Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62177G30-55ZXI

Part No.:
CY62177G30-55ZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY62177G30-55ZXI.pdf
Description:
IC SRAM 32MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,646

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62177G30-55ZXI from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configured as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features ultra-low standby current (max 19 µA), TTL-compatible I/Os, and Byte Power-down mode for dynamic power savings. Used in industrial control modules requiring data integrity and low-power retention.

For engineers reviewing the CY62177G30-55ZXI datasheet, CY62177G30-55ZXI pinout, CY62177G30-55ZXI application, or CY62177G30-55ZXI equivalent, key selection criteria include ECC-enabled reliability, dual chip enable flexibility, TSOP I package compatibility, 55 ns timing compliance, and industrial-grade temperature support (–40°C to +85°C).

Technical Context

This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on every read cycle without external logic. Its Byte Power-down feature activates automatically when both BHE and BLE are deasserted-enabling sub-19 µA standby regardless of CE state.

The device supports two memory configurations via BYTE pin control: 2M × 16 (BYTE = VCC) or 4M × 8 (BYTE = VSS), with A21 exposed only in the latter mode. Dual CE inputs (CE1/CE2) provide hierarchical chip select for multi-device systems, while TTL-compatible voltage thresholds ensure interoperability with legacy controllers.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 32 Mbit (2M × 16 or 4M × 8 configuration)
Access Time 55 ns - guarantees deterministic read latency for real-time industrial firmware execution
Supply Voltage 2.2 V to 3.6 V - enables direct interface with 2.5 V and 3.3 V microcontrollers without level shifters
Standby Current Max 19 µA at VCC = 3.6 V - sustains battery-backed operation for >1 year on coin-cell power
ECC Function Single-bit error correction per read - eliminates need for external error-handling firmware overhead
Operating Temperature –40°C to +85°C - qualified for industrial automation and motor drive control environments
Package 48-pin TSOP I - surface-mount compatible with standard reflow profiles and automated optical inspection

Pinout & Package

Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, Pb-free, body size 12 mm × 20 mm × 1.2 mm.

Pin/Terminal Circuit Role Design Meaning
A0–A20 Address Inputs 21-bit address bus supporting 2M-word (16-bit) or 4M-word (8-bit) addressing; A21 available only in 4M×8 mode
I/O0–I/O15 Data Input/Output 16-bit bidirectional data bus; byte-selectable via BHE/BLE for partial writes without read-modify-write cycles
CE1, CE2 Dual Chip Enable Active-Low hierarchical chip select: CE1 = LOW & CE2 = HIGH enables device; supports daisy-chained memory banks
WE, OE, BHE, BLE Control Inputs Standard SRAM control set: WE enables write, OE enables output, BHE/BLE gate upper/lower byte I/O paths independently
VCC, VSS Power Supply Single 2.2–3.6 V supply rail; no separate I/O voltage required - simplifies PCB power routing
BYTE Configuration Input Configures memory organization: tied to VCC for 2M×16 mode; tied to VSS for 4M×8 mode (exposes A21, disables BHE/BLE/I/O8–I/O14)

Key Features

Feature Design Value
Embedded ECC Hardware-accelerated single-bit error correction per read cycle - reduces system-level FIT rate to <0.1 FIT/Mb without software intervention
Byte Power-down Automatic transition to ultra-low-power standby when BHE and BLE are both inactive - eliminates need for external power management logic
Configurable Organization Runtime-selectable 2M×16 or 4M×8 via BYTE pin - enables reuse of same footprint across multiple memory-width designs
TTL-Compatible I/O VIL ≤ 0.6 V / VIH ≥ 2.0 V at 3.3 V - ensures reliable interfacing with legacy 5 V-tolerant microcontrollers and FPGAs
Industrial Temp Range –40°C to +85°C operation with full AC/DC specs guaranteed - suitable for uncooled PLC backplanes and motor drive cabinets

Applications

Programmable Logic Controllers Industrial HMI Terminals

Use Scenario: Storing runtime variables, ladder logic state tables, and alarm history in DIN-rail mounted PLCs with no fan cooling.

IC Role / Device Role / Timing Role: Primary working memory with ECC-protected data storage and deterministic 55 ns read access for scan-cycle execution.

Use Value: Prevents silent data corruption in long-running control loops; Byte Power-down extends backup battery life during power-loss events.

Use Scenario: Caching GUI assets and user input buffers in touch-based HMIs deployed in factory-floor environments.

IC Role / Device Role / Timing Role: High-speed SRAM buffer between ARM Cortex-A53 SoC and display controller, supporting 60 Hz UI refresh.

Use Value: TTL-compatible signaling avoids level-shifter components; 48-pin TSOP I footprint allows compact 2-layer PCB layout.

