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Infineon Technologies CY62256EV18LL-70SNXIT
- Part No.:
- CY62256EV18LL-70SNXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY62256EV18LL-70SNXIT.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,882
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Product details
Overview
CY62256EV18LL-70SNXIT from Cypress Semiconductor is a 256-Kbit (32 K × 8) CMOS static RAM with 70 ns access time, 1.65 V to 2.25 V supply voltage, and industrial temperature range (–40 °C to +85 °C), designed for low-power portable memory buffering in handheld devices and embedded controllers.
For engineers reviewing the CY62256EV18LL-70SNXIT datasheet, CY62256EV18LL-70SNXIT pinout, CY62256EV18LL-70SNXIT application, or CY62256EV18LL-70SNXIT equivalent, key selection criteria include ultra-low standby current (1 µA typ), active current at 1 MHz (1.3 mA typ), CE/OE/WE control logic, and Pb-free 28-pin narrow SOIC packaging.
Technical Context
This SRAM implements a full CMOS architecture with automatic power-down when chip enable (CE) is HIGH, reducing ICC by >99% to ≤4 µA. It supports three-cycle read/write timing modes-address-controlled, OE-controlled, and WE-controlled-with guaranteed tRC = 70 ns across VCC = 1.65–2.25 V and TA = –40 °C to +85 °C.
Input/output pins I/O0–I/O7 enter high-impedance state during deselection (CE HIGH), output disable (OE HIGH), or write operation (CE LOW & WE LOW). Address decoding uses 15-bit A0–A14 for 32 K-word addressing, with complementary metal oxide semiconductor design optimizing speed-power trade-off.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32 K × 8), enabling byte-wide data access without external multiplexing |
| Access time | 70 ns max, ensuring compatibility with 14 MHz bus timing in microcontroller interfaces |
| Supply voltage | 1.65 V to 2.25 V, supporting single-supply operation in modern low-voltage SoC domains |
| Standby current | 1 µA typical / 4 µA max, critical for battery runtime extension in always-on subsystems |
| Active current | 1.3 mA typical at 1 MHz, enabling efficient burst reads in portable firmware execution |
| Data retention voltage | 1.0 V min, allowing memory state preservation during brown-out or sleep-mode VCC scaling |
| Operating temperature | –40 °C to +85 °C industrial grade, validated for deployment in automotive body control and industrial HMI |
Pinout & Package
Package: Pb-free 28-pin narrow SOIC (SOIC-28, 300 mil width), JEDEC MS-012AC compliant, thermal resistance θJA = 76.56 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus accepting 0x0000–0x7FFF range for full 32 K-word selection |
| I/O0–I/O7 | Bidirectional data bus | Tri-stateable 8-bit interface sharing pins for read and write, high-Z when CE/OE inactive or during write |
| CE | Chip enable | Active-LOW global select; HIGH forces automatic power-down and high-Z outputs |
| OE | Output enable | Active-LOW control for read data gating; HIGH disables outputs regardless of CE state |
| WE | Write enable | Active-LOW signal initiating write cycle; overlap with CE LOW defines internal write window |
| VCC | Power supply | 1.65–2.25 V core supply, decoupling required within 10 mm of pin per layout guidelines |
| GND | Ground reference | Common return path for all digital and power currents; separate analog ground not required |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® low-power architecture | Reduces system-level battery drain via 1 µA standby and <2 mA active draw at 1 MHz |
| Automatic CE power-down | Eliminates need for external power-gating circuitry; enters ultra-low ISB2 mode on CE HIGH |
| Pin compatibility with CY62256N | Enables drop-in replacement in legacy 5 V designs after level-shifter integration |
| CMOS input thresholds | VIH ≥ 1.4 V and VIL ≤ 0.4 V at VCC = 1.65–2.25 V, ensuring robust noise margin with 1.8 V logic families |
| Tri-state output control | Independent OE and CE assertion allows flexible bus arbitration without external buffers |
Applications
| Portable Medical Monitors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Real-time waveform capture and local display buffering in battery-powered ECG/SpO₂ units. IC Role / Device Role / Timing Role: Byte-accessible SRAM storing 32 KB of sensor samples prior to BLE transmission. Use Value: 1 µA standby current extends single-charge battery life beyond 72 hours in sleep mode. | Use Scenario: Temporary storage of I/O status and configuration registers during PLC firmware updates. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding runtime variables during hot-reload sequences. Use Value: 70 ns access time enables deterministic response to fieldbus interrupt requests under 100 µs latency budget. |
| Automotive Body Control Modules | Smart Meter Firmware Caching |
