.
For engineers reviewing the CY62177EV30LL-55BAXIT datasheet, CY62177EV30LL-55BAXIT pinout, CY62177EV30LL-55BAXIT application, or CY62177EV30LL-55BAXIT equivalent, key selection factors include configurable x16/x8 organization, TSOP I package compatibility, byte-enable control (BHE/ BLE), DNU pin handling, and data retention down to 1.5 V.
Technical Context
This SRAM implements dual chip enable (CE1/CE2) logic with independent byte enable (BHE/ BLE) for selective 8-bit or 16-bit access. Its automatic power-down mode activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH-reducing standby current by >99% versus active operation.
The device supports two memory configurations via the BYTE pin: tied to VCC for 2M × 16 mode (A0–A20 address space), or to VSS for 4M × 8 mode (A0–A21, with A21 on Pin 45). In x8 mode, BHE, BLE, and I/O8–I/O14 are unused.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2M × 16 or 4M × 8 configuration) |
| Access Time | 55 ns - guarantees deterministic read/write timing for high-speed microcontroller interfaces |
| Supply Voltage | 2.2 V to 3.6 V - compatible with Li-ion battery discharge profiles and low-voltage SoC I/O domains |
| Standby Current | 3 µA typical - enables multi-week battery life in always-on sensor nodes |
| Active Current | 10 mA at 1 MHz - balances performance and energy efficiency in burst-mode operation |
| Data Retention Voltage | 1.5 V minimum - preserves memory contents during brown-out or sleep-state voltage scaling |
| Package | 48-pin TSOP I - surface-mount compatible with compact PCB layouts and automated assembly |
Pinout & Package
48-pin Thin Small Outline Package (TSOP I), 12 × 20 mm body, 0.5 mm pitch. Pin #13 is DNU (Do Not Use) and must remain floating. BYTE pin (Pin 46) configures memory organization: VCC = 2M × 16, VSS = 4M × 8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting 2M-word (x16) or 4M-word (x8) addressing |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path active when BLE = LOW in x16 mode or all modes in x8 |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path active only when BHE = LOW in x16 mode |
| CE1, CE2 | Chip Enable Inputs | Complementary enables: CE1 LOW + CE2 HIGH selects device; either condition deselected triggers auto-power-down |
| OE | Output Enable | Controls output drivers: LOW enables read data drive; HIGH forces I/O pins to high-Z |
| WE | Write Enable | LOW initiates write cycle; timing referenced to falling edge for setup/hold compliance |
| BHE, BLE | Byte Enable Inputs | Select high/low byte independently-enables 8-bit access in 16-bit bus systems or partial writes |
| BYTE | Memory Organization Select | VCC → 2M × 16 (A0–A20); VSS → 4M × 8 (A0–A21, Pin 45 = A21) |
Key Features
| Feature | Design Value |
|---|---|
| Configurable x16/x8 organization | Single part supports two memory maps via external BYTE pin bias-reduces BOM count and simplifies design reuse |
| Ultra-low 3 µA standby current | Enables >1-year battery life in intermittently active IoT endpoints without compromising wake latency |
| Automatic power-down on deselect | Hardware-triggered transition to sub-µA state within 55 ns-no firmware overhead or timing-critical sequencing required |
| Dual chip enable (CE1/CE2) | Supports hierarchical memory decoding in multi-chip systems and eliminates need for external gate logic |
| CMOS-compatible I/O levels | Full 2.2–3.6 V VIH/VIL range ensures interoperability with modern low-voltage MCUs and FPGAs |
Applications
| Cellular Handset Baseband | Portable Medical Monitor |
|---|---|
Use Scenario: Real-time buffering of voice codec data and protocol stack packets during RF transmission bursts. IC Role / Device Role / Timing Role: High-speed, low-power SRAM providing scratchpad memory for DSP co-processor with <55 ns read latency. Use Value: Enables 20% longer talk time per charge by reducing active and standby current versus legacy SRAMs. | Use Scenario: Storing real-time ECG waveform samples and alarm thresholds in battery-powered wearable monitors. IC Role / Device Role / Timing Role: Non-volatile-retentive buffer holding critical patient data during brief power interruptions. Use Value: Guarantees data integrity down to 1.5 V supply-eliminates need for backup capacitors or supercaps. |
| Industrial Handheld Scanner | Smart Meter Data Logger |
