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Infineon Technologies CY62256VNLL-70SNXCT
- Part No.:
- CY62256VNLL-70SNXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY62256VNLL-70SNXCT.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,010
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Product details
Overview
CY62256VNLL-70SNXCT from Cypress Semiconductor is a 256K-bit (32K × 8) CMOS static RAM with 70 ns access time, operating across 2.7V–3.6V supply range and supporting commercial (0°C to 70°C) temperature grade. It features active-low CE/OE/WE controls, tristate I/Os, automatic power-down (<5 µA standby), and TTL-compatible signaling - deployed in embedded controllers, industrial PLCs, and legacy instrumentation requiring non-volatile SRAM buffering.
For engineers reviewing the CY62256VNLL-70SNXCT datasheet, CY62256VNLL-70SNXCT pinout, CY62256VNLL-70SNXCT application, or CY62256VNLL-70SNXCT equivalent, key selection criteria include 70 ns read cycle timing, 28-pin narrow SOIC package compatibility, low-voltage operation down to 2.7 V, and automatic CE-controlled power-down behavior for energy-constrained systems.
Technical Context
The CY62256VNLL-70SNXCT implements a fully static 32K × 8 memory array with asynchronous parallel interface logic. Its dual-active-low control scheme (CE and OE) enables seamless memory expansion without external gating, while WE polarity and timing (tPWE = 50 ns min) define write initiation and termination boundaries independent of address stability windows.
Power management relies on CMOS-level CE threshold detection: when CE rises above VCC – 0.3 V under CMOS input conditions, ISB2 drops to ≤5 µA (commercial grade), achieving >99% power reduction versus active mode. All I/O pins default to high-impedance unless CE and OE are both asserted LOW and WE is HIGH during read operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8 bits - supports byte-wide data bus interfacing without bit-slicing logic |
| Access Time (tAA) | 70 ns max - defines minimum clock-to-data latency in synchronous controller interfaces |
| VCC Range | 2.7 V to 3.6 V - compatible with 3.3 V LVTTL and mixed-voltage system rails |
| Standby Current (ISB2) | 0.1 µA typ / 5 µA max (Commercial) - enables battery-backed retention in low-power modes |
| Operating Temperature | 0°C to +70°C - validated for commercial-grade industrial control panels and test equipment |
| Package | 28-pin narrow SOIC (300-mil) - surface-mount compatible with standard reflow profiles and IPC-7351B land patterns |
| Output Drive | IOL = 2.1 mA / IOH = −1.0 mA at VCC = 2.7 V - meets TTL loading requirements without pull-up resistors |
Pinout & Package
Package: 28-pin narrow SOIC (300-mil), RoHS-compliant, body width 7.6 mm, lead pitch 1.27 mm.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Input | 15-bit address bus accepting 0x0000–0x7FFF; no internal latching - requires stable setup before CE assertion |
| I/O0–I/O7 | Bidirectional Data Bus | Tristate-enabled data path; direction controlled by OE/WE states - no separate DQ/DQ̅ lines |
| CE | Chip Enable (active LOW) | Primary device select; triggers automatic power-down when deasserted - critical for multi-SRAM bank isolation |
| OE | Output Enable (active LOW) | Enables output drivers only when CE is also LOW; disables outputs to high-Z during writes or deselect |
| WE | Write Enable (active LOW) | Controls R/W direction: LOW = write (data latched on rising edge of WE or CE), HIGH = read |
| VCC | Power Supply | 2.7–3.6 V core supply; decoupling capacitor required within 10 mm of Pin 28 per layout guidelines |
| GND | Ground Reference | Single ground plane connection point; must be tied to system common ground with low-inductance path |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to ≤5 µA when CE is HIGH - eliminates need for external power-gating circuitry |
| TTL-Compatible I/O Levels | VIH = 2.2 V min / VIL = 0.8 V max at VCC = 2.7 V - interoperable with legacy 5 V microcontrollers via level-shifting resistors |
| 70 ns Read Cycle (tRC) | Guaranteed tAA = 70 ns across full voltage/temperature range - supports 14.3 MHz burst reads in FPGA-based controllers |
| Low-Voltage Operation | Functional down to 2.7 V with full timing compliance - extends battery life in portable diagnostic tools |
| Easy Memory Expansion | Dedicated CE/OE/WE enables daisy-chained or decoded multi-chip configurations without glue logic |
Applications
| Industrial HMI Panels | Legacy Test Equipment Buffers |
|---|---|
Use Scenario: Real-time display refresh and command queue storage in panel-mounted HMIs with ARM9-based controllers. IC Role / Device Role / Timing Role: Byte-accessible SRAM buffer holding GUI frame buffers and user input logs between MCU and LCD controller. Use Value: 70 ns tAA ensures sub-100 ns pixel update latency; 2.7–3.6 V range matches 3.3 V system rail without regulators. |
Use Scenario: Temporary waveform capture and calibration data staging in benchtop oscilloscopes and signal generators. IC Role / Device Role / Timing Role: High-speed acquisition buffer interfaced directly to FPGA DMA engines for real-time data streaming. Use Value: Tristate I/Os prevent bus contention during concurrent ADC sampling and display updates; CE-driven power-down cuts idle current by >99%. |
