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Infineon Technologies CY62187EV30LL-55BAXI
- Part No.:
- CY62187EV30LL-55BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
CY62187EV30LL-55BAXI.pdf
- Description:
- IC SRAM 64MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:469
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Product details
Overview
CY62187EV30LL-55BAXI from Cypress Semiconductor is a 64-Mbit (4M × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (8 µA typical). It features Automatic Power Down, byte-wide write enable (BHE/ BLE), and dual chip enables (CE1/CE2) for flexible memory expansion in portable embedded systems.
For engineers reviewing the CY62187EV30LL-55BAXI datasheet, CY62187EV30LL-55BAXI pinout, CY62187EV30LL-55BAXI application, or CY62187EV30LL-55BAXI equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), FBGA-48 package compatibility, MoBL® low-power architecture, and 16-bit parallel interface timing compliance.
Technical Context
This SRAM implements a 4,194,304-word × 16-bit array with fully static operation-no refresh required. Its Automatic Power Down mode reduces current by 99% when address lines are stable and CE1/CE2/BHE/ BLE meet defined logic thresholds, enabling deep sleep in battery-constrained devices.
The device supports independent byte write control via BHE and BLE, allowing selective 8-bit writes to upper or lower data bytes without affecting adjacent bits. All I/O pins enter High-Z during deselect, OE HIGH, or write cycles, ensuring clean bus sharing in multi-peripheral systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4M × 16) - supports 16-bit wide data paths without external multiplexing |
| Access Time | 55 ns - guarantees full-speed operation at 18.2 MHz bus frequency with margin |
| VCC Range | 2.2 V to 3.6 V - interoperable with 2.5 V and 3.3 V logic domains and Li-ion/Li-poly battery discharge profiles |
| Standby Current | 8 µA typical / 48 µA max - enables multi-week battery life in always-on sensor nodes |
| Active Current | 15 mA at 1 MHz - scales linearly with frequency, enabling predictable power budgeting |
| Operating Temp | –40°C to +85°C - qualified for industrial-grade embedded control and automotive infotainment head units |
| Data Retention VCC | 1.5 V minimum - preserves contents during brown-out or backup-battery switchover |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 4M-word addressing; no address multiplexing required |
| I/O0–I/O7 | Data Input/Output (Lower Byte) | Bi-directional 8-bit data path enabled by BLE LOW; isolated from upper byte during partial writes |
| I/O8–I/O15 | Data Input/Output (Upper Byte) | Bi-directional 8-bit data path enabled by BHE LOW; operates independently of lower byte |
| CE1, CE2 | Chip Enable Controls | Dual active-low/active-high enables allow hierarchical memory mapping and seamless bank switching |
| OE | Output Enable | Active-low control for read data output; forces I/O pins to High-Z when HIGH |
| WE | Write Enable | Active-low signal initiating write cycle; timing-critical for setup/hold compliance per tSD/tHD |
| BLE, BHE | Byte Low/High Enable | Independent 8-bit write gating-enables efficient byte-aligned updates without read-modify-write overhead |
| VCC, VSS | Power Supply | Dual VCC and VSS balls provide low-inductance decoupling; supports simultaneous switching noise mitigation |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 8 µA typical-critical for cellular handsets and wearable health monitors requiring >100-hour battery life |
| Automatic Power Down | Enters 99% lower-power state when address stability and CE/BHE/ BLE conditions are met-no software intervention needed |
| Independent Byte Write Control | Enables true 8-bit writes to either half of the 16-bit bus without disturbing adjacent data-eliminates read-modify-write cycles |
| Industrial Temperature Range | Rated –40°C to +85°C with guaranteed AC/DC specs-suitable for factory automation controllers and outdoor IoT gateways |
| 48-ball FBGA Packaging | Compact 6 mm × 8 mm footprint with 0.8 mm pitch-enables high-density PCB layouts while maintaining manufacturability |
Applications
| Portable Cellular Handsets | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Storing real-time call stack, SMS buffers, and firmware overlay segments in GSM/UMTS feature phones. IC Role / Device Role / Timing Role: Primary working memory with zero-refresh operation and sub-100 µA sleep current during idle screen states. Use Value: Extends talk time by 12–18% versus standard SRAMs due to 8 µA typical ISB2 and fast wake-from-sleep (<55 ns tPD). |
Use Scenario: Holding transient I/O scan data and motion control trajectory points in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability buffer memory interfacing directly to 16-bit microcontroller buses with deterministic 55 ns read/write latency. Use Value: Ensures deterministic response under EMI-heavy factory environments via robust 2.2–3.6 V VCC tolerance and –40°C to +85°C operation. |
| Medical Wearable Sensors | Automotive Infotainment Displays |
|
