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Infineon Technologies CY62256VNLL-70SNXET
- Part No.:
- CY62256VNLL-70SNXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
CY62256VNLL-70SNXET.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,308
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Product details
Overview
CY62256VNLL-70SNXET from Cypress Semiconductor is a 256 Kbit (32K × 8) low-voltage CMOS static RAM with 70 ns access time, operating across 2.7–3.6 V supply and supporting commercial temperature range (0°C to +70°C). It features active-low CE/OE/WE controls, tristate I/Os, automatic power-down (<5 µA standby), and TTL-compatible signaling - deployed in embedded controllers, industrial PLCs, and legacy instrumentation requiring nonvolatile SRAM retention during brownout.
For engineers reviewing the CY62256VNLL-70SNXET datasheet, CY62256VNLL-70SNXET pinout, CY62256VNLL-70SNXET application, or CY62256VNLL-70SNXET equivalent, this page delivers verified package mapping (28-pin narrow SOIC), validated timing parameters (tAA = 70 ns, tHZOE = 25 ns), real-world power behavior (ISB2 = 0.1–5 µA), and functional alternatives for memory expansion designs.
Technical Context
The CY62256VNLL-70SNXET implements a fully static 32K × 8 memory array with asynchronous read/write control via independent CE, OE, and WE signals. Its architecture supports seamless memory expansion through chip enable chaining and output enable gating, eliminating external bus arbitration logic.
It uses CMOS process technology to achieve sub-5 µA standby current at 3.6 V while maintaining 70 ns access under worst-case commercial conditions. The device enters automatic power-down mode when CE is HIGH, reducing ICC by >99% without requiring external control sequencing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 Kbit (32,768 × 8 bits); supports byte-wide data buses without address multiplexing |
| Access Time (tAA) | 70 ns max; guarantees full read data validity within 70 ns after stable address and CE/OE assertion |
| VCC Range | 2.7 V to 3.6 V; compatible with 3.3 V systems and tolerant of ±0.3 V supply ripple |
| Standby Current (ISB2) | 0.1 µA typical / 5 µA max at 3.6 V; enables battery-backed operation for >1 year on coin cell |
| Operating Current (ICC) | 11 mA typical / 30 mA max at 3.6 V; supports sustained 14 MHz random access without thermal throttling |
| Input/Output Voltage Levels | VIH = 2.2 V min, VOL = 0.4 V max at 2.1 mA; ensures robust noise margin against 3.3 V logic families |
| Pin Count & Type | 28-pin SOIC with 15 address (A0–A14), 8 bidirectional I/O (I/O0–I/O7), and 5 control (CE, OE, WE, VCC, GND) |
Pinout & Package
Package: 28-pin narrow-body SOIC (300-mil width), RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Input | 15-bit unidirectional address bus; selects one of 32,768 memory locations |
| I/O0–I/O7 | Bidirectional Data Bus | Tristate-capable lines shared for read data output and write data input; high-impedance when OE or CE inactive |
| CE | Chip Enable (active LOW) | Primary selection signal; disables all outputs and triggers automatic power-down when HIGH |
| OE | Output Enable (active LOW) | Controls I/O direction: LOW enables read data output; HIGH places I/Os in high-Z input state |
| WE | Write Enable (active LOW) | Controls data flow direction during CE-active window: LOW initiates write, HIGH enables read |
| VCC | Power Supply | Single 2.7–3.6 V supply; powers core logic and I/O buffers; no separate I/O voltage required |
| GND | Ground Reference | Common return path for all internal circuits and I/O signals; requires low-impedance PCB connection |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Down Mode | Reduces ICC to ≤5 µA when CE is deasserted, eliminating need for external sleep controllers in portable systems |
| TTL-Compatible I/O | Accepts 0.8 V/2.0 V logic thresholds and drives 0.4 V/2.4 V levels at 2.1 mA, enabling direct interface with 3.3 V microcontrollers |
| Easy Memory Expansion | CE and OE pins support daisy-chained multi-chip configurations without glue logic or address decoding overhead |
| Low-Voltage Operation | Functional down to 2.7 V VCC, allowing use in battery-powered systems with aging Li-ion cells (3.0 V nominal) |
| CMOS Process Optimization | Combines 70 ns speed with <30 mA active current, achieving 2.3 ns·mA energy-delay product for efficient burst access |
Applications
| Industrial PLC Data Buffer | Medical Device Parameter Storage |
|---|---|
|
Use Scenario: Stores real-time sensor calibration coefficients and runtime configuration in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Byte-accessible SRAM buffer interfaced directly to ARM Cortex-M4 bus with no wait states at 70 ns access. Use Value: Enables deterministic 70 ns register reads during motion control loops, avoiding jitter from flash latency or DRAM refresh cycles. |
Use Scenario: Holds patient-specific therapy parameters and alarm thresholds in portable infusion pumps with battery backup. IC Role / Device Role / Timing Role: Low-power SRAM retaining data during AC power loss, powered by coin cell via VDR ≥1.4 V specification. Use Value: Guarantees >1-year data retention on CR2032 (220 mAh) due to ISB2 ≤5 µA, meeting IEC 62304 Class B requirements. |
