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Infineon Technologies CY62256NLL-55ZRXET
- Part No.:
- CY62256NLL-55ZRXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY62256NLL-55ZRXET.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:2,346
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Product details
Overview
CY62256NLL-55ZRXET from Cypress Semiconductor is a 256 Kbit (32K × 8) CMOS static RAM with 55 ns access time, 4.5–5.5 V operation, and industrial temperature range (–40°C to +85°C). It features TTL-compatible I/O, automatic CE-controlled power-down (82.5 μW max standby), and tristate outputs for bus sharing in embedded microcontroller systems.
For engineers reviewing the CY62256NLL-55ZRXET datasheet, CY62256NLL-55ZRXET pinout, CY62256NLL-55ZRXET application, or CY62256NLL-55ZRXET equivalent, key selection criteria include access timing consistency at 55 ns, low ISB2 standby current (≤10 μA), CE/OE/WE control logic compatibility, and 28-pin TSOP-I package fit for space-constrained PCB layouts.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array with full address decoding (A0–A14), bidirectional data I/O (I/O0–I/O7), and three independent control signals: CE (chip enable), OE (output enable), and WE (write enable). All inputs are TTL-compatible with VIH ≥ 2.2 V and VIL ≤ 0.8 V.
Power management relies on CE-driven automatic power-down: when CE is HIGH, ICC drops to ≤10 μA (ISB2) while retaining data down to VCC = 2.0 V. Output drivers support high-impedance states with tHZOE ≤ 25 ns and tLZOE ≤ 5 ns under CL = 5 pF load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 Kbit (32,768 × 8 bits); supports byte-wide data bus interfacing without external demultiplexing. |
| Access Time | 55 ns max; guarantees deterministic read latency for real-time firmware execution in MCU-based systems. |
| Voltage Range | 4.5 V to 5.5 V; compatible with standard 5 V TTL logic rails and tolerant of ±10% supply variation. |
| Standby Current | ≤10 μA (ISB2, CMOS inputs); enables ultra-low-power sleep modes in battery-backed or energy-sensitive designs. |
| Operating Temp | –40°C to +85°C; qualified for industrial-grade reliability without derating in convection-cooled enclosures. |
| Package | 28-pin TSOP-I (0.400" width); surface-mount footprint with 0.050" pitch, optimized for automated assembly and thermal dissipation. |
| Data Retention | VCC ≥ 2.0 V required; retains stored data during brown-out or controlled power-down sequences. |
Pinout & Package
28-pin Thin Small Outline Package (TSOP-I), 0.400" body width, JEDEC MO-153 compliant. Pin 1 index marked by notch or dot; pins arranged in single row with 0.050" pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus; selects one of 32,768 memory locations; no internal latching. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristate I/O lines; driven by internal sense amps during read, accept write data during write cycles. |
| CE | Chip Enable (active LOW) | Primary device select; asserts internal power-down when HIGH, enabling multi-chip memory expansion. |
| OE | Output Enable (active LOW) | Controls output driver state; HIGH forces I/O pins to high-Z, allowing shared bus arbitration. |
| WE | Write Enable (active LOW) | Determines R/W direction; LOW with CE LOW initiates write; HIGH with CE/OE LOW enables read. |
| GND (Pin 14) | Ground Reference | Signal and power return path; must be low-impedance connection to minimize noise coupling into I/O lines. |
| VCC (Pin 28) | Power Supply | +5 V nominal supply; requires local 0.1 μF ceramic decoupling adjacent to pin per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to ≤10 μA (ISB2) when chip deselected-enables zero-software-overhead sleep mode entry. |
| TTL-Compatible Interface | VIH ≥ 2.2 V and VIL ≤ 0.8 V allow direct connection to legacy 5 V microcontrollers without level-shifting. |
| Tristate Output Drivers | tHZOE ≤ 25 ns and tLZOE ≤ 5 ns ensure clean bus release and acquisition for multi-SRAM systems. |
| Low Active Power | 275 mW max (ICC ≤ 50 mA @ 5.5 V); supports thermally constrained applications without forced cooling. |
| Pb-Free Packaging | RoHS-compliant TSOP-I package meets IPC/JEDEC J-STD-020 reflow profile requirements. |
Applications
| Industrial PLC Memory Buffer | Automotive ECU Data Logging |
|---|---|
|
Use Scenario: Stores transient sensor readings and control flags in programmable logic controllers during cyclic scan execution. IC Role / Device Role / Timing Role: Byte-accessible scratchpad RAM interfaced directly to ARM Cortex-M3/M4 buses via parallel address/data lines. Use Value: 55 ns access ensures deterministic response within 100 μs scan cycles; low ISB2 enables power-gating between scans without data loss. |
Use Scenario: Captures CAN bus diagnostic frames and fault codes during vehicle ignition-off periods. IC Role / Device Role / Timing Role: Non-retentive buffer holding volatile runtime data prior to flash storage; powered from always-on 5 V rail. Use Value: –40°C to +85°C rating matches under-hood ECU thermal envelope; CE-controlled power-down cuts quiescent draw below 15 μA. |
| Medical Infusion Pump Controller | Point-of-Sale Terminal Boot Cache |
|
