Infineon Technologies CY62177G30-55ZXI
- Part No.:
- CY62177G30-55ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62177G30-55ZXI.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:3,646
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62177G30-55ZXI from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configured as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features ultra-low standby current (max 19 µA), TTL-compatible I/Os, and Byte Power-down mode for dynamic power savings. Used in industrial control modules requiring data integrity and low-power retention.
For engineers reviewing the CY62177G30-55ZXI datasheet, CY62177G30-55ZXI pinout, CY62177G30-55ZXI application, or CY62177G30-55ZXI equivalent, key selection criteria include ECC-enabled reliability, dual chip enable flexibility, TSOP I package compatibility, 55 ns timing compliance, and industrial-grade temperature support (–40°C to +85°C).
Technical Context
This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on every read cycle without external logic. Its Byte Power-down feature activates automatically when both BHE and BLE are deasserted-enabling sub-19 µA standby regardless of CE state.
The device supports two memory configurations via BYTE pin control: 2M × 16 (BYTE = VCC) or 4M × 8 (BYTE = VSS), with A21 exposed only in the latter mode. Dual CE inputs (CE1/CE2) provide hierarchical chip select for multi-device systems, while TTL-compatible voltage thresholds ensure interoperability with legacy controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2M × 16 or 4M × 8 configuration) |
| Access Time | 55 ns - guarantees deterministic read latency for real-time industrial firmware execution |
| Supply Voltage | 2.2 V to 3.6 V - enables direct interface with 2.5 V and 3.3 V microcontrollers without level shifters |
| Standby Current | Max 19 µA at VCC = 3.6 V - sustains battery-backed operation for >1 year on coin-cell power |
| ECC Function | Single-bit error correction per read - eliminates need for external error-handling firmware overhead |
| Operating Temperature | –40°C to +85°C - qualified for industrial automation and motor drive control environments |
| Package | 48-pin TSOP I - surface-mount compatible with standard reflow profiles and automated optical inspection |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, Pb-free, body size 12 mm × 20 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Inputs | 21-bit address bus supporting 2M-word (16-bit) or 4M-word (8-bit) addressing; A21 available only in 4M×8 mode |
| I/O0–I/O15 | Data Input/Output | 16-bit bidirectional data bus; byte-selectable via BHE/BLE for partial writes without read-modify-write cycles |
| CE1, CE2 | Dual Chip Enable | Active-Low hierarchical chip select: CE1 = LOW & CE2 = HIGH enables device; supports daisy-chained memory banks |
| WE, OE, BHE, BLE | Control Inputs | Standard SRAM control set: WE enables write, OE enables output, BHE/BLE gate upper/lower byte I/O paths independently |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply rail; no separate I/O voltage required - simplifies PCB power routing |
| BYTE | Configuration Input | Configures memory organization: tied to VCC for 2M×16 mode; tied to VSS for 4M×8 mode (exposes A21, disables BHE/BLE/I/O8–I/O14) |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-accelerated single-bit error correction per read cycle - reduces system-level FIT rate to <0.1 FIT/Mb without software intervention |
| Byte Power-down | Automatic transition to ultra-low-power standby when BHE and BLE are both inactive - eliminates need for external power management logic |
| Configurable Organization | Runtime-selectable 2M×16 or 4M×8 via BYTE pin - enables reuse of same footprint across multiple memory-width designs |
| TTL-Compatible I/O | VIL ≤ 0.6 V / VIH ≥ 2.0 V at 3.3 V - ensures reliable interfacing with legacy 5 V-tolerant microcontrollers and FPGAs |
| Industrial Temp Range | –40°C to +85°C operation with full AC/DC specs guaranteed - suitable for uncooled PLC backplanes and motor drive cabinets |
Applications
| Programmable Logic Controllers | Industrial HMI Terminals |
|---|---|
|
Use Scenario: Storing runtime variables, ladder logic state tables, and alarm history in DIN-rail mounted PLCs with no fan cooling. IC Role / Device Role / Timing Role: Primary working memory with ECC-protected data storage and deterministic 55 ns read access for scan-cycle execution. Use Value: Prevents silent data corruption in long-running control loops; Byte Power-down extends backup battery life during power-loss events. |
Use Scenario: Caching GUI assets and user input buffers in touch-based HMIs deployed in factory-floor environments. IC Role / Device Role / Timing Role: High-speed SRAM buffer between ARM Cortex-A53 SoC and display controller, supporting 60 Hz UI refresh. Use Value: TTL-compatible signaling avoids level-shifter components; 48-pin TSOP I footprint allows compact 2-layer PCB layout. |
| Motor Drive Control Boards | Smart Sensor Fusion Nodes |
|