| Legacy Test Equipment Firmware Cache | Avionics Display Controller Frame Buffer |
|
Use Scenario: Caches FPGA configuration bitstreams and instrument firmware patches in automated test systems with long service life. IC Role / Device Role / Timing Role: Static RAM used as nonvolatile cache between NOR flash and processor, accessed via parallel bus at 14 MHz. Use Value: Eliminates flash wear-out concerns and supports field updates without hardware redesign, leveraging 100% write endurance. |
Use Scenario: Provides dual-port frame storage for monochrome cockpit displays in certified airborne electronics. IC Role / Device Role / Timing Role: Asynchronous SRAM serving as pixel buffer for discrete graphics controller with independent read/write timing. Use Value: Delivers glitch-free display updates using tHZOE = 25 ns and tLZOE = 5 ns to synchronize with video sync signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62C256AL-70QLI | Same 32K × 8 organization, 70 ns speed, but rated –40°C to +85°C industrial grade; ISB2 = 1 µA typical | Supports wider ambient range; higher standby current makes it less suitable for battery-critical medical devices | Select for industrial environments where extended temperature tolerance outweighs µA-level power savings |
| Renesas R1LV256AS-70SI | Identical pinout and timing, but specifies VCC = 2.7–3.6 V and ISB2 = 0.5 µA max; JEDEC-standard SOIC footprint | Drop-in replacement with tighter standby spec; lacks automotive qualification markings present on CY62256VNLL | Choose when sourcing consistency and JEDEC compliance are prioritized over Cypress-specific reliability documentation |
Compared with IS62C256AL-70QLI and R1LV256AS-70SI, the CY62256VNLL-70SNXET offers the lowest guaranteed standby current (5 µA max) and explicit commercial-grade qualification - critical for cost-sensitive, thermally benign applications where ultra-low power defines system runtime.
Availability
CY62256VNLL-70SNXET is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and legacy test equipment firmware caching requiring stable component supply and long-term obsolescence management.
Supply support for CY62256VNLL-70SNXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.
The CY62256VN series targets cost-sensitive, low-power embedded systems needing reliable parallel SRAM with minimal board space - optimized for drop-in replacement of older 28-pin NMOS and CMOS SRAMs in legacy designs.
FAQ
Is CY62256VNLL-70SNXET pin-compatible with the original CY62256-70PC?
Yes. CY62256VNLL-70SNXET uses the same 28-pin narrow SOIC footprint and identical pin assignments (A0–A14, I/O0–I/O7, CE, OE, WE, VCC, GND) as CY62256-70PC. The VN suffix denotes low-voltage operation (2.7–3.6 V), while the PC version requires 4.5–5.5 V - so voltage domain compatibility must be verified before substitution.
What is the minimum VCC required to retain data during power loss?
Data retention is guaranteed down to VDR = 1.4 V per the datasheet. At this voltage, ICCDR remains ≤3 µA (commercial grade), enabling retention on a 220 mAh CR2032 coin cell for over 12 months with proper decoupling and low-leakage PCB design.
Does CY62256VNLL-70SNXET support concurrent read/write operations?
No. It is a single-port asynchronous SRAM: only one operation (read or write) may occur per cycle. Read and write are controlled exclusively by CE, OE, and WE timing - overlapping CE/WE asserts initiate writes; CE/OE asserts with WE HIGH enable reads.
Can OE be left unconnected if outputs are always enabled?
No. OE must be actively driven LOW to enable outputs. Leaving OE floating violates the absolute maximum rating for input voltage (–0.5 V to VCC + 0.3 V) and risks undefined I/O states, potential bus contention, or increased standby current due to internal leakage paths.
CY62256VNLL-70SNXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
CY62256VNLL-70SNXET FAQ
1.How can I place an order for CY62256VNLL-70SNXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256VNLL-70SNXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256VNLL-70SNXET reliable?
The price and inventory of CY62256VNLL-70SNXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256VNLL-70SNXET is usually 5 days.
3.What payment methods are accepted for CY62256VNLL-70SNXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256VNLL-70SNXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256VNLL-70SNXET?
CY62256VNLL-70SNXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256VNLL-70SNXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256VNLL-70SNXET?
For technical support, including CY62256VNLL-70SNXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256VNLL-70SNXET requirements.
6.How does Aetrix verify that CY62256VNLL-70SNXET is sourced from the original manufacturer or authorized distributors?
All CY62256VNLL-70SNXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256VNLL-70SNXET meets industry standards.
7.What is the process for return or replacement of CY62256VNLL-70SNXET?
All CY62256VNLL-70SNXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62256VNLL-70SNXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256VNLL-70SNXET part is unused and in its original packaging.
Return procedure for CY62256VNLL-70SNXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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