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Infineon Technologies CY62177EV30LL-55ZXIT
- Part No.:
- CY62177EV30LL-55ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62177EV30LL-55ZXIT.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,356
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Product details
Overview
CY62177EV30LL-55ZXIT from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® CMOS static RAM organized as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features ultra-low standby current (3 µA typ), automatic power-down on address inactivity, and dual chip enables (CE1/CE2) for seamless memory expansion. Used in battery-constrained portable systems including cellular handsets and handheld medical monitors.
For engineers reviewing the CY62177EV30LL-55ZXIT datasheet, CY62177EV30LL-55ZXIT pinout, CY62177EV30LL-55ZXIT application, or CY62177EV30LL-55ZXIT equivalent, key selection criteria include configurable data bus width (16-bit/8-bit), TSOP I package compatibility, industrial temperature range (–40°C to +85°C), low-voltage operation down to 2.2 V, and verified data retention at 1.5 V.
Technical Context
This SRAM implements dual-bank byte enable logic (BHE/BLE) with independent high/low byte write control and supports both 2M × 16 and 4M × 8 configurations via BYTE pin biasing (VCC for 16-bit, VSS for 8-bit). Address range spans A0–A20 (21-bit), with A21 available only in 4M × 8 mode on Pin 45 of TSOP I.
Power management includes three low-power states: active (10 mA @ 1 MHz), automatic CE-based power-down (ISB2 = 3 µA typ), and data retention (ICCDR ≤ 20 µA @ VDR = 1.5 V). Tri-state output control is governed by CE1, CE2, OE, BHE, and BLE with guaranteed tHZOE ≤ 18 ns and tLZCE ≥ 10 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2M × 16 or 4M × 8 configuration) |
| Access Time | 55 ns - guarantees deterministic read latency in real-time embedded control loops |
| Supply Voltage | 2.2 V to 3.6 V - compatible with Li-ion battery discharge profile and 3.3 V system rails |
| Standby Current | 3 µA typical - enables multi-week battery life in always-on sensor nodes |
| Operating Temperature | –40°C to +85°C - qualified for industrial and automotive cabin applications |
| Data Retention Voltage | 1.5 V minimum - preserves memory contents during brown-out or backup battery operation |
| Package | 48-pin TSOP I - surface-mount compatible with standard reflow profiles and board space constraints |
Pinout & Package
48-pin Thin Small Outline Package (TSOP I), 12 × 20 mm body, 0.5 mm pitch, JEDEC MO-153 compliant. Pin #13 is DNU (Do Not Use) and must remain floating. BYTE pin selects memory organization: tied to VCC for 2M × 16 mode, VSS for 4M × 8 mode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting full 2M-word or 4M-word addressing; A21 appears only in 4M × 8 mode on Pin 45 |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW; unused in 4M × 8 configuration |
| CE1, CE2 | Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 provide dual-enable logic for hierarchical memory decoding and bank isolation |
| OE | Output Enable | Controls read-data output drive; HIGH forces I/O pins to high-Z regardless of CE state |
| WE | Write Enable | Active-LOW signal initiating write cycle; timing-critical for meeting tSD = 25 ns and tPWE = 40 ns |
| BHE, BLE | Byte Enable Inputs | Independent control of high/low byte writes; both HIGH places device in standby (ISB2 activation) |
| BYTE | Memory Organization Select | Configures device as 2M × 16 (BYTE = VCC) or 4M × 8 (BYTE = VSS); determines pin function mapping |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 10 mA @ 1 MHz and standby to 3 µA typ-enabling >100-hour runtime on coin-cell batteries |
| Automatic Power-Down on Address Inactivity | Detects static address bus and cuts power consumption by 99% without external control logic |
| Configurable Data Width (2M × 16 / 4M × 8) | Single part supports two memory map topologies via BYTE pin bias-reducing BOM count and layout variants |
| Dual Chip Enable (CE1/CE2) Logic | Enables clean hierarchical decoding across multiple SRAM banks without glue logic or address demuxers |
| Guaranteed Data Retention at 1.5 V | Maintains stored data during deep sleep or backup power modes-critical for nonvolatile context preservation |
Applications
| Portable Medical Devices | Industrial HMI Terminals |
|---|---|
|
Use Scenario: Real-time waveform buffering in handheld ECG monitors with intermittent wireless transmission. IC Role / Device Role / Timing Role: High-speed, low-power SRAM acting as acquisition FIFO between ADC and RF subsystem. Use Value: 55 ns access ensures no sample loss at 10 kSPS; 3 µA standby extends battery life beyond 72 hours per charge. |
Use Scenario: Local display frame buffer and command queue in panel-mounted PLC operator interfaces. IC Role / Device Role / Timing Role: Dual-port accessible memory storing GUI assets and user input buffers under deterministic RTOS scheduling. Use Value: TSOP I package allows compact PCB layout; industrial temp rating ensures reliability in factory-floor enclosures up to 85°C ambient. |
| Wireless Sensor Nodes | Automotive Cabin Controllers |
|
