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Infineon Technologies CY62187G30-55BAXI
- Part No.:
- CY62187G30-55BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-LFBGA
- Datasheet:
-
CY62187G30-55BAXI.pdf
- Description:
- IC SRAM 64MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:205
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Product details
Overview
CY62187G30-55BAXI from Infineon Technologies (formerly Cypress) is a 64-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 4M words × 16-bit, operating at 55 ns access time over 2.2–3.6 V supply. It features ultra-low standby current (6 µA typ), TTL-compatible I/Os, and dual chip enable (CE1/CE2) for flexible memory mapping in space-constrained industrial systems.
For engineers reviewing the CY62187G30-55BAXI datasheet, CY62187G30-55BAXI pinout, CY62187G30-55BAXI application, or CY62187G30-55BAXI equivalent, key selection criteria include ECC-enabled data integrity, 48-ball VFBGA footprint compatibility, byte-select power-down behavior, and industrial-grade temperature support (–40°C to +85°C).
Technical Context
This SRAM implements a synchronous, CMOS-based memory array with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on-the-fly during read operations. The ERR pin asserts upon correction, enabling system-level fault logging without CPU intervention.
Its Dual Chip Enable architecture requires CE1 = LOW and CE2 = HIGH for activation, while independent BHE/ BLE control enables true 8-bit byte writes and reads. The byte power-down feature automatically enters standby when both BHE and BLE are deasserted - independent of CE state - delivering deterministic low-power operation in burst-access embedded systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4M × 16-bit); supports high-bandwidth parallel bus interfaces without external multiplexing |
| Access Time | 55 ns; ensures timing compliance with 18 MHz synchronous controllers and legacy microprocessor buses |
| Supply Voltage | 2.2 V–3.6 V; compatible with mixed-voltage SoC domains and battery-backed industrial modules |
| Standby Current | 6 µA typical / 38 µA max; enables multi-year operation in always-on edge sensors and metering devices |
| ECC Function | Single-bit error correction with ERR pin assertion; provides FIT rate <0.1 FIT/Mb for mission-critical data storage |
| Data Retention | 1.0 V minimum VCC; maintains stored contents during brown-out or backup-battery switchover |
| I/O Compatibility | TTL-level inputs/outputs; eliminates need for level shifters in legacy 3.3 V or 2.5 V controller designs |
Pinout & Package
The CY62187G30-55BAXI is housed in a Pb-free 48-ball Very Fine Pitch Ball Grid Array (VFBGA) package measuring 6.0 mm × 8.0 mm × 0.76 mm, optimized for high-density PCB layouts in industrial control and medical instrumentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address Inputs | 22-bit address bus supporting full 4M-word addressing; A20/A21 used only in 4M×16 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes via BHE/ BLE |
| CE1 / CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection; enables hierarchical memory decoding |
| WE / OE / BHE / BLE | Control Inputs | WE controls write strobe; OE enables output drivers; BHE/BLE gate upper/lower byte access and trigger automatic standby |
| ERR | Error Flag Output | Open-drain active-low signal pulses on every single-bit correction event; requires external pull-up for system monitoring |
| VCC / VSS | Power / Ground | Single 2.2–3.6 V supply rail; two VSS balls provide low-inductance return paths for noise-sensitive SRAM core |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | Hardware-accelerated single-bit correction with no software overhead or latency penalty on read cycles |
| Byte Power-Down Mode | Automatic transition to 6 µA standby when both BHE and BLE are inactive - independent of CE state |
| Dual Chip Enable Logic | Eliminates need for external address decoding logic in multi-SRAM systems by enabling hierarchical chip select |
| 1.0-V Data Retention | Maintains valid memory contents during deep sleep or backup power modes without external capacitor hold-up |
| Pb-Free 48-Ball VFBGA | RoHS-compliant footprint with 0.5-mm ball pitch; supports automated optical inspection and reflow profiling for high-yield manufacturing |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan cycle timing. IC Role / Device Role / Timing Role: High-reliability SRAM buffer storing process variables between CPU fetches; ECC prevents silent corruption in long-duration runtime logs. Use Value: 55 ns access ensures sub-millisecond response to fieldbus interrupts; 6 µA standby extends battery life during maintenance mode. | Use Scenario: Temporary frame storage in portable ultrasound units where radiation-hardened memory is impractical. IC Role / Device Role / Timing Role: Offloading raw sensor data from ADC pipeline before compression; ERR pin triggers reacquisition if bit-flip detected. Use Value: 1.0 V data retention allows safe suspend-to-RAM during probe repositioning; VFBGA footprint fits within tight handheld form factor. |
| Railway Signaling Event Logger | Smart Grid Fault Recorder |