| Automotive Diagnostic Tools | Medical Device Data Loggers |
Use Scenario: OBD-II protocol translation and fault code caching in handheld vehicle scanners operating in 0°C–70°C ambient. IC Role / Device Role / Timing Role: Non-volatile SRAM retaining session data during ignition cycling, backed by supercapacitor. Use Value: ISB2 ≤5 µA enables >72-hour data retention on 0.1 F supercap; 28-pin SOIC simplifies automated assembly. |
Use Scenario: ECG waveform pre-processing and alarm-trigger history storage in portable patient monitors. IC Role / Device Role / Timing Role: Dual-port accessible memory storing timestamped analog samples prior to SPI transmission to host MCU. Use Value: OE/WE-controlled read/write isolation prevents data corruption during interrupt-driven telemetry bursts; TTL compatibility eases integration with legacy ASICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62C256AL-70QLI | Same 32K × 8 organization, 70 ns speed, but uses 2.7–5.5 V supply and has higher ISB (10 µA typ) | Broader voltage range suits mixed 5 V/3.3 V systems; less suitable for ultra-low-power battery backup | Select when interfacing with 5 V legacy peripherals; verify VIL/VIH margins at 3.3 V operation |
| ON Semiconductor MC68HC11F1CP | Not a drop-in replacement - integrated MCU with 256-byte on-chip RAM; lacks external parallel bus interface | Replaces discrete SRAM only in deeply embedded control loops where software-managed memory suffices | Choose only for cost-sensitive, low-complexity designs where external memory expansion is unnecessary |
Compared with IS62C256AL-70QLI, CY62256VNLL-70SNXCT offers lower standby current and tighter 2.7–3.6 V regulation, making it preferable for battery-backed applications; versus MC68HC11F1CP, it provides full external parallel access essential for high-bandwidth data buffering.
Availability
CY62256VNLL-70SNXCT is available at Aetrix Electronics and suitable for industrial HMI panels, legacy test equipment buffers, and automotive diagnostic tools requiring stable component supply across extended product lifecycles.
Supply support for CY62256VNLL-70SNXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY62256VN series targets cost-sensitive, low-power embedded systems needing reliable parallel SRAM with minimal external support components - emphasizing ease of integration and long-term manufacturability.
FAQ
What is the maximum clock frequency supported for burst read operations using CY62256VNLL-70SNXCT?
The device does not use a clock; it is an asynchronous SRAM. Maximum effective throughput is determined by tRC = 70 ns, yielding up to 14.3 million 8-bit words per second in continuous read cycles. Address setup/hold and CE/OE timing must be met independently of any system clock.
Can CY62256VNLL-70SNXCT operate reliably at 2.5 V?
No - the absolute minimum VCC is 2.7 V per datasheet specifications. Operation below 2.7 V risks timing violations, increased bit-error rates, and failure to enter automatic power-down mode. Systems requiring 2.5 V operation should consider alternative SRAMs rated for that range.
Does this part support battery backup for data retention?
Yes - with VCC reduced to 1.4 V (VDR), data retention current is ≤3 µA (commercial grade), enabling multi-day retention on typical supercapacitors. External backup switching circuitry must isolate main VCC and apply retention voltage to Pin 28 during power loss.
Is the 28-pin narrow SOIC package compatible with standard reflow soldering profiles?
Yes - the CY62256VNLL-70SNXCT in narrow SOIC adheres to JEDEC MS-012 standards and supports IPC/JEDEC J-STD-020D moisture sensitivity level 1. Peak reflow temperature of 260°C for ≤10 seconds is permitted; recommended profile follows SnPb or Pb-free ramp-soak-reflow guidelines.
CY62256VNLL-70SNXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
CY62256VNLL-70SNXCT FAQ
1.How can I place an order for CY62256VNLL-70SNXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256VNLL-70SNXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256VNLL-70SNXCT reliable?
The price and inventory of CY62256VNLL-70SNXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256VNLL-70SNXCT is usually 5 days.
3.What payment methods are accepted for CY62256VNLL-70SNXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256VNLL-70SNXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256VNLL-70SNXCT?
CY62256VNLL-70SNXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256VNLL-70SNXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256VNLL-70SNXCT?
For technical support, including CY62256VNLL-70SNXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256VNLL-70SNXCT requirements.
6.How does Aetrix verify that CY62256VNLL-70SNXCT is sourced from the original manufacturer or authorized distributors?
All CY62256VNLL-70SNXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256VNLL-70SNXCT meets industry standards.
7.What is the process for return or replacement of CY62256VNLL-70SNXCT?
All CY62256VNLL-70SNXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY62256VNLL-70SNXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256VNLL-70SNXCT part is unused and in its original packaging.
Return procedure for CY62256VNLL-70SNXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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