Infineon Technologies CY62187EV30LL-55BAXIT

Overview

CY62187EV30LL-55BAXIT from Cypress Semiconductor is a 64-Mbit (4M × 16) CMOS static RAM with 55 ns access time, operating across 2.2 V–3.6 V supply, featuring ultra-low standby current (8 µA typ), automatic power-down on address inactivity, and dual chip enable (CE1/CE2) for flexible memory expansion in portable embedded systems.

For engineers reviewing the CY62187EV30LL-55BAXIT datasheet, CY62187EV30LL-55BAXIT pinout, CY62187EV30LL-55BAXIT application, or CY62187EV30LL-55BAXIT equivalent, key selection criteria include its MoBL® low-power architecture, FBGA-48 package compatibility, byte-level write control via BHE/ BLE, and industrial temperature range (–40°C to +85°C) support.

Technical Context

This SRAM implements a synchronous, non-volatile-retention-free static memory array organized as 4,194,304 words × 16 bits, with independent high- and low-byte enables (BHE/BLE) enabling partial-word writes without read-modify-write cycles. Its Automatic Power Down circuit reduces ICC by >99% when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH.

The device uses CMOS logic for optimal speed–power trade-off, supports full data retention down to 1.5 V, and meets industrial-grade reliability with thermal resistance θJA = 73.0 °C/W (FBGA). All I/O pins enter High-Z during deselect, OE HIGH, or write operations, minimizing bus contention.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density, low-power SRAM applications.

Compared with IS62WV25616BLL-55NLI and R1LV25616AS-5SI#B0, CY62187EV30LL-55BAXIT uniquely combines MoBL® automatic power-down, true byte-enable flexibility, and full 2.2 V operation - making it optimal for battery-constrained, burst-mode embedded systems requiring hardware-level power efficiency.

Availability

CY62187EV30LL-55BAXIT is available at Aetrix Electronics and suitable for smartphone baseband subsystems, industrial PLC data buffers, medical wearable ECG monitors, and automotive ADAS camera preprocessors requiring stable component supply and long-term lifecycle support.

Supply support for CY62187EV30LL-55BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, with leadership in memory, PSoC, and USB-C technologies.

CY62187EV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-sensitive applications demanding zero-refresh operation, ultra-low standby current, and robust industrial temperature performance.

FAQ

What is the minimum VCC required to retain data in CY62187EV30LL-55BAXIT?

The device guarantees data retention down to 1.5 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤48 µA under defined CE/BHE/BLE disable conditions. This enables safe suspend-to-RAM operation during battery brownout events without external backup capacitors.

How does Automatic Power Down activate, and what is its latency?

Automatic Power Down triggers when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH - placing the device into ISB2 mode (<48 µA). The transition occurs within tPD = 55 ns after the qualifying condition is met, per Switching Characteristics. No software or external control is needed; it is fully hardware-driven.

Can CY62187EV30LL-55BAXIT perform simultaneous read and write on different bytes?

No. The device is a single-port SRAM: only one operation (read or write) may occur per cycle. However, byte-selectable writes (via BHE/BLE) allow updating either I/O0–I/O7 or I/O8–I/O15 independently in a single write cycle - avoiding full-word overwrites and reducing bus traffic.

Is the 48-ball FBGA package compatible with standard reflow profiles?

Yes. The FBGA-48 package (6 mm × 8 mm, 0.8 mm pitch) is qualified for IPC/JEDEC J-STD-020D reflow profiles. Peak temperature must not exceed 260°C for ≤60 seconds, and thermal resistance values (θJA = 73.0 °C/W, θJC = 10.9 °C/W) are measured on a 4-layer PCB per JEDEC standards.