Use Scenario: Storing door lock actuation history and lighting sequence logs in BCM microcontrollers. IC Role / Device Role / Timing Role: External memory mapped to MCU's parallel bus for fast nonvolatile event logging. Use Value: Industrial temperature rating (–40 °C to +85 °C) ensures reliable operation inside dashboard enclosures. | Use Scenario: Caching tariff tables and consumption history in AMI meters during RF communication gaps. IC Role / Device Role / Timing Role: Low-voltage SRAM interfaced to 1.8 V metrology SoC for secure, low-power data staging. Use Value: 1.0 V data retention threshold permits memory hold during 100 ms VCC dip events without data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV2568BLL-70NLI | Same 32 K × 8 organization, 70 ns speed, but 2.5 V to 3.6 V VCC range; higher ISB (10 µA typ) | Requires level-shifting for 1.8 V systems; better suited for 3.3 V industrial controllers | Select if existing 3.3 V rail eliminates need for DC-DC conversion |
| ON Semiconductor NVSRAM N25S256A-70G12I | Nonvolatile SRAM with integrated EEPROM backup; 70 ns access but 3.0 V nominal VCC; larger package (32-pin TSOP) | Provides automatic data retention on power loss; adds complexity for pure volatile use cases | Choose only when data persistence during main power failure is mandatory |
Compared with IS62WV2568BLL-70NLI and N25S256A-70G12I, the CY62256EV18LL-70SNXIT delivers optimal energy efficiency in 1.8 V battery-constrained systems, while maintaining pin-level compatibility with legacy CY62256N layouts and requiring no nonvolatile management overhead.
Availability
CY62256EV18LL-70SNXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive body control modules requiring stable component supply and long-term lifecycle support.
Supply support for CY62256EV18LL-70SNXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip solutions, memory, and USB connectivity ICs.
The MoBL® (More Battery Life) SRAM product line was engineered specifically for ultra-low-power portable electronics, prioritizing sub-microamp standby current and wide low-voltage operation without sacrificing speed.
FAQ
What is the minimum VCC required to retain data in CY62256EV18LL-70SNXIT?
The device guarantees data retention down to VCC = 1.0 V, as specified in the Data Retention Characteristics table (VDR = 1.0 V min). At this voltage, ICCDR remains ≤3 µA, and the memory maintains stored bits without refresh during brown-out conditions or deep-sleep states.
Can CY62256EV18LL-70SNXIT be used with a 3.3 V microcontroller interface?
No - its absolute maximum VCC is 2.45 V, and operating range is strictly 1.65–2.25 V. Direct connection to 3.3 V logic violates maximum ratings. Level-shifting (e.g., TXB0108 or discrete MOSFET translators) is mandatory for safe interfacing with 3.3 V MCUs.
How does automatic power-down behave when CE is HIGH but OE or WE toggles?
When CE is HIGH, the device enters automatic power-down regardless of OE or WE state. Outputs remain high-Z, and ICC drops to ISB2 (≤4 µA). Toggling OE or WE has no effect unless CE transitions LOW to re-enable the device.
Is the 28-pin narrow SOIC package RoHS-compliant and lead-free?
Yes - the "N" suffix in "SNXIT" denotes Pb-free (lead-free) construction per JEDEC J-STD-609, and the package meets RoHS Directive 2011/65/EU requirements. The device uses matte tin terminations and halogen-free molding compound.
CY62256EV18LL-70SNXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
CY62256EV18LL-70SNXIT FAQ
1.How can I place an order for CY62256EV18LL-70SNXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256EV18LL-70SNXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256EV18LL-70SNXIT reliable?
The price and inventory of CY62256EV18LL-70SNXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256EV18LL-70SNXIT is usually 5 days.
3.What payment methods are accepted for CY62256EV18LL-70SNXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256EV18LL-70SNXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256EV18LL-70SNXIT?
CY62256EV18LL-70SNXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256EV18LL-70SNXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256EV18LL-70SNXIT?
For technical support, including CY62256EV18LL-70SNXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256EV18LL-70SNXIT requirements.
6.How does Aetrix verify that CY62256EV18LL-70SNXIT is sourced from the original manufacturer or authorized distributors?
All CY62256EV18LL-70SNXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256EV18LL-70SNXIT meets industry standards.
7.What is the process for return or replacement of CY62256EV18LL-70SNXIT?
All CY62256EV18LL-70SNXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62256EV18LL-70SNXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256EV18LL-70SNXIT part is unused and in its original packaging.
Return procedure for CY62256EV18LL-70SNXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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