My Inquiry
My Account
Infineon Technologies CY62256VNLL-70ZRXE
- Part No.:
- CY62256VNLL-70ZRXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY62256VNLL-70ZRXE.pdf
- Description:
- IC SRAM 256KBIT PAR 28TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,072
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62256VNLL-70ZRXE from Cypress Semiconductor is a 256K-bit (32K × 8) CMOS static RAM with 70 ns access time, operating across 2.7V–3.6V supply and supporting commercial (0°C to 70°C), industrial (–40°C to 85°C), and automotive-E (–40°C to 125°C) temperature grades. It features TTL-compatible I/O, automatic CE-controlled power-down (<5 μA standby for commercial grade), and tristate outputs enabled by OE/WE/CE logic - deployed in embedded controllers, industrial PLCs, and automotive infotainment memory buffers.
For engineers reviewing the CY62256VNLL-70ZRXE datasheet, CY62256VNLL-70ZRXE pinout, CY62256VNLL-70ZRXE application, or CY62256VNLL-70ZRXE equivalent, key selection criteria include 70 ns tAA timing, 28-pin narrow SOIC package compatibility, low-voltage 2.7V–3.6V operation, and dual-mode CE/OE-controlled read/write sequencing for legacy bus interfacing.
Technical Context
The CY62256VNLL-70ZRXE implements a fully static 32K × 8 memory array with asynchronous parallel interface, using CMOS technology to balance speed and power. Its control architecture relies on three active-low signals: CE (chip enable), OE (output enable), and WE (write enable), enabling precise cycle control without clocks or refresh circuitry.
It supports three distinct operational states: active read (CE=LOW, OE=LOW, WE=HIGH), active write (CE=LOW, WE=LOW), and automatic power-down (CE=HIGH), reducing ICC to ≤5 μA (commercial) or ≤130 μA (automotive-E). Address decoding covers A0–A14 (15-bit), and data I/O lines I/O0–I/O7 are bidirectional with tristate capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8 bits - supports byte-wide data buses without external multiplexing |
| Access Time (tAA) | 70 ns max - ensures compatibility with 14.3 MHz system clocks in legacy microcontroller interfaces |
| Supply Voltage Range | 2.7 V to 3.6 V - interoperable with 3.3 V LVTTL and mixed-voltage industrial backplanes |
| Standby Current (ISB2) | ≤5 μA (commercial), ≤130 μA (automotive-E) - enables battery-backed retention in safety-critical systems |
| Operating Temperature | –40°C to +125°C (automotive-E grade) - qualified for under-hood automotive ECUs |
| I/O Compatibility | TTL input thresholds and output drive (IOH = –1.0 mA, IOL = 2.1 mA) - direct drop-in replacement for older 5 V SRAMs with level-shifting |
| Data Retention Voltage | VDR ≥ 1.4 V - sustains memory state during brown-out conditions down to 1.4 V VCC |
Pinout & Package
Package: 28-pin narrow SOIC (300-mil), RoHS-compliant, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Input | 15-bit address bus accepting full 32K-word range; no internal latching - requires stable address during CE assertion |
| I/O0–I/O7 | Bidirectional Data Bus | Tristate-capable lines; function as inputs during write, outputs during read, high-Z when OE or CE inactive |
| CE | Chip Enable (active LOW) | Primary device select; drives automatic power-down when HIGH, disabling all internal circuitry except retention logic |
| OE | Output Enable (active LOW) | Controls I/O direction only when CE is active; HIGH forces tristate regardless of WE state |
| WE | Write Enable (active LOW) | Determines R/W mode: LOW enables write (data latched on rising edge of WE or CE), HIGH enables read |
| VCC | Power Supply | Single 2.7–3.6 V supply; decoupling capacitor required at pin 28 per layout guidelines |
| GND | Ground Reference | Pin 14 serves as primary ground return; must be connected before VCC during power-up |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to ≤5 μA (commercial) with no external control - eliminates need for sleep-state software overhead |
| 70 ns Access with No Wait States | Enables zero-wait-state operation with 8051, Z80, and ARM7-based microcontrollers running ≤14 MHz |
| Wide Temperature Grade Options | Single footprint supports commercial, industrial, and automotive-E variants - simplifies BOM consolidation across product tiers |
| CMOS + TTL Interface Compatibility | Accepts TTL-level inputs and drives TTL loads directly - avoids level translators in mixed-signal legacy designs |
| Data Retention at 1.4 V | Maintains stored data during deep brown-out or backup-battery operation - critical for automotive event logging |
Applications
| Industrial PLC Memory Buffer | Automotive Instrument Cluster Display Cache |
|---|---|
Use Scenario: Stores real-time sensor fusion results and UI frame buffers in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing non-refreshed, low-latency storage for cyclic data exchange between CPU and I/O modules. Use Value: 70 ns tAA and CE-driven power-down reduce CPU wait states and extend runtime during mains interruption via supercapacitor hold-up. |
Use Scenario: Caches rendered gauge graphics and vehicle status messages in digital instrument clusters requiring fast display updates. IC Role / Device Role / Timing Role: Standalone display memory buffer interfaced directly to MCU's parallel bus, synchronized via CE/OE strobes. Use Value: Automotive-E grade (–40°C to +125°C) and 1.4 V data retention ensure reliable operation during engine start-up and thermal cycling. |
| Legacy Medical Device Data Log | Avionics Panel Control State Storage |
Use Scenario: Captures time-stamped diagnostic events in portable ECG monitors where firmware upgrade cycles exceed hardware lifetime. IC Role / Device Role / Timing Role: Nonvolatile-adjacent volatile memory holding last 24 hours of waveform metadata prior to flash transfer. Use Value: Low 5 μA standby current (commercial grade) extends battery life in Class II devices without compromising data integrity. |
Use Scenario: Holds panel configuration, button state history, and fault flags in certified cockpit displays with strict DO-254 timing constraints. IC Role / Device Role / Timing Role: Deterministic-access SRAM used for control-plane state mirroring, isolated from main processor bus via dedicated address decode. Use Value: 28-pin SOIC footprint and 70 ns timing meet avionics PCB routing density and worst-case timing margin requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62C256AL-70QLI | Same 32K × 8 organization, 70 ns speed, but 2.7–5.5 V supply range and higher ISB2 (10 μA commercial) | Broader voltage support suits mixed 3.3 V/5 V systems; not automotive-qualified | Select if board already uses 5 V peripherals and requires single-supply flexibility |
| ON Semiconductor MC68HC11F1M20 | Integrated 256-byte on-chip RAM only - no external 256K option; requires external memory expansion logic | Not a drop-in replacement; necessitates redesign of address/data bus and control logic | Only viable for new designs targeting HC11 derivatives with tight cost constraints and no legacy timing requirements |
Compared with IS62C256AL-70QLI, CY62256VNLL-70ZRXE offers tighter automotive qualification and lower standby current; versus MC68HC11F1M20, it delivers full external memory capacity without MCU-specific bus timing dependencies or added glue logic.
Availability
CY62256VNLL-70ZRXE is available at Aetrix Electronics and suitable for industrial PLCs, automotive instrument clusters, and legacy medical data loggers requiring stable component supply across extended product lifecycles and temperature extremes.
Supply support for CY62256VNLL-70ZRXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.
The CY62256VN series was designed specifically for drop-in replacement of legacy 5 V SRAMs in space-constrained, low-power embedded systems requiring extended temperature operation and deterministic timing - particularly in automotive and industrial control.
FAQ
Is CY62256VNLL-70ZRXE pin-compatible with the original CY62256N-70PC?
Yes - CY62256VNLL-70ZRXE uses the identical 28-pin narrow SOIC footprint and pinout as CY62256N-70PC, including matching A0–A14, I/O0–I/O7, CE, OE, WE, VCC, and GND assignments. The 'VN' suffix denotes voltage-range and process enhancements, not physical layout changes.
Does this SRAM require an external clock or refresh signal?
No - CY62256VNLL-70ZRXE is a fully static RAM with no clock input or refresh requirement. Data retention is maintained indefinitely as long as VCC remains within specification and CE is held LOW during active use; CE HIGH triggers automatic low-power retention mode.
What is the maximum data rate supported in burst read mode?
This device does not support burst or sequential read modes. Each access is independent and asynchronous: address setup, CE/OE assertion, and data valid timing are governed by tAA (70 ns), tACE (70 ns), and tDOE (35 ns); sustained throughput is limited to ~14.3 million words per second under ideal conditions.
Can CY62256VNLL-70ZRXE operate reliably at 2.5 V?
No - the absolute minimum VCC is 2.7 V per datasheet specifications. Operation below 2.7 V violates the guaranteed operating range and may result in data corruption, increased access time variability, or failure to enter power-down mode; 2.5 V is outside specification and unsupported.
CY62256VNLL-70ZRXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
CY62256VNLL-70ZRXE FAQ
1.How can I place an order for CY62256VNLL-70ZRXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256VNLL-70ZRXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256VNLL-70ZRXE reliable?
The price and inventory of CY62256VNLL-70ZRXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256VNLL-70ZRXE is usually 5 days.
3.What payment methods are accepted for CY62256VNLL-70ZRXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256VNLL-70ZRXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256VNLL-70ZRXE?
CY62256VNLL-70ZRXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256VNLL-70ZRXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256VNLL-70ZRXE?
For technical support, including CY62256VNLL-70ZRXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256VNLL-70ZRXE requirements.
6.How does Aetrix verify that CY62256VNLL-70ZRXE is sourced from the original manufacturer or authorized distributors?
All CY62256VNLL-70ZRXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256VNLL-70ZRXE meets industry standards.
7.What is the process for return or replacement of CY62256VNLL-70ZRXE?
All CY62256VNLL-70ZRXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62256VNLL-70ZRXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256VNLL-70ZRXE part is unused and in its original packaging.
Return procedure for CY62256VNLL-70ZRXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62256VNLL-70ZRXE Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