Use Scenario: Holds calibration coefficients and real-time dosing parameters in Class II medical devices requiring deterministic memory access. IC Role / Device Role / Timing Role: Dedicated SRAM mapped to microcontroller's external memory interface; accessed via fixed wait-state configuration. Use Value: 55 ns tAA guarantees sub-microsecond parameter fetches during closed-loop motor control loops; Pb-free TSOP-I supports ISO 13485 compliance. |
Use Scenario: Accelerates boot sequence by caching BIOS/UEFI initialization code in retail kiosks with frequent power cycling. IC Role / Device Role / Timing Role: External instruction cache supplementing internal MCU flash; enabled only during cold-start phase. Use Value: Low tRC (55 ns) reduces boot latency by ~12% vs. 70 ns alternatives; CE gating allows dynamic power isolation after cache warm-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62C256AL-55QLI | Same 32K × 8 organization, 55 ns speed, but uses 28-pin SOIC (300-mil) instead of TSOP-I; ISB2 = 15 μA (vs. 10 μA). | SOIC package requires larger PCB area and has higher ΘJA (76.6°C/W vs. 93.9°C/W), limiting use in compact thermal envelopes. | Select when board layout prioritizes hand-solderability or existing SOIC footprint reuse over density. |
| ON Semiconductor MC68HC11E9CP | Not a drop-in replacement: integrated MCU with on-chip 512-byte RAM; no external parallel interface or CE/OE/WE controls. | Replaces system-level architecture-not a component-level substitute; eliminates need for external memory but locks firmware to HC11 ISA. | Choose only for greenfield designs where migrating to an integrated controller is acceptable and cost-justified. |
Compared with IS62C256AL-55QLI and MC68HC11E9CP, CY62256NLL-55ZRXET delivers superior standby efficiency and TSOP-I density for retrofitting legacy 5 V parallel bus systems, whereas alternatives trade off package flexibility or require full architectural redesign.
Availability
CY62256NLL-55ZRXET is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive ECU data logging, and medical infusion pump controllers requiring stable component supply across extended product lifecycles.
Supply support for CY62256NLL-55ZRXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.
CY62256N belongs to Cypress's legacy parallel SRAM product line, designed specifically for 5 V microprocessor and microcontroller systems needing fast, reliable, low-power external memory with minimal glue logic.
FAQ
What is the maximum clock frequency supported by CY62256NLL-55ZRXET?
CY62256NLL-55ZRXET is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (tAA = 55 ns max) and cycle time (tRC = 55 ns max), enabling reliable operation with microcontrollers running up to 10–12 MHz bus frequencies when configured with zero wait states.
Can CY62256NLL-55ZRXET operate at 3.3 V?
No. The device requires 4.5 V to 5.5 V supply voltage per its absolute maximum and operating specifications. Attempting 3.3 V operation results in undefined behavior, failed reads/writes, and potential data corruption due to insufficient VCC margin for TTL-compatible input thresholds and internal cell stability.
Does CY62256NLL-55ZRXET support battery backup for data retention?
Yes-when VCC is reduced to ≥2.0 V and CE is held HIGH, the device enters data retention mode drawing ≤10 μA (ISB2). This allows integration with coin-cell or supercapacitor backup circuits to preserve contents during main power loss, provided voltage droop remains above 2.0 V.
Is the TSOP-I package of CY62256NLL-55ZRXET RoHS-compliant?
Yes. The ZRXET suffix denotes a lead-free, RoHS-compliant 28-pin TSOP-I package meeting JEDEC J-STD-020 moisture sensitivity level 3 and IPC-7351 land pattern standards for reflow soldering.
CY62256NLL-55ZRXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
CY62256NLL-55ZRXET FAQ
1.How can I place an order for CY62256NLL-55ZRXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256NLL-55ZRXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256NLL-55ZRXET reliable?
The price and inventory of CY62256NLL-55ZRXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256NLL-55ZRXET is usually 5 days.
3.What payment methods are accepted for CY62256NLL-55ZRXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256NLL-55ZRXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256NLL-55ZRXET?
CY62256NLL-55ZRXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256NLL-55ZRXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256NLL-55ZRXET?
For technical support, including CY62256NLL-55ZRXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256NLL-55ZRXET requirements.
6.How does Aetrix verify that CY62256NLL-55ZRXET is sourced from the original manufacturer or authorized distributors?
All CY62256NLL-55ZRXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256NLL-55ZRXET meets industry standards.
7.What is the process for return or replacement of CY62256NLL-55ZRXET?
All CY62256NLL-55ZRXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62256NLL-55ZRXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256NLL-55ZRXET part is unused and in its original packaging.
Return procedure for CY62256NLL-55ZRXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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