Use Scenario: Holding real-time PWM duty cycle registers, current-sense calibration offsets, and fault log entries in servo drives. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed directly by DSP core during interrupt-driven current loop updates. Use Value: 55 ns access meets sub-1 µs control loop deadlines; ECC prevents corrupted torque commands due to EMI-induced bit flips. |
Use Scenario: Aggregating timestamped accelerometer, gyroscope, and temperature samples before edge inference processing. IC Role / Device Role / Timing Role: Buffered data staging area with error-resilient storage for sensor fusion algorithms running on RISC-V MCU. Use Value: 1.5 V data retention allows safe hold during brown-out conditions; 19 µA ISB2 enables multi-year battery operation in wireless nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204816BLL-10MLI | No integrated ECC; requires external error detection logic; 10 ns faster (10 ns access), but higher ICC (65 mA typical) | Lacks hardware ECC - increases firmware complexity and CPU load for safety-critical applications | Select only if speed is primary constraint and ECC can be implemented in software or FPGA logic |
| AS6C4008-55ZIN | 4-Mbit density (512K × 8); no ECC; 55 ns access; 3.3 V only; 44-pin SOJ package | Insufficient capacity for 32-Mbit workloads; incompatible pinout and voltage range limits use in mixed-voltage systems | Not suitable as drop-in replacement; only consider for non-ECC, lower-density legacy upgrades |
Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, CY62177G30-55ZXI uniquely delivers hardware ECC, industrial temperature support, and configurable memory width in a single 48-pin TSOP I package-reducing BOM count and validation effort for safety-aware industrial designs.
Availability
CY62177G30-55ZXI is available at Aetrix Electronics and suitable for programmable logic controllers, industrial HMI terminals, and motor drive control boards requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.
Supply support for CY62177G30-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and automotive qualifications.
CY62177G30 belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-reliability embedded systems where data integrity and extended battery life are critical design requirements.
FAQ
Does CY62177G30-55ZXI support automatic error correction without external logic?
Yes. The device integrates dedicated ECC encoder/decoder circuitry that performs single-bit error detection and correction transparently on every read cycle. No external logic, firmware, or memory controller support is required-the corrected data appears directly on the I/O bus within the 55 ns access window.
Can CY62177G30-55ZXI operate in 4M × 8 mode on a 2M × 16 PCB layout?
No. In 4M × 8 mode, pin 45 becomes address line A21, and pins BHE, BLE, and I/O8–I/O14 are unused and must be left floating. A 2M × 16 layout lacks routing for A21 and does not isolate the unused I/O pins, risking signal contention or undefined behavior.
What is the role of the BYTE pin, and how must it be terminated?
The BYTE pin configures memory organization: tie to VCC for 2M × 16 mode (default), or to VSS for 4M × 8 mode. It must be hard-wired-not left floating-as an undefined state may cause initialization failure or inconsistent addressing behavior across power cycles.
Is the 19 µA max standby current valid across the full industrial temperature range?
Yes. The ISB2 specification (max 19 µA) is guaranteed over –40°C to +85°C at VCC = 3.6 V. This value represents the worst-case leakage under automatic Byte Power-down activation and is validated by design-not just tested at 25°C-ensuring predictable battery life in uncontrolled thermal environments.
CY62177G30-55ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62177G30-55ZXI FAQ
1.How can I place an order for CY62177G30-55ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62177G30-55ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62177G30-55ZXI reliable?
The price and inventory of CY62177G30-55ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177G30-55ZXI is usually 5 days.
3.What payment methods are accepted for CY62177G30-55ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177G30-55ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62177G30-55ZXI?
CY62177G30-55ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62177G30-55ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62177G30-55ZXI?
For technical support, including CY62177G30-55ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177G30-55ZXI requirements.
6.How does Aetrix verify that CY62177G30-55ZXI is sourced from the original manufacturer or authorized distributors?
All CY62177G30-55ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177G30-55ZXI meets industry standards.
7.What is the process for return or replacement of CY62177G30-55ZXI?
All CY62177G30-55ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62177G30-55ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62177G30-55ZXI part is unused and in its original packaging.
Return procedure for CY62177G30-55ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62177G30-55ZXI Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

