Infineon Technologies CY62177G30-55BAXIT

Overview

CY62177G30-55BAXIT from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features ultra-low standby current (max 19 µA), TTL-compatible I/Os, and Byte Power-down mode for dynamic power savings in battery-backed systems.

For engineers reviewing the CY62177G30-55BAXIT datasheet, CY62177G30-55BAXIT pinout, CY62177G30-55BAXIT application, or CY62177G30-55BAXIT equivalent, key selection criteria include ECC-enabled data integrity for industrial controllers, TSOP I package compatibility with legacy PCB footprints, dual chip enable support for memory banking, and 1.5-V data retention during brownout conditions.

Technical Context

This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder logic integrated into the memory array path. Error detection and correction occur transparently during read cycles without CPU intervention, and no automatic write-back is performed upon correction - preserving deterministic timing behavior.

The device supports two distinct memory configurations via external BYTE pin control: when tied to VCC, it operates as a 2M × 16-bit device; when tied to VSS, it functions as a 4M × 8-bit device with A21 exposed on pin 45. Dual CE inputs (CE1/CE2) enable independent bank selection in multi-SRAM systems.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (Type I, 12.0 mm × 20.0 mm, 0.5 mm pitch). Pinout validated per Figure 2 and Figure 5 of Infineon document 002-24704 Rev. *C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, CY62177G30-55BAXIT uniquely delivers on-die ECC, 2.2–3.6 V operation, and automatic byte-triggered power-down - making it the sole option among the three for safety-critical, battery-constrained, or mixed-voltage industrial designs requiring guaranteed single-bit error resilience.

Availability

CY62177G30-55BAXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and railway signaling event loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62177G30-55BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and safety-critical focus.

CY62177G30 belongs to Infineon's MoBL® (Mobile Bit-Li) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where data integrity and extended battery life are mandatory design constraints.

FAQ

Does CY62177G30-55BAXIT support automatic error correction without CPU involvement?

Yes. The device performs single-bit error correction transparently during every read cycle using on-die ECC logic. No CPU polling, interrupt generation, or firmware intervention is required - correction occurs within the same access timing window specified in the datasheet.

Can CY62177G30-55BAXIT be used in a 4M × 8 configuration on a 2M × 16 PCB footprint?

Yes, but with hardware modification: tie the BYTE pin to VSS instead of VCC, and route A21 (pin 45) to the host controller. Unused pins (BHE, BLE, I/O8–I/O14) must be left floating. Signal integrity validation is required due to changed pin utilization and timing margins.

What is the functional difference between CY62177G30 and CY62177GE30?

CY62177GE30 includes an ERR output pin that asserts HIGH during single-bit error correction events; CY62177G30 omits this pin. Both share identical memory density, ECC functionality, timing, and power characteristics - ERR is the sole distinguishing feature.

Is the 19 µA max standby current tested or guaranteed across temperature?

The 19 µA maximum standby current (ISB2) is guaranteed by design at VCC = max and TA = 25 °C, per Note 13 in the datasheet. It is not 100% tested but is verified through process characterization and statistical modeling across the industrial temperature range.