Infineon Technologies CY62256VNLL-70ZXAT

Overview

CY62256VNLL-70ZXAT from Cypress Semiconductor is a 256 Kbit (32K × 8) low-voltage CMOS static RAM with 70 ns access time, operating across 2.7V–3.6V supply, supporting commercial temperature range (0°C to 70°C), and housed in a Pb-free 28-pin narrow SOIC package. It features TTL-compatible I/O, automatic power-down when deselected (ISB2 ≤ 5 μA), and dual active-low control signals (CE, OE) for seamless memory expansion in embedded controllers and data acquisition systems.

For engineers reviewing the CY62256VNLL-70ZXAT datasheet, CY62256VNLL-70ZXAT pinout, CY62256VNLL-70ZXAT application, or CY62256VNLL-70ZXAT equivalent, key selection criteria include its 70 ns read cycle time, 32K × 8 organization, CE/OE/WE tri-state control architecture, low standby current under CMOS input conditions, and narrow SOIC package compatibility with legacy PCB layouts.

Technical Context

The CY62256VNLL-70ZXAT implements a fully static 32K × 8 SRAM array with asynchronous parallel interface, using separate active-low chip enable (CE), output enable (OE), and write enable (WE) to decouple selection, output gating, and write control. Its tristate I/O drivers support bidirectional data flow without external bus transceivers.

It employs CMOS logic with automatic power-down: when CE is HIGH, ICC drops to ≤5 μA (ISB2) while retaining data at VCC ≥ 1.4 V; address pins A0–A14 decode 32K locations, and all timing parameters-including tAA = 70 ns and tDOE = 35 ns-are guaranteed over 2.7V–3.6V and 0°C–70°C.

Key Specifications

Pinout & Package

Package: 28-pin narrow SOIC (300-mil), Pb-free, RoHS-compliant, body width 7.6 mm, lead pitch 1.27 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62C256AL-70QLI, CY62256VNLL-70ZXAT offers lower standby current (5 μA vs. 10 μA) and commercial-grade qualification optimized for cost-sensitive indoor applications; unlike MC68HC11E9CP, it preserves external memory architecture, avoiding firmware migration and layout rework.

Availability

CY62256VNLL-70ZXAT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive diagnostic tool caching requiring stable component supply across multi-year production cycles.

Supply support for CY62256VNLL-70ZXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and consumer applications.

The CY62256VN family was designed specifically for cost-effective, low-power parallel SRAM replacement in legacy 3.3 V embedded systems-emphasizing pin compatibility, extended data retention, and simplified power management without external circuitry.

FAQ

What is the minimum VCC required to retain data in CY62256VNLL-70ZXAT?

Data retention is guaranteed down to VCC = 1.4 V (VDR), with ICCDR ≤ 3 μA at 25°C. Below 1.4 V, data loss may occur; the device does not support true zero-VCC retention. This threshold enables use with backup batteries or supercapacitors sized to maintain ≥1.4 V during main power interruption.

Can CY62256VNLL-70ZXAT interface directly with a 5 V microcontroller?

No-its absolute maximum input voltage is VCC + 0.5 V, and VCC max is 3.6 V, so 5 V logic signals exceed VIH/VIL limits and risk damage. A level translator (e.g., TXB0108) or resistive divider is required to shift 5 V signals to ≤3.6 V before connecting to A0–A14, CE, OE, WE, or I/O lines.

Does CY62256VNLL-70ZXAT require an external clock signal?

No-it is an asynchronous static RAM with no clock input. All operations are controlled by edge- and level-sensitive control signals (CE, OE, WE) and address stability windows defined by tAA, tSD, and tHD. No timing generator or clock distribution network is needed.

What is the thermal resistance (θJA) of the narrow SOIC package?

The θJA for the 28-pin narrow SOIC package is 68.45°C/W under standard test conditions (still air, soldered on a 3 × 4.5 inch two-layer PCB). At 30 mA ICC and 3.6 V, junction temperature rise is ~74°C above ambient-requiring derating or airflow if ambient exceeds 50°C in enclosed enclosures.