Use Scenario: Multi-sensor fusion node aggregating temperature, humidity, and motion data before BLE burst upload. IC Role / Device Role / Timing Role: Low-voltage SRAM holding pre-processed sensor vectors during sleep cycles. Use Value: 2.2 V min VCC supports operation down to end-of-life battery voltage; 1.5 V data retention preserves last valid reading during brown-out. |
Use Scenario: Memory for HVAC control logic and seat position presets in vehicle door modules. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM retaining user preferences across ignition cycles. Use Value: –40°C to +85°C rating meets automotive Grade 3 requirements; CE-controlled power-down minimizes quiescent draw in sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-55NLI | Same density (32 Mbit), 55 ns speed, but fixed 512K × 16 organization; no 4M × 8 mode; 2.5–3.6 V supply only | Lacks BYTE-configurable bus width; requires separate part numbers for 8-bit vs 16-bit systems | Select when 16-bit-only interface and tighter VCC tolerance are acceptable |
| ON Semiconductor NVSRAM NCS27000-55G | Nonvolatile SRAM with integrated EEPROM backup; 55 ns access but higher standby current (15 µA typ); same 2.2–3.6 V range | Provides automatic data retention on power loss-eliminates need for external backup capacitors or batteries | Select when data persistence across uncontrolled power cycles is mandatory |
Compared with IS62WV51216BLL-55NLI and NCS27000-55G, CY62177EV30LL-55ZXIT uniquely balances configurability (2M×16/4M×8), ultra-low 3 µA standby, and industrial temperature support-making it optimal for cost-sensitive, battery-powered designs where flexibility and power efficiency outweigh nonvolatility needs.
Availability
CY62177EV30LL-55ZXIT is available at Aetrix Electronics and suitable for portable medical devices, industrial HMI terminals, and wireless sensor nodes requiring stable component supply, long-term lifecycle assurance, and consistent TSOP I packaging.
Supply support for CY62177EV30LL-55ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing low-power, industrial-grade semiconductor solutions for embedded and automotive markets.
CY62177EV30LL-55ZXIT belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for energy-constrained portable electronics where microamp-level standby current and sub-60 ns access time are critical design requirements.
FAQ
What is the function of the BYTE pin on CY62177EV30LL-55ZXIT?
The BYTE pin configures memory organization: tying it to VCC enables 2M × 16 mode (standard), while tying it to VSS enables 4M × 8 mode. In 4M × 8 mode, Pin 45 becomes A21 and I/O8–I/O14, BHE, and BLE are unused. This pin must never be left floating-it must be actively biased to VCC or VSS per desired configuration.
Can CY62177EV30LL-55ZXIT operate reliably at 2.2 V?
Yes-CY62177EV30LL-55ZXIT is fully specified from 2.2 V to 3.6 V. At 2.2 V, VOH is guaranteed ≥2.0 V (IOH = –0.1 mA), VOL ≤0.4 V (IOL = 0.1 mA), and tRC remains 55 ns. This enables direct interfacing with 2.2 V logic families and operation across full Li-ion battery discharge (4.2 V → 2.2 V).
How does automatic power-down work, and what triggers it?
Automatic power-down activates when address inputs (A0–A20) remain static for >100 µs, reducing ICC to ISB2 (≤25 µA). It is triggered by CE1 HIGH or CE2 LOW or both BHE and BLE HIGH. No external control signal is needed-the circuit detects address stability internally and transitions to low-power state autonomously.
Is Pin 13 (DNU) required to be connected or left open?
Pin 13 is designated DNU (Do Not Use) and must be left electrically floating-neither connected to VCC, VSS, nor any signal. Connecting it risks undefined behavior or functional failure. The datasheet explicitly states this pin "must be left floating at all times to ensure proper application."
CY62177EV30LL-55ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.7V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62177EV30LL-55ZXIT FAQ
1.How can I place an order for CY62177EV30LL-55ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177EV30LL-55ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177EV30LL-55ZXIT reliable?
The price and inventory of CY62177EV30LL-55ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177EV30LL-55ZXIT is usually 5 days.
3.What payment methods are accepted for CY62177EV30LL-55ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177EV30LL-55ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177EV30LL-55ZXIT?
CY62177EV30LL-55ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177EV30LL-55ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177EV30LL-55ZXIT?
For technical support, including CY62177EV30LL-55ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177EV30LL-55ZXIT requirements.
6.How does Aetrix verify that CY62177EV30LL-55ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62177EV30LL-55ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177EV30LL-55ZXIT meets industry standards.
7.What is the process for return or replacement of CY62177EV30LL-55ZXIT?
All CY62177EV30LL-55ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62177EV30LL-55ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177EV30LL-55ZXIT part is unused and in its original packaging.
Return procedure for CY62177EV30LL-55ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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