Motor Drive Control Boards Smart Sensor Fusion Nodes

Use Scenario: Holding real-time PWM duty cycle registers, current-sense calibration offsets, and fault log entries in servo drives.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed directly by DSP core during interrupt-driven current loop updates.

Use Value: 55 ns access meets sub-1 µs control loop deadlines; ECC prevents corrupted torque commands due to EMI-induced bit flips.

Use Scenario: Aggregating timestamped accelerometer, gyroscope, and temperature samples before edge inference processing.

IC Role / Device Role / Timing Role: Buffered data staging area with error-resilient storage for sensor fusion algorithms running on RISC-V MCU.

Use Value: 1.5 V data retention allows safe hold during brown-out conditions; 19 µA ISB2 enables multi-year battery operation in wireless nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV204816BLL-10MLI No integrated ECC; requires external error detection logic; 10 ns faster (10 ns access), but higher ICC (65 mA typical) Lacks hardware ECC - increases firmware complexity and CPU load for safety-critical applications Select only if speed is primary constraint and ECC can be implemented in software or FPGA logic
AS6C4008-55ZIN 4-Mbit density (512K × 8); no ECC; 55 ns access; 3.3 V only; 44-pin SOJ package Insufficient capacity for 32-Mbit workloads; incompatible pinout and voltage range limits use in mixed-voltage systems Not suitable as drop-in replacement; only consider for non-ECC, lower-density legacy upgrades

Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, CY62177G30-55ZXI uniquely delivers hardware ECC, industrial temperature support, and configurable memory width in a single 48-pin TSOP I package-reducing BOM count and validation effort for safety-aware industrial designs.

Availability

CY62177G30-55ZXI is available at Aetrix Electronics and suitable for programmable logic controllers, industrial HMI terminals, and motor drive control boards requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.

Supply support for CY62177G30-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and automotive qualifications.

CY62177G30 belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-reliability embedded systems where data integrity and extended battery life are critical design requirements.

FAQ

Does CY62177G30-55ZXI support automatic error correction without external logic?

Yes. The device integrates dedicated ECC encoder/decoder circuitry that performs single-bit error detection and correction transparently on every read cycle. No external logic, firmware, or memory controller support is required-the corrected data appears directly on the I/O bus within the 55 ns access window.

Can CY62177G30-55ZXI operate in 4M × 8 mode on a 2M × 16 PCB layout?

No. In 4M × 8 mode, pin 45 becomes address line A21, and pins BHE, BLE, and I/O8–I/O14 are unused and must be left floating. A 2M × 16 layout lacks routing for A21 and does not isolate the unused I/O pins, risking signal contention or undefined behavior.

What is the role of the BYTE pin, and how must it be terminated?

The BYTE pin configures memory organization: tie to VCC for 2M × 16 mode (default), or to VSS for 4M × 8 mode. It must be hard-wired-not left floating-as an undefined state may cause initialization failure or inconsistent addressing behavior across power cycles.

Is the 19 µA max standby current valid across the full industrial temperature range?

Yes. The ISB2 specification (max 19 µA) is guaranteed over –40°C to +85°C at VCC = 3.6 V. This value represents the worst-case leakage under automatic Byte Power-down activation and is validated by design-not just tested at 25°C-ensuring predictable battery life in uncontrolled thermal environments.

CY62177G30-55ZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
32Mbit
Memory Organization:
4M x 8, 2M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY62177G30-55ZXI FAQ

1.How can I place an order for CY62177G30-55ZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62177G30-55ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62177G30-55ZXI reliable?

The price and inventory of CY62177G30-55ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62177G30-55ZXI is usually 5 days.

3.What payment methods are accepted for CY62177G30-55ZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62177G30-55ZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62177G30-55ZXI?

CY62177G30-55ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62177G30-55ZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62177G30-55ZXI?

For technical support, including CY62177G30-55ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62177G30-55ZXI requirements.

6.How does Aetrix verify that CY62177G30-55ZXI is sourced from the original manufacturer or authorized distributors?

All CY62177G30-55ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62177G30-55ZXI meets industry standards.

7.What is the process for return or replacement of CY62177G30-55ZXI?

All CY62177G30-55ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62177G30-55ZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62177G30-55ZXI part is unused and in its original packaging.

Return procedure for CY62177G30-55ZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62177G30-55ZXI Tags

  • CY62177G30-55ZXI
  • CY62177G30-55ZXI PDF
  • CY62177G30-55ZXI Datasheet
  • CY62177G30-55ZXI Specifications
  • CY62177G30-55ZXI Images
  • Infineon Technologies
  • Infineon Technologies CY62177G30-55ZXI
  • Buy CY62177G30-55ZXI
  • CY62177G30-55ZXI Price
  • CY62177G30-55ZXI Distributor
  • CY62177G30-55ZXI Supplier
  • CY62177G30-55ZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER