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Infineon Technologies CY62256NLL-70ZRXIT
- Part No.:
- CY62256NLL-70ZRXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY62256NLL-70ZRXIT.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:540
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Product details
Overview
CY62256NLL-70ZRXIT from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) CMOS static RAM with 70 ns access time, 4.5–5.5 V operation, and industrial temperature range (–40 °C to +85 °C). It features active-low CE/OE/WE controls, tristate I/Os, automatic power-down (82.5 µW max standby), and TTL-compatible signaling - deployed in embedded controllers, industrial PLCs, and legacy instrumentation requiring nonvolatile SRAM retention during low-power modes.
For engineers reviewing the CY62256NLL-70ZRXIT datasheet, CY62256NLL-70ZRXIT pinout, CY62256NLL-70ZRXIT application, or CY62256NLL-70ZRXIT equivalent, key selection criteria include access timing consistency across temperature, CE-driven power-down behavior, I/O tristate control logic, and compatibility with 28-pin TSOP I footprint for space-constrained PCB layouts.
Technical Context
The device implements a full CMOS 32K × 8 asynchronous SRAM architecture with independent row/column decoding, sense amplifiers, and input/output buffers. Its automatic power-down activates when CE is HIGH, reducing ICC to ≤0.1 µA under CMOS input conditions - critical for battery-backed systems where data retention must persist at VCC ≥ 2.0 V.
Timing is governed by overlapping CE and WE assertions for write cycles, with OE controlling output enable state independently. All AC parameters (tRC = 70 ns, tAA = 70 ns, tDOE = 35 ns) are guaranteed over –40 °C to +85 °C at VCC = 4.5–5.5 V, with input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) ensuring robust noise margin against TTL-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 32 K × 8 bits (256 Kbit); supports byte-wide data bus without external multiplexing |
| Access time | 70 ns max; defines minimum read cycle interval for deterministic timing in synchronous bus interfaces |
| Voltage range | 4.5 V to 5.5 V; compatible with legacy 5 V logic rails and tolerant of ±10% supply variation |
| Standby current | 82.5 µW max (ISB2 = 0.1–10 µA); enables >10-year data retention on coin-cell backup |
| Operating temp | –40 °C to +85 °C; qualified for industrial control environments with thermal cycling stress |
| Package | 28-pin TSOP I (0.400" wide); surface-mount compatible with standard reflow profiles and IPC-7351B land patterns |
| Input compatibility | TTL/CMOS mixed-mode inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V); interoperable with both 5 V microcontrollers and FPGA I/O banks |
Pinout & Package
28-pin TSOP I (Thin Small Outline Package, Type I), 0.400-inch body width, 0.025-inch lead pitch, JEDEC MO-141AC compliant. Pin 1 marked by notch or dot; pins arranged in single row with staggered leads for improved solder joint reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus; selects one of 32,768 memory locations; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O7 | Bidirectional data bus | Tristate-enabled I/O lines; driven LOW/HIGH during read, high-Z when OE or CE inactive - eliminates need for external bus transceivers |
| CE | Chip enable | Active-low chip select; asserts internal power-down when HIGH - primary control for system-level memory partitioning and power gating |
| OE | Output enable | Active-low output control; enables read data drive only when CE is also LOW - prevents bus contention during write or deselect |
| WE | Write enable | Active-low write strobe; initiates write when CE and WE both LOW - timing-critical signal with 40 ns min pulse width (tPWE) |
| VCC | Power supply | +4.5 V to +5.5 V supply; decoupling capacitor required within 10 mm of pin 28 to suppress switching noise |
| GND | Ground reference | Signal and power ground return; must be connected to low-impedance plane to maintain VIH/VIL margins |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE power-down | Reduces ICC to ≤0.1 µA when CE is HIGH - eliminates need for external power switches in battery-backed applications |
| Tristate I/O with OE control | Enables direct connection to shared data buses without external direction logic or transceivers |
| 70 ns access with 5 V supply | Meets timing requirements of 14.3 MHz Z80, 8051, and 68000-based systems without wait-state insertion |
| Industrial temperature qualification | Guaranteed operation from –40 °C to +85 °C - validated per AEC-Q100 stress test conditions for long-term reliability |
| Pb-free packaging option | RoHS-compliant TSOP I package with matte tin lead finish - suitable for lead-free reflow assembly |
Applications
| Industrial PLC Data Buffer | Medical Instrumentation Memory Cache |
|---|---|
Use Scenario: Stores real-time sensor calibration tables and runtime configuration in programmable logic controllers with cyclic scan intervals ≤10 ms. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between ARM Cortex-M4 CPU and dual-port FPGA interface; provides zero-wait-state access during 100 kHz analog acquisition bursts. Use Value: 70 ns tAA ensures deterministic read latency under worst-case thermal drift, while ISB2 ≤10 µA extends backup battery life beyond 5 years. | Use Scenario: Holds waveform history and diagnostic logs in portable ECG monitors powered by CR2032 coin cells. IC Role / Device Role / Timing Role: Standby-retentive memory bank; enters automatic power-down when host MCU sleeps between 10-second measurement cycles. Use Value: VDR = 2.0 V allows data retention down to end-of-life battery voltage, eliminating need for external voltage supervisors or EEPROM wear leveling. |