Use Scenario: Capturing and preprocessing 2D barcode image frames before compression and wireless upload. IC Role / Device Role / Timing Role: Burst-mode frame buffer interfacing directly to image sensor controller via 16-bit parallel bus. Use Value: Configurable x16/x8 mode allows same footprint for different resolution sensors-reducing NRE cost. | Use Scenario: Logging hourly consumption data and firmware update staging in utility meters with 10+ year battery life. IC Role / Device Role / Timing Role: Low-leakage SRAM retaining timestamped records during deep-sleep cycles between reads. Use Value: 3 µA typical ISB2 meets stringent IEC 62056-21 metering standards for annual self-discharge budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204816BLL-10MLI | 10 ns faster access (45 ns), wider VCC range (2.2–3.6 V), but higher standby current (15 µA typ) | Preferred where system clock rate exceeds 20 MHz and power budget allows ~5× higher ISB | Select for speed-critical embedded controllers needing minimal read latency; avoid in ultra-low-power designs |
| AS6C4008-55TIN | Same 55 ns speed and 2.2–3.6 V range, but no automatic power-down and no BYTE-configurable organization | Suitable for fixed-x8 systems with simple CE-only control and no need for dynamic memory mapping | Choose when board space permits larger SOJ package and design does not require byte-select flexibility or auto-sleep |
Compared with IS61WV204816BLL-10MLI and AS6C4008-55TIN, CY62177EV30LL-55BAXIT uniquely combines 55 ns timing, sub-5 µA standby, and hardware-configurable x16/x8 organization-making it optimal for portable systems requiring both performance headroom and multi-year battery life.
Availability
CY62177EV30LL-55BAXIT is available at Aetrix Electronics and suitable for cellular handset baseband, portable medical monitors, and industrial handheld scanners requiring stable component supply and long-term lifecycle support.
Supply support for CY62177EV30LL-55BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.
CY62177EV30 belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended runtime and rapid wake-from-sleep response are critical.
FAQ
What is the function of the BYTE pin on CY62177EV30LL-55BAXIT?
The BYTE pin (Pin 46) configures memory organization: tying it to VCC selects 2M × 16 mode (address range A0–A20); tying it to VSS selects 4M × 8 mode (A0–A21, with A21 on Pin 45). In x8 mode, BHE, BLE, and I/O8–I/O14 are unused and must be left unconnected or pulled to valid logic levels per datasheet guidance.
How does automatic power-down work, and what triggers it?
Automatic power-down activates when any of these conditions occur: CE1 HIGH, CE2 LOW, or both BHE and BLE HIGH. This reduces ICC to ≤25 µA without software intervention. The transition occurs within 55 ns of signal change, and full operation resumes within 55 ns after re-enabling CE1/CE2-no initialization sequence required.
Can CY62177EV30LL-55BAXIT operate reliably at 2.2 V?
Yes. The device is fully specified from 2.2 V to 3.6 V, including all AC timing (55 ns max tRC), DC parameters (VIH min = 1.8 V at VCC = 2.2 V), and power metrics (ISB2 ≤25 µA). Data retention remains guaranteed down to 1.5 V, enabling graceful operation during battery sag or brown-out events.
Is Pin 13 (DNU) required to be left floating in all configurations?
Yes. Pin 13 is designated DNU (Do Not Use) in both 2M × 16 and 4M × 8 configurations. It must remain electrically floating-neither connected to VCC, VSS, nor any signal. Connecting it may cause undefined behavior or increased leakage, as confirmed in the official datasheet revision *Q section "Pin Configurations" and "Maximum Ratings".
CY62177EV30LL-55BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.7V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62177EV30LL-55BAXIT FAQ
1.How can I place an order for CY62177EV30LL-55BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177EV30LL-55BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177EV30LL-55BAXIT reliable?
The price and inventory of CY62177EV30LL-55BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177EV30LL-55BAXIT is usually 5 days.
3.What payment methods are accepted for CY62177EV30LL-55BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177EV30LL-55BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177EV30LL-55BAXIT?
CY62177EV30LL-55BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177EV30LL-55BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177EV30LL-55BAXIT?
For technical support, including CY62177EV30LL-55BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177EV30LL-55BAXIT requirements.
6.How does Aetrix verify that CY62177EV30LL-55BAXIT is sourced from the original manufacturer or authorized distributors?
All CY62177EV30LL-55BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177EV30LL-55BAXIT meets industry standards.
7.What is the process for return or replacement of CY62177EV30LL-55BAXIT?
All CY62177EV30LL-55BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62177EV30LL-55BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177EV30LL-55BAXIT part is unused and in its original packaging.
Return procedure for CY62177EV30LL-55BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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