Infineon Technologies CY62177GE30-55ZXIT

Overview

CY62177GE30-55ZXIT from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 2M × 16 or 4M × 8, operating at 55 ns access time over 2.2–3.6 V supply. It features an ERR output pin for real-time ECC event indication, ultra-low 3 µA typical standby current, and TTL-compatible I/Os. Used in industrial control systems requiring data integrity and low-power retention.

For engineers reviewing the CY62177GE30-55ZXIT datasheet, CY62177GE30-55ZXIT pinout, CY62177GE30-55ZXIT application, or CY62177GE30-55ZXIT equivalent, key selection criteria include ECC-enabled reliability, dual chip enable flexibility, byte-select power-down capability, TSOP I package compatibility, and industrial temperature support (–40°C to +85°C).

Technical Context

This SRAM integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors during read cycles, with ERR pin assertion confirming correction events. Its Byte Power-down feature enables automatic transition to standby mode when both BHE and BLE are deasserted-regardless of CE state-reducing dynamic leakage.

The device supports two memory configurations via BYTE pin control: tying BYTE to VCC selects 2M × 16 mode (A0–A20 address space); tying BYTE to VSS enables 4M × 8 mode with A21 available on pin 45. Dual CE inputs (CE1/CE2) allow hierarchical memory mapping in multi-chip systems.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (Type I, 12.0 mm × 20.0 mm, 0.5 mm pitch), RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, CY62177GE30-55ZXIT uniquely delivers hardware ECC with observable correction events, configurable width, and sub-20 µA standby-enabling higher functional safety integrity and longer battery life in mission-critical embedded systems.

Availability

CY62177GE30-55ZXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics data recorders requiring stable component supply across extended product lifecycles.

Supply support for CY62177GE30-55ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and communications markets.

CY62177GE30 belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-reliability embedded systems where data integrity and energy efficiency are co-primary design constraints.

FAQ

What is the function of the ERR pin on CY62177GE30-55ZXIT?

The ERR pin is an open-drain output that asserts HIGH for one clock cycle whenever a single-bit error is detected and corrected during a read operation. It provides hardware-level visibility into ECC activity without requiring polling or software intervention. The pin must be pulled up externally; if unused, it should be left floating per datasheet guidance.

Can CY62177GE30-55ZXIT operate in 4M × 8 mode using the 48-pin TSOP I package?

Yes. When the BYTE pin is tied to VSS, the device configures as 4M × 8 SRAM. In this mode, pin 45 becomes address line A21, while BHE, BLE, and I/O8–I/O14 are unused and may be left floating. The 48-pin TSOP I footprint remains identical-no PCB redesign is needed to switch configurations.

Does CY62177GE30-55ZXIT support automatic write-back after ECC correction?

No. As explicitly stated in the datasheet (Note 2), this device does not support automatic write-back on error detection. Corrected data remains valid only for the current read cycle; any persistent repair requires external logic or host software to rewrite the corrected value to the same address location.

How does the Byte Power-down feature reduce power consumption?

When both BHE and BLE are deasserted (HIGH), the device enters standby mode automatically-even if CE signals remain active-cutting ICC to ≤19 µA. This eliminates the need for precise timing coordination between byte-enable and chip-enable signals in burst-access applications, simplifying power management firmware.