Infineon Technologies CY62256VNLL-70SNXE
- Part No.:
- CY62256VNLL-70SNXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY62256VNLL-70SNXE.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:1,818
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Product details
Overview
CY62256VNLL-70SNXE from Cypress Semiconductor is a 256 Kbit (32K × 8) low-voltage CMOS static RAM with 70 ns access time, operating across 2.7V–3.6V supply and supporting commercial (0°C to 70°C) temperature range. It features active-low CE/OE/WE controls, tristate I/Os, automatic power-down (<5 µA standby), and TTL-compatible signaling - deployed in embedded controllers, industrial PLCs, and legacy instrumentation requiring nonvolatile SRAM backup.
For engineers reviewing the CY62256VNLL-70SNXE datasheet, CY62256VNLL-70SNXE pinout, CY62256VNLL-70SNXE application, or CY62256VNLL-70SNXE equivalent, key selection criteria include 70 ns read cycle time, 28-pin narrow SOIC package compatibility, CE-controlled power-down behavior, and 32K × 8 memory organization for byte-wide microcontroller interfacing.
Technical Context
This SRAM implements a synchronous, address-decoded 32K × 8 array with independent row/column decoding, sense amplifiers, and input buffers. Its control logic uses CE as primary chip select, OE to enable output drivers, and WE to gate write operations - all active-low with defined setup/hold timing relative to address and data transitions.
Power management relies on automatic CE-driven power-down mode, reducing ICC to ≤5 µA when CE is high and inputs are at valid logic levels. The device maintains data retention down to VCC = 1.4 V, with tCDR = 0 ns and ICCDR ≤3 µA under retention conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 Kbit (32,768 × 8 bits) - supports full byte-wide addressing without external multiplexing |
| Access Time | 70 ns max - ensures compatibility with 14 MHz bus timing in microcontroller systems |
| VCC Range | 2.7 V to 3.6 V - enables direct interface with 3.3 V logic families and battery-backed operation |
| Standby Current (ISB2) | 0.1 µA typ / 5 µA max - enables ultra-low-power hold mode during system sleep states |
| Operating Temperature | 0°C to +70°C - qualified for commercial-grade embedded applications with no derating required |
| Package | 28-pin narrow SOIC (300-mil) - surface-mount compatible with standard PCB assembly processes |
| Data Retention Voltage | 1.4 V min - allows retention during brown-out or backup-battery operation below nominal VCC |
Pinout & Package
Package: 28-pin narrow SOIC (300-mil), JEDEC MS-012AC compliant, lead-free (Pb-free) variant.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Input | 15-bit address bus (0–32,767) - fully decoded to select one of 32K locations |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristate I/O lines - driven during read (OE/CE low), latched during write (CE/WE low) |
| CE | Chip Enable | Active-low global select - disables outputs and triggers automatic power-down when high |
| OE | Output Enable | Active-low output gate - controls directionality; high = high-Z input mode, low = output drive |
| WE | Write Enable | Active-low write strobe - initiates write when CE also low; high = read or high-Z state |
| VCC | Power Supply | +2.7 V to +3.6 V supply - powers core logic and I/O buffers; decoupling required per layout guidelines |
| GND | Ground Reference | Signal and power return path - must be connected to system ground plane with low-inductance routing |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Down | Reduces ICC to ≤5 µA when CE is deasserted - eliminates need for external power gating in sleep modes |
| TTL-Compatible I/O | VIH = 2.2 V min, VOL = 0.4 V max at 2.7 V - ensures interoperability with legacy 5 V-tolerant microcontrollers |
| Easy Memory Expansion | Dedicated CE/OE/WE pins enable daisy-chained or parallel bank configurations without glue logic |
| Low-Voltage Operation | Functional down to 2.7 V - supports single-supply 3.3 V systems and battery-backed retention |
| CMOS Process | Optimizes speed/power trade-off - achieves 70 ns access with <30 mA active current at 3.6 V |
Applications
| Industrial HMI Panels | Medical Diagnostic Equipment |
|---|---|
|
Use Scenario: Real-time parameter buffering and configuration storage in touch-based operator interfaces with ARM Cortex-M4 controllers. IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory for UI state variables and calibration tables, accessed via 8-bit parallel bus at ≤14 MHz. Use Value: 70 ns access time meets worst-case interrupt latency requirements; 5 µA standby current extends battery life during panel idle periods. |
Use Scenario: Temporary waveform capture and processing buffer in portable ultrasound front-ends using FPGA-based acquisition engines. IC Role / Device Role / Timing Role: High-speed data staging memory between ADC interface and DSP pipeline, synchronized to CE/OE control signals. Use Value: Tristate I/Os prevent bus contention during DMA transfers; 2.7–3.6 V range matches FPGA I/O bank voltage. |
| Legacy Industrial PLC Modules | Avionics Data Loggers |
|
