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Infineon Technologies CY62177EV30LL-55ZXI
- Part No.:
- CY62177EV30LL-55ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62177EV30LL-55ZXI.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:346
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Product details
Overview
CY62177EV30LL-55ZXI from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® CMOS static RAM organized as 2M × 16 or 4M × 8, operating at 55 ns access time across 2.2–3.6 V supply. It delivers ultra-low standby current (3 µA typ), active current of 10 mA at 1 MHz, and automatic power-down on deselect. It is used in battery-sensitive portable systems including cellular handsets and handheld medical monitors.
For engineers reviewing the CY62177EV30LL-55ZXI datasheet, CY62177EV30LL-55ZXI pinout, CY62177EV30LL-55ZXI application, or CY62177EV30LL-55ZXI equivalent, key selection criteria include configurable bus width (16-bit/8-bit), industrial temperature range (–40°C to +85°C), TSOP I package compatibility, low-voltage retention capability (1.5 V), and dual chip enable architecture for hierarchical memory mapping.
Technical Context
This SRAM implements a dual-bank addressable array with independent byte enables (BHE/ BLE) and two complementary chip enables (CE1/ CE2) enabling selective bank activation and seamless memory expansion. Its automatic power-down logic triggers when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - reducing standby current by >99% versus active mode.
The device supports two physical configurations: 2M × 16 mode (BYTE tied to VCC) and 4M × 8 mode (BYTE tied to VSS), with Pin 45 repurposed as A21 in the latter. Pin 13 is DNU and must remain floating. All I/Os enter high-Z state during deselect, OE HIGH, write cycles, or simultaneous BHE/ BLE deassertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2M × 16 or 4M × 8 configuration) |
| Access Time | 55 ns - guarantees deterministic read/write timing for real-time embedded control loops |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with Li-ion battery discharge profiles and mixed-voltage SoC interfaces |
| Standby Current | 3 µA typical - enables multi-week battery life in always-on sensor nodes |
| Active Current | 10 mA at 1 MHz - balances performance and energy efficiency in burst-mode data logging |
| Data Retention Voltage | 1.5 V minimum - preserves memory contents during brown-out or sleep-state voltage scaling |
| Operating Temperature | –40°C to +85°C - qualified for industrial and automotive cabin electronics environments |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word or 4M-word addressing; A21 enabled only in 4M×8 mode via Pin 45 |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path active when BLE = LOW; high-Z when deselected or during write |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path active when BHE = LOW; unused in 4M×8 mode |
| CE1, CE2 | Complementary Chip Enables | CE1 LOW + CE2 HIGH enables device; CE1 HIGH or CE2 LOW forces automatic power-down |
| OE | Output Enable | Controls output drivers only; does not affect internal power state - outputs go high-Z when OE = HIGH |
| WE | Write Enable | Active-LOW signal initiating write cycle; combined with CE and BHE/ BLE determines byte-level write target |
| BHE, BLE | Byte High/Low Enables | Select 16-bit or 8-bit operation granularity; both HIGH disables all I/Os and triggers power-down |
| BYTE | Bus Width Configuration | Tied to VCC for 2M×16 mode; tied to VSS for 4M×8 mode - defines memory organization at power-up |
| Pin 13 | DNU (Do Not Use) | Must be left floating; connection causes undefined behavior or functional failure |
Key Features
| Feature | Design Value |
|---|---|
| Configurable Memory Organization | Single device supports either 2M × 16 or 4M × 8 layout via BYTE pin strap - eliminates BOM variants for dual-platform designs |
| Automatic Power-Down | Reduces ICC to ≤25 µA without external control logic when CE1/CE2/BHE/ BLE indicate idle - cuts system standby power unconditionally |
| Ultra-Low-Voltage Data Retention | Maintains stored data down to 1.5 V VCC - enables graceful degradation during battery sag and supports hibernation modes |
| CMOS-Compatible Interface | Full TTL/CMOS logic thresholds (VIH ≥ 1.8 V @ 2.2 V VCC) ensure interoperability with 1.8 V, 2.5 V, and 3.3 V microcontrollers |
| High-Z Output Control | I/Os enter high-impedance state under four independent conditions (deselect, OE HIGH, BHE/ BLE HIGH, write) - prevents bus contention in shared-memory systems |
Applications
| Portable Medical Devices | Industrial HMI Terminals |
|---|---|
|
Use Scenario: Battery-powered glucose meters and pulse oximeters requiring non-volatile data buffering between sensor sampling bursts. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and real-time waveform storage with deterministic 55 ns access. Use Value: 3 µA standby current extends single-cell CR2032 battery life beyond 12 months in sleep mode. |
Use Scenario: Ruggedized touch-panel HMIs deployed in factory automation cabinets with wide ambient temperature swings. IC Role / Device Role / Timing Role: Off-chip SRAM for ARM Cortex-M7-based display controllers managing frame buffers and command queues. Use Value: –40°C to +85°C rating and 2.2–3.6 V operation ensure reliable boot and runtime memory access across thermal cycling. |
| Wireless Sensor Nodes | Automotive Infotainment Gateways |