| Legacy Avionics Display Controller | Automotive Body Control Module |
Use Scenario: Serves as frame buffer for monochrome LCD displays in certified flight deck instruments with DO-254 compliance requirements. IC Role / Device Role / Timing Role: Byte-accessible video RAM mapped into 80C88 CPU address space; accessed via dedicated DMA channel with fixed 70 ns cycle alignment. Use Value: TSOP I package meets vibration resistance specs (MIL-STD-810G), and tHZOE ≤25 ns prevents pixel corruption during rapid display refresh transitions. | Use Scenario: Stores door lock actuator fault codes and window position learning values in BCMs operating across engine bay thermal zones. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM backed by supercapacitor; retains data during ignition-off periods up to 30 days. Use Value: Automotive-E grade variant (–40 °C to +125 °C) supports junction temperature survival during under-hood thermal soak, with ISB2 ≤15 µA enabling >1000-hour retention at 125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C4008-70SCN | Same 32K × 8 organization and 70 ns speed, but 2.7–3.6 V supply range; lower standby current (3 µA typical) | Requires level-shifting for 5 V systems; unsuitable for direct replacement without voltage rail redesign | Select only if migrating to 3.3 V architecture and board layout permits new decoupling and routing |
| IS62WV2568BLL-70NLI | 32K × 8, 70 ns, 2.7–3.6 V; built-in auto-refresh disable and deeper sleep mode (0.5 µA) | Not pin-compatible; uses different pinout (A0–A14 not contiguous) and lacks CE-controlled power-down | Choose for ultra-low-power 3.3 V designs where firmware can manage sleep entry/exit externally |
Compared with AS6C4008-70SCN and IS62WV2568BLL-70NLI, CY62256NLL-70ZRXIT uniquely delivers 5 V tolerance, CE-driven automatic power-down, and TSOP I pinout - making it the only drop-in solution for legacy 5 V industrial systems requiring minimal BOM change and proven thermal reliability.
Availability
CY62256NLL-70ZRXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, legacy avionics displays, and automotive body control modules requiring stable component supply across extended product lifecycles.
Supply support for CY62256NLL-70ZRXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions - formed through the acquisition of Cypress Semiconductor in 2020.
CY62256N belongs to Infineon's legacy SRAM portfolio, designed specifically for industrial and automotive applications demanding long-lifecycle support, extended temperature operation, and backward compatibility with 5 V microcontroller buses.
FAQ
Is CY62256NLL-70ZRXIT pin-compatible with CY62256NLL-55?
Yes - both share identical 28-pin TSOP I pinout, address/data/control signal mapping, and electrical interface. The only difference is access time: 55 ns vs. 70 ns. Systems designed for the slower variant will operate reliably with the 55 ns part, but timing-critical designs may require validation of setup/hold margins when substituting upward.
Does this SRAM require an external clock or refresh circuitry?
No - CY62256NLL-70ZRXIT is a fully static RAM with no refresh requirement. It retains data indefinitely as long as VCC remains within specification and CE is held HIGH during standby. No clock signal, timer, or external refresh controller is needed - simplifying design and reducing BOM count.
What is the maximum data retention voltage (VDR) and how is it used?
VDR is specified at 2.0 V minimum. When VCC drops to ≥2.0 V and CE is HIGH, the device enters data retention mode with ISB2 ≤10 µA (industrial grade). This enables use with backup batteries or supercapacitors that decay slowly - data remains valid for years without active power, provided ambient temperature stays within rated range.
Can I/O pins be safely driven while CE is HIGH?
No - driving I/O pins while CE is HIGH violates the absolute maximum rating for output current and risks latch-up. The I/Os enter high-impedance state only when CE is LOW and OE is LOW (read) or CE is LOW and WE is LOW (write). During CE HIGH, all I/Os must be left floating or actively driven only by external pull-ups/downs within VIH/VIL limits.
CY62256NLL-70ZRXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
CY62256NLL-70ZRXIT FAQ
1.How can I place an order for CY62256NLL-70ZRXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256NLL-70ZRXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256NLL-70ZRXIT reliable?
The price and inventory of CY62256NLL-70ZRXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256NLL-70ZRXIT is usually 5 days.
3.What payment methods are accepted for CY62256NLL-70ZRXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256NLL-70ZRXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256NLL-70ZRXIT?
CY62256NLL-70ZRXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256NLL-70ZRXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256NLL-70ZRXIT?
For technical support, including CY62256NLL-70ZRXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256NLL-70ZRXIT requirements.
6.How does Aetrix verify that CY62256NLL-70ZRXIT is sourced from the original manufacturer or authorized distributors?
All CY62256NLL-70ZRXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256NLL-70ZRXIT meets industry standards.
7.What is the process for return or replacement of CY62256NLL-70ZRXIT?
All CY62256NLL-70ZRXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62256NLL-70ZRXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256NLL-70ZRXIT part is unused and in its original packaging.
Return procedure for CY62256NLL-70ZRXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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