Use Scenario: Program memory expansion and I/O mapping table storage in DIN-rail mounted programmable logic controllers with Z80 or 8051 derivatives. IC Role / Device Role / Timing Role: Parallel-addressed SRAM replacing older 27C256 EPROMs in field-upgradable firmware execution paths. Use Value: Pin-compatible replacement for 28-pin DIP/SOIC footprints; CE-controlled power-down reduces module thermal load during scan idle. |
Use Scenario: Nonvolatile event buffer in DO-160-compliant flight data recorders where power interruption may occur mid-write. IC Role / Device Role / Timing Role: Fast-access temporary store for sensor telemetry before EEPROM commit, leveraging 1.4 V data retention capability. Use Value: Guaranteed data retention at 1.4 V allows seamless handoff to backup power; 0 ns tCDR enables immediate retention entry on VCC drop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV2568BLL-70NLI | Same 32K × 8 organization, 70 ns speed, but rated –40°C to +85°C industrial grade; ISB2 = 10 µA max | Required for extended temperature environments where CY62256VNLL-70SNXE's 0°C–70°C range is insufficient | Select when ambient operating temperature exceeds 70°C or long-term reliability at temperature extremes is mandated |
| ON Semiconductor MC68HC11F1M12 | Not a direct SRAM - integrated MCU with 512 B on-chip RAM; lacks external parallel bus interface and 256 Kbit capacity | Only viable if system architecture permits migration from external SRAM to on-chip memory with software rewrite | Not a drop-in replacement; consider only during full platform redesign with resource-constrained firmware |
Compared with IS62WV2568BLL-70NLI, CY62256VNLL-70SNXE offers lower standby current (5 µA vs. 10 µA) and commercial-grade cost optimization, while the MC68HC11F1M12 represents a functional shift away from discrete memory toward integrated control - limiting interchangeability to architectural overhauls.
Availability
CY62256VNLL-70SNXE is available at Aetrix Electronics and suitable for industrial HMI panels, medical diagnostic equipment, and legacy PLC modules requiring stable component supply, long-lifecycle support, and Pb-free compliance.
Supply support for CY62256VNLL-70SNXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and mixed-signal ICs for industrial, automotive, and computing applications, with emphasis on low-power, robust timing, and long-term manufacturability.
CY62256VN belongs to Cypress's legacy parallel SRAM product line, engineered specifically for drop-in replacement of aging NMOS and bipolar SRAMs in 8-bit and 16-bit microcontroller systems requiring pin-and-function compatibility.
FAQ
Is CY62256VNLL-70SNXE compatible with 5 V logic systems?
No - it operates strictly within 2.7 V to 3.6 V and is not 5 V tolerant. Inputs exceed VCC + 0.3 V risk damage; interfacing with 5 V microcontrollers requires level-shifting circuitry or I/O buffers rated for 3.3 V operation.
What happens to data when VCC drops below 2.7 V but remains above 1.4 V?
Data is retained as long as VCC stays ≥1.4 V and CE is held high. The device enters data retention mode with ICCDR ≤3 µA (commercial grade), preserving contents without external refresh - confirmed per datasheet page 4, "Data Retention Characteristics".
Can OE and WE both be asserted LOW simultaneously during a read operation?
Yes - OE LOW enables outputs, while WE HIGH (not LOW) is required for read. Asserting WE LOW while OE is LOW initiates a write, not a read. Correct read timing requires CE and OE LOW, WE HIGH, with address stable before CE activation.
Does the 28-pin narrow SOIC package support reflow soldering per J-STD-020?
Yes - the Pb-free variant (denoted by 'N' suffix in SNXE) complies with JEDEC J-STD-020D moisture sensitivity level 3 and peak reflow temperature of 260°C, as verified in Cypress's packaging documentation for CY62256VN family.
CY62256VNLL-70SNXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
CY62256VNLL-70SNXE FAQ
1.How can I place an order for CY62256VNLL-70SNXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256VNLL-70SNXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256VNLL-70SNXE reliable?
The price and inventory of CY62256VNLL-70SNXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256VNLL-70SNXE is usually 5 days.
3.What payment methods are accepted for CY62256VNLL-70SNXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256VNLL-70SNXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256VNLL-70SNXE?
CY62256VNLL-70SNXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256VNLL-70SNXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256VNLL-70SNXE?
For technical support, including CY62256VNLL-70SNXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256VNLL-70SNXE requirements.
6.How does Aetrix verify that CY62256VNLL-70SNXE is sourced from the original manufacturer or authorized distributors?
All CY62256VNLL-70SNXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256VNLL-70SNXE meets industry standards.
7.What is the process for return or replacement of CY62256VNLL-70SNXE?
All CY62256VNLL-70SNXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62256VNLL-70SNXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256VNLL-70SNXE part is unused and in its original packaging.
Return procedure for CY62256VNLL-70SNXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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