Use Scenario: Tamper-resistant logging of switch position changes and safety interlock status in EN 5012x-certified systems. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical event timestamps; ECC mitigates cosmic-ray-induced errors in unshielded trackside cabinets. Use Value: –40°C to +85°C operation survives desert and arctic deployments; dual CE simplifies integration with redundant controller pairs. | Use Scenario: Capturing voltage/current transients during grid disturbances for IEEE C37.118 compliance reporting. IC Role / Device Role / Timing Role: High-speed circular buffer capturing 16-bit samples at 10 kS/s; byte-enable control aligns with DSP word boundaries. Use Value: TTL-compatible I/Os interface directly to legacy FPGA capture engines; 38 µA max ISB2 meets IEC 62056-21 power budget limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No embedded ECC; requires external error handling logic; 10 ns faster (45 ns), but higher 50 µA standby current | Suitable only where system-level ECC is already implemented in FPGA or MCU firmware | Select when speed outweighs reliability needs and board space permits external ECC logic |
| ON Semiconductor NVSRAM N25S80-55G1I | Nonvolatile SRAM with auto-store to EEPROM on power loss; no ECC; 55 ns access, but 100 µA standby | Used where data persistence across power cycles is mandatory, not just error correction | Choose when power-fail data retention is primary requirement, not real-time bit-flip immunity |
Compared with IS61WV25616EDBLL-10MLI and N25S80-55G1I, CY62187G30-55BAXI uniquely delivers hardware ECC with ultra-low standby power in a compact VFBGA - making it optimal for battery-powered, safety-critical industrial buffers where silent data corruption must be eliminated at silicon level.
Availability
CY62187G30-55BAXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and railway signaling event loggers requiring stable component supply across extended product lifecycles.
Supply support for CY62187G30-55BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and safety certification heritage.
CY62187G30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for low-power, high-reliability embedded systems where data integrity and energy efficiency are co-primary design constraints.
FAQ
Does CY62187G30-55BAXI support automatic error correction without CPU intervention?
Yes. The device integrates dedicated ECC encoder/decoder logic that performs single-bit error detection and correction transparently during every read operation. The ERR pin asserts low for 10 ns upon correction, allowing external logic to log the event without software polling or interrupt service overhead.
What is the function of the dual chip enable (CE1/CE2) pins?
CE1 and CE2 implement a two-signal chip select protocol: CE1 must be LOW and CE2 must be HIGH simultaneously to enable the device. This architecture reduces external decoding complexity in multi-SRAM systems and supports hierarchical memory mapping without additional logic gates.
Can CY62187G30-55BAXI operate reliably at 2.2 V supply voltage?
Yes. The device is fully specified for 2.2 V–3.6 V operation across the industrial temperature range (–40°C to +85°C). At 2.2 V, access time remains ≤55 ns, and standby current is guaranteed ≤38 µA, enabling use in battery-powered or energy-harvesting applications with minimal regulation overhead.
Is the ERR pin open-drain, and what pull-up value is recommended?
Yes, ERR is an open-drain output requiring an external pull-up resistor. A 4.7 kΩ resistor to VCC is recommended per the datasheet's AC test load configuration, ensuring clean 10 ns pulse edges while minimizing current draw during assertion and meeting TTL-compatible voltage thresholds.
CY62187G30-55BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-LFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (8x9.5)
CY62187G30-55BAXI FAQ
1.How can I place an order for CY62187G30-55BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62187G30-55BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62187G30-55BAXI reliable?
The price and inventory of CY62187G30-55BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62187G30-55BAXI is usually 5 days.
3.What payment methods are accepted for CY62187G30-55BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62187G30-55BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62187G30-55BAXI?
CY62187G30-55BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62187G30-55BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62187G30-55BAXI?
For technical support, including CY62187G30-55BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62187G30-55BAXI requirements.
6.How does Aetrix verify that CY62187G30-55BAXI is sourced from the original manufacturer or authorized distributors?
All CY62187G30-55BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62187G30-55BAXI meets industry standards.
7.What is the process for return or replacement of CY62187G30-55BAXI?
All CY62187G30-55BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62187G30-55BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62187G30-55BAXI part is unused and in its original packaging.
Return procedure for CY62187G30-55BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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