|
Use Scenario: LoRaWAN edge nodes aggregating environmental sensor data before scheduled RF transmission. IC Role / Device Role / Timing Role: Temporary storage for timestamped sensor logs prior to encryption and packetization. Use Value: Automatic power-down on CE deassertion reduces average system current to <10 µA during 99% of duty cycle. |
Use Scenario: In-vehicle infotainment gateways bridging CAN FD, Ethernet AVB, and USB subsystems with local buffer memory. IC Role / Device Role / Timing Role: Shared memory resource for inter-processor communication between application and safety cores. Use Value: Dual CE architecture allows independent enable/disable control per subsystem, minimizing cross-domain interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-density low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204816BLL-10MLI | 44-pin TSOP II, 10 ns faster (45 ns), 2.5–3.6 V only, no BYTE pin - fixed 2M×16 organization | Lacks 4M×8 mode and 2.2 V support; requires redesign for ultra-low-voltage operation | Choose for higher-speed systems where 2.2 V operation is unnecessary and board space permits larger TSOP II footprint |
| AS6C4008-55ZIN | 48-pin TSOP I, same 55 ns speed and 2.2–3.6 V range, but no automatic power-down - ISB = 200 µA typical | Higher standby current limits battery life in always-on applications; no CE1/CE2 dual-enable flexibility | Choose only if cost sensitivity outweighs power budget constraints and memory expansion topology is simple |
Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, CY62177EV30LL-55ZXI uniquely combines 2.2 V operability, dual-bus-width configurability, and sub-10 µA automatic standby - making it the sole option for compact, battery-constrained, multi-platform designs requiring guaranteed low-power retention.
Availability
CY62177EV30LL-55ZXI is available at Aetrix Electronics and suitable for portable medical devices, industrial HMI terminals, and wireless sensor nodes requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature compliance.
Supply support for CY62177EV30LL-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing reliability, low-power innovation, and automotive-grade qualification.
CY62177EV30LL-55ZXI belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for energy-constrained portable and embedded systems demanding extended runtime without sacrificing speed or density.
FAQ
What is the function of the BYTE pin on CY62177EV30LL-55ZXI?
The BYTE pin configures memory organization: tying it to VCC selects 2M × 16 mode; tying it to VSS enables 4M × 8 mode. In the latter, Pin 45 becomes A21 and BHE/ BLE/ I/O8–I/O14 are unused. This pin must never be left floating - incorrect strapping causes undefined memory mapping behavior.
Can CY62177EV30LL-55ZXI operate at 1.8 V?
No. The absolute minimum supply voltage is 2.2 V per datasheet specifications. Operation below this violates DC characteristics, risks data corruption, and invalidates timing parameters including the 55 ns access time. For 1.8 V systems, consider Infineon's newer MoBL-3 series with extended low-voltage support.
How does automatic power-down activate, and what is its impact on data retention?
Automatic power-down activates when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH. It reduces ICC to ≤25 µA while preserving data as long as VCC remains ≥1.5 V. No external control signal is needed - the feature is fully hardware-managed and transparent to software.
Is Pin 13 required to be connected, and what happens if it is grounded?
Pin 13 is designated DNU (Do Not Use) and must remain unconnected and floating. Grounding or connecting it to any voltage rail may cause unpredictable read/write failures, increased leakage, or complete device malfunction - the datasheet explicitly prohibits any connection to this pin.
CY62177EV30LL-55ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.7V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62177EV30LL-55ZXI FAQ
1.How can I place an order for CY62177EV30LL-55ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177EV30LL-55ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177EV30LL-55ZXI reliable?
The price and inventory of CY62177EV30LL-55ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177EV30LL-55ZXI is usually 5 days.
3.What payment methods are accepted for CY62177EV30LL-55ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177EV30LL-55ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177EV30LL-55ZXI?
CY62177EV30LL-55ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177EV30LL-55ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177EV30LL-55ZXI?
For technical support, including CY62177EV30LL-55ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177EV30LL-55ZXI requirements.
6.How does Aetrix verify that CY62177EV30LL-55ZXI is sourced from the original manufacturer or authorized distributors?
All CY62177EV30LL-55ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177EV30LL-55ZXI meets industry standards.
7.What is the process for return or replacement of CY62177EV30LL-55ZXI?
All CY62177EV30LL-55ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62177EV30LL-55ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177EV30LL-55ZXI part is unused and in its original packaging.
Return procedure for CY62177EV30LL-55ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62177EV30LL-55ZXI Tags
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