Infineon Technologies CY62177GE30-55ZXI

Overview

CY62177GE30-55ZXI from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features an ERR output pin for real-time ECC event indication, ultra-low 3 µA typical standby current, and TTL-compatible I/Os. Used in industrial control modules requiring data integrity under extended temperature operation.

For engineers reviewing the CY62177GE30-55ZXI datasheet, CY62177GE30-55ZXI pinout, CY62177GE30-55ZXI application, or CY62177GE30-55ZXI equivalent, key selection criteria include ECC-enabled reliability, dual chip enable flexibility, TSOP I package compatibility, byte-level power-down capability, and industrial-grade (-40°C to +85°C) thermal performance.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on every read cycle without software intervention. The ERR pin asserts high during correction events, enabling system-level fault logging. Its Byte Power-down feature activates automatically when both BHE and BLE are deasserted-regardless of CE state-reducing leakage without external control logic.

The device supports two memory configurations via BYTE pin biasing: tied to VCC for 2M × 16 mode (A0–A20 address space), or to VSS for 4M × 8 mode (A0–A21, with A21 appearing on pin 45). Dual CE inputs (CE1/CE2) allow hierarchical memory mapping, while TTL-compatible I/Os simplify interface with legacy microcontrollers and FPGAs.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package Type I (TSOP I), lead-free, RoHS-compliant, body dimensions 12.0 mm × 20.0 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV51216BLL-55MLI and R1EX24128ASAS0I, CY62177GE30-55ZXI uniquely delivers hardware ECC, 55 ns parallel access, and industrial temperature rating in a single TSOP I package-making it the sole option for deterministic, high-reliability embedded memory in safety-aware industrial designs.

Availability

CY62177GE30-55ZXI is available at Aetrix Electronics and suitable for programmable logic controllers, industrial HMIs, motor drive controllers, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for CY62177GE30-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

CY62177GE30 belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered specifically for low-power, high-reliability industrial and automotive applications where data integrity and thermal robustness are non-negotiable.

FAQ

What is the function of the ERR pin on CY62177GE30-55ZXI?

The ERR pin is an open-drain output that asserts high for one clock cycle whenever the internal ECC logic detects and corrects a single-bit error during a read operation. It does not indicate uncorrectable multi-bit errors. The pin must be externally pulled up to V_CC and can connect directly to an interrupt input on a microcontroller for real-time error logging without polling overhead.

Can CY62177GE30-55ZXI operate in 4M × 8 mode using the 48-pin TSOP I package?

Yes-tie the BYTE pin (pin 46) to VSS to enable 4M × 8 configuration. In this mode, pin 45 becomes address line A21, while BHE, BLE, and I/O8–I/O14 are unused and may be left floating. All timing specifications-including 55 ns access-remain valid, and ECC functionality applies identically across both configurations.

Does CY62177GE30-55ZXI support automatic write-back after ECC correction?

No. Per datasheet Note 2, this device does not perform automatic write-back of corrected data to memory. The corrected value appears only on the I/O bus during the read cycle; the original corrupted bit remains unmodified in the array until explicitly rewritten by the host system.

How does the Byte Power-down feature reduce power consumption?

When both BHE and BLE are deasserted (high), the SRAM automatically enters standby mode with ISB2 ≤ 19 µA-even if CE1/CE2 remain asserted. This eliminates the need for external logic or firmware coordination to gate chip enables, making it ideal for systems with sporadic byte-access patterns like UART FIFO buffering or CAN message queuing.