Use Scenario: Caching continuous ECG waveform samples and algorithm intermediate results in patch-style cardiac monitors. IC Role / Device Role / Timing Role: Low-voltage SRAM operating from single-cell Li-poly (2.7–3.6 V) with automatic retention mode during sensor sleep intervals. Use Value: Achieves >72-hour runtime on 120 mAh battery by leveraging 1.5 V data retention voltage and 48 µA max ISB2. |
Use Scenario: Serving as frame buffer for 800×480 TFT displays in automotive head units with real-time graphics rendering. IC Role / Device Role / Timing Role: Dual-port-capable 16-bit memory supporting concurrent CPU access and display controller DMA bursts. Use Value: Eliminates display tearing through precise tAA ≤55 ns and tDOE ≤25 ns timing margins synchronized to pixel clock domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV25616BLL-55BLI | Same density (4M × 16), 55 ns speed, but 2.7–3.6 V only; higher ISB2 (25 µA typ) | Lacks 2.2 V support-unsuitable for deep-discharge battery systems below 2.7 V | Select when system VCC is fixed at 3.3 V and extended low-voltage operation is unnecessary |
| ON Semiconductor NVSRAM NB16L16AV55Z | Non-volatile SRAM with integrated EEPROM backup; 55 ns access but higher ICC (25 mA typ @ 1 MHz) | Provides automatic data retention after power loss-adds complexity for pure volatile use cases | Select only when persistent storage across power cycles is mandatory, accepting higher cost and active power penalty |
Compared with IS62WV25616BLL-55BLI and NB16L16AV55Z, CY62187EV30LL-55BAXI uniquely balances ultra-wide VCC range (2.2–3.6 V), lowest standby current (8 µA typ), and industrial temperature rating-making it optimal for battery-powered industrial and medical edge devices where voltage headroom and longevity are critical.
Availability
CY62187EV30LL-55BAXI is available at Aetrix Electronics and suitable for portable medical wearables, industrial PLC data logging, automotive display frame buffering, and cellular handset memory expansion requiring stable component supply across long production lifecycles.
Supply support for CY62187EV30LL-55BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded systems, emphasizing reliability, low power, and integration.
CY62187EV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and energy-sensitive applications where extended battery runtime and wide input voltage tolerance are essential design requirements.
FAQ
What is the minimum VCC required to retain data in CY62187EV30LL-55BAXI?
The device guarantees data retention down to 1.5 V VCC when placed in standby mode (CE1 HIGH or CE2 LOW or both BHE/ BLE HIGH). This allows operation during brown-out conditions or backup battery switchover without data loss, provided all control inputs remain at valid CMOS levels.
How does Automatic Power Down reduce power consumption?
Automatic Power Down activates when address lines are stable and CE1/CE2/BHE/ BLE meet defined logic thresholds-reducing ICC to just 8 µA typical. This occurs without software intervention and cuts active current by 99%, extending battery life in intermittently active systems like sensor nodes.
Can CY62187EV30LL-55BAXI interface directly with a 3.3 V microcontroller?
Yes. The device supports 2.2–3.6 V VCC, making it fully compatible with 3.3 V logic families. VOH is 2.4 V min (IOH = –1.0 mA) and VOL is 0.4 V max (IOL = 2.1 mA), satisfying standard 3.3 V CMOS input thresholds for reliable interfacing without level shifters.
What is the significance of dual chip enables (CE1 and CE2)?
CE1 (active-low) and CE2 (active-high) enable hierarchical memory decoding-allowing multiple CY62187EV30LL-55BAXI devices to share an address/data bus without external logic. This simplifies banked memory expansion in systems requiring >64 Mbit capacity while minimizing board space and routing complexity.
CY62187EV30LL-55BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.7V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62187EV30LL-55BAXI FAQ
1.How can I place an order for CY62187EV30LL-55BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62187EV30LL-55BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62187EV30LL-55BAXI reliable?
The price and inventory of CY62187EV30LL-55BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62187EV30LL-55BAXI is usually 5 days.
3.What payment methods are accepted for CY62187EV30LL-55BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62187EV30LL-55BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62187EV30LL-55BAXI?
CY62187EV30LL-55BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62187EV30LL-55BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62187EV30LL-55BAXI?
For technical support, including CY62187EV30LL-55BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62187EV30LL-55BAXI requirements.
6.How does Aetrix verify that CY62187EV30LL-55BAXI is sourced from the original manufacturer or authorized distributors?
All CY62187EV30LL-55BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62187EV30LL-55BAXI meets industry standards.
7.What is the process for return or replacement of CY62187EV30LL-55BAXI?
All CY62187EV30LL-55BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62187EV30LL-55BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62187EV30LL-55BAXI part is unused and in its original packaging.
Return procedure for CY62187EV30LL-55BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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