Infineon Technologies CY62256VNLL-70SNXC

Overview

CY62256VNLL-70SNXC from Cypress Semiconductor is a 256 Kbit (32K × 8) low-voltage CMOS static RAM with 70 ns access time, operating across 2.7–3.6 V and supporting commercial temperature range (0°C to +70°C). It features active-low CE/OE/WE controls, tristate I/Os, automatic power-down (<5 µA standby), and TTL-compatible signaling - deployed in embedded controllers, industrial HMIs, and legacy microprocessor systems requiring nonvolatile SRAM backup.

For engineers reviewing the CY62256VNLL-70SNXC datasheet, CY62256VNLL-70SNXC pinout, CY62256VNLL-70SNXC application, or CY62256VNLL-70SNXC equivalent, key selection criteria include 28-pin narrow SOIC package compatibility, 70 ns read/write timing compliance, low-voltage 2.7–3.6 V operation, and automatic CE-controlled power-down behavior for battery-backed memory subsystems.

Technical Context

The CY62256VNLL-70SNXC implements a fully static 32K × 8 memory array with asynchronous parallel interface logic. Its address decoding uses 15-bit addressing (A0–A14), and data I/O lines (I/O0–I/O7) operate bidirectionally under control of CE, OE, and WE signals - all active-low with defined setup/hold and propagation delays.

Power management relies on CE-driven automatic power-down mode, reducing ICC to ≤5 µA (typical) when CE is HIGH. The device supports three distinct operational states: write (CE & WE LOW), read (CE & OE LOW, WE HIGH), and high-impedance standby (CE HIGH or OE HIGH), with guaranteed tHZOE ≤25 ns and tHZCE ≤25 ns for fast bus release.

Key Specifications

Pinout & Package

Package: 28-pin narrow SOIC (300-mil), RoHS-compliant, body width 7.62 mm, lead pitch 1.27 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV2568BLL-70NLI and MCM62C256B-70, the CY62256VNLL-70SNXC offers lower standby current (5 µA vs. 15 µA/-) and guaranteed commercial-temp qualification - making it optimal for cost-sensitive, battery-constrained, and thermally benign embedded systems.

Availability

CY62256VNLL-70SNXC is available at Aetrix Electronics and suitable for industrial HMI systems, legacy microcontroller upgrades, and portable test equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant narrow SOIC packaging.

Supply support for CY62256VNLL-70SNXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and embedded markets.

The CY62256VN series targets cost-effective, low-power parallel SRAM replacement in legacy and upgrade designs - emphasizing pin compatibility, wide voltage operation, and minimal external support circuitry.

FAQ

Is CY62256VNLL-70SNXC compatible with 5 V logic systems?

No - it is strictly a 2.7–3.6 V device. Inputs tolerate up to VCC + 0.3 V (max 3.9 V), and VIH minimum is 2.2 V. Direct interfacing with 5 V microcontrollers requires level-shifting or 5 V-tolerant I/O buffers; it is not 5 V input-tolerant by default.

Does this SRAM retain data when VCC drops below 2.7 V?

Yes - data retention is guaranteed down to VDR = 1.4 V, provided CE remains HIGH and VIN stays within safe limits. At 1.4 V, ISB2 remains ≤5 µA (typ), enabling multi-year retention with coin-cell backup, though full functionality resumes only above 2.7 V.

What is the maximum clock frequency supported for read/write cycles?

The device has no internal clock - it is asynchronous. Maximum effective throughput is determined by tRC = 70 ns, yielding up to ~14.3 MHz sustained random access. Burst or sequential access may achieve higher average bandwidth depending on address transition timing and bus protocol.

Can CE and OE both be tied LOW permanently for simplified interface?

Yes - tying CE and OE LOW enables continuous read mode (with WE HIGH) or write mode (with WE LOW), eliminating external control logic. However, this disables automatic power-down and increases ICC to 11–30 mA; use only in mains-powered systems with adequate thermal design.